Abstract: The invention is directed to a solution feeding apparatus and a solution feeding method that are capable of feeding solution from a container until the container is completely empty while maintaining a precise feeding rate to the end of the feeding process. The solution feeding apparatus may include a solution-feeding pump connected via a tube to a container which hermetically contains a solution and is capable of changing its shape in accordance with the amount of its content is provided with a gas-liquid separation tank and a gas detection sensor. The gas-liquid separation tank serves to separate gas from solution and may be disposed in the portion of the apparatus between the container and the pump. The gas detection sensor may be disposed in the gas-liquid separation tank and serves to detect gas that has entered the solution channel.

Abstract: A solution supplying device is disclosed, that comprises a gas-solution separation tank for stocking an undiluted process solution supplied from a package that packs the undiluted process solution, a solution supplying pump for supplying the undiluted process solution stocked in the gas-solution separation tank to a processing tank, and an overpressure release valve for varying the inner pressure of the gas-solution separation tank. With the overpressure release valve, the solution supplying device can use a small solution supplying pump. Thus, a device such as an automatic developing device that performs a solution process can be compactly structured.

Abstract: The invention is directed to an apparatus and method for feeding solution from a container with high accuracy. An embodiment of the apparatus is provided as a container hermetically containing a solution is made of a high polymer that permits the container to change its shape in accordance with the amount of its content. The container is removably connected to a tube for forming an isolated conduit extending from the container via a pump to the destination to which the solution is fed. The isolated conduit is provided with a gas-liquid separation tank for separating gas from the solution and a gas trap section communicating with the gas-liquid separation tank. The gas-liquid separation tank and the gas trap section are located between the container and the pump, and the gas trap section has a variable volume. Further, a desired number of isolated conduits may extend via respective pumps to the destination to which the solution is fed.

Abstract: A solution supplying device is disclosed, that comprises a gas-solution separation tank for stocking an undiluted process solution supplied from a package that packs the undiluted process solution, a solution supplying pump for supplying the undiluted process solution stocked in the gas-solution separation tank to a processing tank, and an overpressure release valve for varying the inner pressure of the gas-solution separation tank. With the overpressure release valve, the solution supplying device can use a small solution supplying pump. Thus, a device such as an automatic developing device that performs a solution process can be compactly structured.

Abstract: Color development composition and process. The compositions of this invention contain a color developer containing poly(N-hydroxyl alkyleneimine) and/or a derivative thereof, which are represented by general formula (I) shown below: ##STR1## wherein: "R" in said formula (I) represents an alkylene group, which may be substituted by a hydroxyl group, a carboxyl group, a sulfo group or other similar groups and may contain carbonyl linkage, ether linkage, double bond or other similar bond or linkage, and may also have a cyclic structure;" and ".sub.n " in said formula (I) represents an integer in the range from 10 to 10,000. These compositions are used for processing silver halide-type color sensitized material. These compositions maintain the usable life of a color developer, do not cause decrease of color density or deterioration of quality of photographs such as fogging, and have no odor or deleterious substance.

Abstract: A semiconductor device with one or two conductive layers comprising a nitride of a high-melting transition metal of one of Groups IV, V and VI of the Periodic Table deposited between a III-V compound, such as GaAs, semiconductor substrate and an electrode metal layer.

Abstract: In a method for manufacturing a junction type field-effect transistor, there is formed a gate region having one portion over which a source electrode extends and the other portion which allows an essential gate function. These portions are formed by diffusing impurities through openings of different masks.

Abstract: A junction field effect transistor has a first conductivity type substrate with high impurity concentration, a first conductivity type layer with low impurity concentration which is layered on the substrate, a first region of first conductivity type and with high impurity concentration which is formed in the surface region of the layer, and a second region of second conductivity type and with high impurity concentration which is formed in the surface region of the layer, substantially surrounding the side wall of the first region. The thickness of the layer is within the range from 4.0 to 6.0 .mu.m. The minimum width of the portion surrounded by the second region and the impurity concentration of the layer fall within the area with four corners A, B, C and D where these corners correspond to the four coordinates (log.sub.10 4.times.10.sup.15, 2.0), (log.sub.10 18.times.10.sup.15, 1.2), (log.sub.10 18.times.10.sup.15, 0.5) and (log.sub.10 4.times.10.sup.15, 1.

Abstract: A Schottky semiconductor device includes a gallium arsenide substrate, a first metal layer formed of niobium, tantalum or vanadium to define a Schottky junction with the substrate, a second metal layer of platinum or palladium formed on the first metal layer and a third metal layer superposed on said second metal layer.