Abstract: According to one embodiment, a power generation element includes a first conductive region including a first surface, a plurality of second conductive regions, and a plurality of insulating structure regions. The second conductive regions are arranged along the first surface. A gap is provided between the second conductive regions and the first surface. One of the structure regions is provided between one of the second conductive regions and the first surface. An other one of the structure regions is provided between an other one of the second conductive regions and the first surface.

Abstract: According to one embodiment, an electron source includes a base body and a first cathode layer. The first cathode layer includes a first diamond layer including a plurality of first polycrystalline diamonds, and a first member including a first element. At least a part of the first diamond layer is located between the base body and the first member. The first element includes at least one selected from the group consisting of Pd, Ni, Co, W, Mo, Ir and Ru.

Abstract: According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.

Abstract: According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0<x1?1) including a third element including at least one selected from the group consisting of Si, Ge, Te and Sn. A +c-axis direction of the third region includes a component in a direction from the first region toward the second region.

Abstract: According to one embodiment, a thermionic power generation element includes a cathode, an anode, and an insulating member. The cathode includes an electrically-conductive material. The anode includes an electrically-conductive material. The insulating member is located between the cathode and the anode. The cathode and the anode have a gap between the cathode and the anode. A first through-hole is provided in the anode. The first through-hole extends through the anode in a first direction and communicates with the gap. The first direction is from the cathode toward the anode.

Abstract: According to one embodiment, a plasma source includes a container being configured to store a gas, a cathode member, and an anode member. The cathode member is provided in the container. The cathode member includes a plurality of first cathode layers. Each the cathode layers are arranged along a plurality of sides of a polygon. Each of the first cathode layers includes a first surface facing inside the polygon. The first surface is planar. The anode member is provided in the container.

Abstract: According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, and a first member. The first member is provided between the first conductive layer and the second conductive layer. The first member includes a first semiconductor having polarity. A gap is between the second conductive layer and the first member. A <000-1> direction of the first semiconductor is oblique to a first direction from the first conductive layer toward the second conductive layer.

Abstract: According to one embodiment, an electron-emitting electrode includes a first member, a first diamond member, and a second diamond member. A surface of the first member includes a first region and a second region. The first diamond member is provided at the first region. The first diamond member includes a first element that includes at least one of nitrogen, phosphorus, arsenic, antimony, and bismuth. The second diamond member is provided at the second region. The second diamond member includes a second element that includes at least one of boron, aluminum, gallium, and indium.

Abstract: According to one embodiment, an electron-emitting electrode includes a first member, a first diamond member, and a second diamond member. A surface of the first member includes a first region and a second region. The first diamond member is provided at the first region. The first diamond member includes a first element that includes at least one of nitrogen, phosphorus, arsenic, antimony, and bismuth. The second diamond member is provided at the second region. The second diamond member includes a second element that includes at least one of boron, aluminum, gallium, and indium.

Abstract: According to one embodiment, a switch device includes a container configured to house a gas, a cathode located in the container, a first anode located in the container, and a second anode located in the container. A second direction from the cathode toward the second anode crosses a first direction from the cathode toward the first anode. A second distance between the cathode and the second anode is greater than a first distance between the cathode and the first anode.

Abstract: According to one embodiment, a power generation element includes a first conductive region including a first surface, a plurality of second conductive regions, and a plurality of insulating structure regions. The second conductive regions are arranged along the first surface. A gap is provided between the second conductive regions and the first surface. One of the structure regions is provided between one of the second conductive regions and the first surface. An other one of the structure regions is provided between an other one of the second conductive regions and the first surface.

Abstract: According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.

Abstract: According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0<x1?1) including a third element including at least one selected from the group consisting of Si, Ge, Te and Sn. A +c-axis direction of the third region includes a component in a direction from the first region toward the second region.

Abstract: According to one embodiment, a power generation element includes an element part. The element part includes a first conductive member, a second conductive member, and a plurality of first structure bodies provided between the first conductive member and the second conductive member. One of the first structure bodies includes a first portion and a second portion. The first portion is fixed to the first conductive member. The second portion is between the first portion and the second conductive member. A second length along a second direction of the second portion is less than a first length along the second direction of the first portion. The second direction crosses a first direction from the first conductive member toward the second conductive member.

Abstract: According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, and a first member. The first member is provided between the first conductive layer and the second conductive layer. The first member includes a first semiconductor having polarity. A gap is between the second conductive layer and the first member. A <000-1> direction of the first semiconductor is oblique to a first direction from the first conductive layer toward the second conductive layer.

Abstract: A switch device of an embodiment includes a first electrode including a first layer including at least one selected from the group consisting of B, C, Al, Si, and Ga, a second electrode separated from the first electrode, a first grid disposed between the first electrode and the second electrode, and a second grid disposed between the first grid and the second electrode.

Abstract: A switch device of an embodiment includes a first electrode including a first layer including at least one selected from the group consisting of B, C, Al, Si, and Ga, a second electrode separated from the first electrode, a first grid disposed between the first electrode and the second electrode, and a second grid disposed between the first grid and the second electrode.

Abstract: A laminated body of an embodiment includes: a silicon layer; a first beryllium oxide layer on the silicon layer; and a diamond semiconductor layer on the first beryllium oxide layer.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Abstract: A laminated body of an embodiment includes: a silicon layer; a first beryllium oxide layer on the silicon layer; and a diamond semiconductor layer on the first beryllium oxide layer.