Patents by Inventor Hisao Udagawa

Hisao Udagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Surface mount TO-220 package and process for the manufacture thereof
    Patent number: 6291262
    Abstract: A surface mount TO-220 package includes leads which are bent within the molded housing and formed prior to molding the housing around the lead frame. A single gauge of frame material is used for both the leads and the main pad area. The bends reduce the height of the package and reduce mechanical stresses in the molded housing.
    Type: Grant
    Filed: May 3, 2000
    Date of Patent: September 18, 2001
    Assignee: International Rectifier Corp.
    Inventors: Hisao Udagawa, Hiroshi Kotani
  • Surface mount TO-220 package and process for the manufacture thereof
    Patent number: 6114750
    Abstract: A surface mount TO-220 package includes leads which are bent within the molded housing and formed prior to molding the housing around the lead frame. A single gauge of frame material is used for both the leads and the main pad area. The bends reduce the height of the package and reduce mechanical stresses in the molded housing.
    Type: Grant
    Filed: September 30, 1997
    Date of Patent: September 5, 2000
    Assignee: International Rectifier Corp.
    Inventors: Hisao Udagawa, Hiroshi Kotani
  • Gate turn-off thyristor for reducing the on current thereof
    Patent number: 4170020
    Abstract: The invention discloses a gate controlled semiconductor device in which a gate electrode is substantially divided into many pieces. And the semiconductor device comprises a semiconductive element having at least one P-N junction formed by at least a pair of P-type diffusion regions and N-type diffusion regions, a cathode assembly including a metallic layer deposited on a cathode-emitter layer formed on a surface of said semiconductive element, an anode electrode assembly and gate electrode assemblies which includes a plural separated metallic layers provided around the cathode electrode assemblies of the cathode-emitter layer.
    Type: Grant
    Filed: April 4, 1977
    Date of Patent: October 2, 1979
    Assignees: Kabushiki Kaisha Meidensha, International Rectifier Corporation, Japan Ltd.
    Inventors: Tetsuro Sueoka, Hisao Udagawa