Abstract: Provided are a fine-particulate organic semiconductor material, a thin organic semiconductor film and an organic transistor. The fine-particulate organic semiconductor material is in a form of fine particles and is usable as an organic semiconductor material. The fine particles are fine thermotropic liquid crystal particles that undergo a phase transition into a liquid crystal state when heated to a temperature of from 50° C. to 350° C. The fine-particulate organic semiconductor material can easily and uniformly form the thin organic semiconductor film over a large area by a film printing process or a dispersion coating process. The thin organic semiconductor film has high electron mobility and high ON/OFF value.

Abstract: Provided are an organic semiconductor material, organic semiconductor thin film and organic thin-film transistor, which contain a perylene tetracarboxylic diimide derivative represented by the following formula (1): In the formula (1), R1 means a linear or branched alkyl group having from 1 to 20 carbon atoms, R2 means a linear or branched alkyl group having from 2 to 6 carbon atoms, R3 means a linear or branched alkyl group having from 2 to 6 carbon atoms, X1 and X2 each mean a heteroatom selected from an oxygen atom, sulfur atom or selenium atom, Y means a halogen atom or cyano group, m stands for a number of from 0 to 4, and n stands for a number of from 0 to 2. Further, the alkyl groups represented by R1 and R2 may each be substituted with one or more fluorine atoms.

Abstract: Provided are a fine-particulate organic semiconductor material, a thin organic semiconductor film and an organic transistor. The fine-particulate organic semiconductor material is in a form of fine particles and is usable as an organic semiconductor material. The fine particles are fine thermotropic liquid crystal particles that undergo a phase transition into a liquid crystal state when heated to a temperature of from 50° C. to 350° C. The fine-particulate organic semiconductor material can easily and uniformly form the thin organic semiconductor film over a large area by a film printing process or a dispersion coating process. The thin organic semiconductor film has high electron mobility and high ON/OFF value.

Abstract: Provided are an organic semiconductor material, organic semiconductor thin film and organic thin-film transistor, which contain a perylene tetracarboxylic diimide derivative represented by the following formula (1): In the formula (1), R1 means a linear or branched alkyl group having from 1 to 20 carbon atoms, R2 means a linear or branched alkyl group having from 2 to 6 carbon atoms, R3 means a linear or branched alkyl group having from 2 to 6 carbon atoms, X1 and X2 each mean a heteroatom selected from an oxygen atom, sulfur atom or selenium atom, Y means a halogen atom or cyano group, m stands for a number of from 0 to 4, and n stands for a number of from 0 to 2. Further, the alkyl groups represented by R1 and R2 may each be substituted with one or more fluorine atoms.

Abstract: Fluorescent colorant compositions contain a pigment and a resin. The pigment is a crystalline, azo-based, fluorescent pigment obtained from a coupling reaction of a specific diazo compound, which was obtained from a particular aromatic amine, with a particular acetoacetylamino-containing aromatic coupler. As crystalline characteristics of the crystalline, azo-based, fluorescent pigment, the ratio (h/w) of a height (h) of a maximum peak to its half-value width (w) in a diffraction angle (20) range of from 5 to 35° in an x-ray diffraction spectrum of the pigment may preferably be 20 or greater. Also disclosed are coloring processes and colored articles, which make use of the fluorescent colorant compositions.

Abstract: In order to apply pressure and heat to a sheet material as required in the manufacture of a laminated sheet material, the sheet material is conveyed in through an entrance opening of a pressure vessel, along through an interior space thereof, and out through an exit opening thereof, substantially filled with a pressure medium which is maintained at a temperature above its melting point in the interior space of the pressure vessel, but is maintained at a temperature below its melting point in the entrance and exit openings of the pressure vessel, so as to accomplish sealing in such zones by solidification of the pressure medium, whereby enabling continuously to treat a long sheet material under constant application of pressure and heat over a relatively long time period in which respective portions of the sheet material traverse the pressure vessel.

Abstract: A method for manufacturing a laminated plate material by compression forming, in which material for lamination is sandwiched between two pressure plates, and a layer of fluid pressure medium is sandwiched between said material for lamination and one of said pressure plates and is pressurized so as to pressurize said material for lamination. Thereby, the pressure is well distributed over the superficies of the material for lamination, thus ensuring a good and uniform product. A device is also disclosed for performing the method.