Abstract: First, a plurality of organic EL elements are formed on a substrate. The electron injection electrode of an organic EL element has a stacked layer structure of a metal thin film and a metal oxide film. A sealing agent is provided on the upper portion and outer periphery of the plurality of organic EL elements on the substrate, so as to surround the entire perimeter of the plurality of organic EL elements. A sealing plate is bonded to the upper face side of the sealing agent with a color filter sandwiched therebetween. As the sealing agent, a resin adhesive is used from which a solution extracted in accordance with the SEMI standard G29-1296 after curing has a pH of not less than four nor more than ten. It is preferable that the resin adhesive has a light transmittance of 70% or more on average in the wavelength range of 450 nm to 800 nm, with the variation range of the light transmittance in the wavelength range of 450 nm to 800 nm being not more than ±10% for the average light transmittance.

Abstract: A plurality of organic EL devices are formed first on a substrate. Next, a film of a sealing agent is formed over the outer periphery of a lower surface (color filter side) of a sealing plate. Then, a sealing agent is dropped onto a central portion of the sealing plate. After that, the sealing plate and the substrate are laminated at a predetermined pressure in a vacuum chamber in a vacuum, and then the vacuum chamber is released from its vacuum state. The substrate and the sealing plate are removed from the vacuum chamber, and the sealing agents between the substrate and the sealing plate are cured by the curing methods suitable for the respective materials.

Abstract: An organic electroluminescent device comprising an organic layer including a light emitting layer, between a hole injection electrode and an electron injection electrode, wherein the electron injection electrode has a laminated structure of a metal thin film containing gold such as MgAu, and an auxiliary electrode composed of a transparent electrically conductive metal oxide thin film formed thereon.

Abstract: First, a plurality of organic EL elements are formed on a substrate. The electron injection electrode of an organic EL element has a stacked layer structure of a metal thin film and a metal oxide film. A sealing agent is provided on the upper portion and outer periphery of the plurality of organic EL elements on the substrate, so as to surround the entire perimeter of the plurality of organic EL elements. A sealing plate is bonded to the upper face side of the sealing agent with a color filter sandwiched therebetween. As the sealing agent, a resin adhesive is used from which a solution extracted in accordance with the SEMI standard G29-1296 after curing has a pH of not less than four nor more than ten. It is preferable that the resin adhesive has a light transmittance of 70% or more on average in the wavelength range of 450 nm to 800 nm, with the variation range of the light transmittance in the wavelength range of 450 nm to 800 nm being not more than ±10% for the average light transmittance.

Abstract: A process for manufacturing a high quality organic EL panel is provided. On a glass substrate is formed an organic EL element, on which is then deposited a protective film. The surface of the device substrate or the sealing substrate is treated with ozone or plasma, and then an adhesive is applied on the surface by screen printing. After placing the device substrate and the sealing substrate in a chamber in a vacuuming apparatus, the inside of the chamber is vacuumed to a pressure of P1. After leaving the substrates for a given period until foaming of volatiles contained in the adhesive ceases, a pressure in the chamber is increased to P2 for preventing foaming of the volatiles, and then the substrates are laminated. Then, the laminate is pressurized and heated for removing microspaces. Finally, the adhesive is cured using, for example, a UV lamp.

Abstract: A large-sized organic EL display unit is formed by bonding four small display panels on junction surfaces so that the pitch between emission parts adjacent to each other over the small display panels is equal to the pitch between the emission parts in the small display panels, so that the junction between the adjacent ones of the small electroluminescence display panels is inconspicuous.

Abstract: A large-sized organic EL display unit is formed by bonding four small display panels on junction surfaces so that the pitch between emission parts adjacent to each other over the small display panels is equal to the pitch between the emission parts in the small display panels, so that the junction between the adjacent ones of the small electroluminescence display panels is inconspicuous.

Abstract: A photovoltaic device has at least one set of amorphous semiconductor layers forming a p-i-n junction structure, wherein at least one of the semiconductor layers having a given thickness, is doped with nitrogen and oxygen to a depth forming at least part of said given thickness. Such a photovoltaic device is fabricated by depositing on a substrate at least one set of amorphous semiconductor layers which form a p-i-n junction structure, and by doping at least one of the layers with nitrogen and oxygen to a depth forming at least part of the thickness of the doped layer.

Abstract: An electrophotographic photosensitive member comprising (a) a substrate made of an electrically conductive material, (b) a silicide layer formed on the surface of the substrate, and (c) a photoconductive layer superposed on the silicide layer being composed chiefly of amorphous silicon; which is usable for copying machines and intelligent copying machine.

Abstract: A method for producing a semiconductor device uses trimethyl boron (B(CH.sub.3).sub.3) of triethyl boron (B(C.sub.2 H.sub.5).sub.3) or a mixture thereof as a p-type dopant and/or a band gap widening source material gas in a process for forming a p-type amorphous semiconductor film. Accordingly, the quantity and the number of different gases which are used can be reduced and also the photoconductivity and dark conductivity can be improved, whereby a semiconductor device suitable for photovoltaic cells, photo sensors and the like using a p-type amorphous semiconductor film having a wide optical band gap can be produced.

Abstract: A method for fabricating a periodically multilayered film having a plurality of amorphous thin layers of different kinds stacked periodically is performed by forming at least one kind of the layers in the stack by a photo CVD method, whereby a more definite periodicity in the composition of the lattice and fewer defects are achieved.

Abstract: A photovoltaic device has a semiconductive multilayer of one conductivity type, which includes a plurality of amorphous thin constituent layers of different kinds stacked periodically to form at least one quantum well. A semiconductor layer of an i-type, which is contiguous to the multilayer so that light may be applied to the i-type layer through the multilayer.

Abstract: An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photosensitivity and charge retaining ability at the surface layer, the photoconductive layer and the surface layer being composed chiefly of amorphous silicon, the surface layer being a layer containing carbon forming an insulating material as combined with the amorphous silicon, and the content of the carbon based on the silicon atoms being low toward the substrate and high toward the surface of the surface layer; which is usable for copying machines and intelligent copying machines.

Abstract: An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.

Abstract: An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photoconductivity and charge retaining ability at the surface layer, in which the photoconductive layer and the surface layer being composed chiefly of amorphous silicon, the surface layer being a layer containing a substance forming an insulating material as combined with the amorphous silicon, and the content of the substance based on the silicon atoms being low toward the substrate and high toward the surface of the surface layer; which is usable for copying machines and intelligent copying machines.

Abstract: An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.