Patents by Inventor Hisao Watarai
Hisao Watarai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6236559Abstract: A capacitor comprising a metal oxide dielectric film deposited by chemical vapor deposition includes dissolving at least one organometallic CVD precursor compound in a solvent system including tetrahydrofuran to form a liquid solution; vaporizing the liquid solution including the at least one organometallic compound; and forming the metal oxide dielectric thin film by depositing at least a portion of the at least one organometallic compound from the vaporized solution on a substrate.Type: GrantFiled: December 16, 1999Date of Patent: May 22, 2001Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Fusaoki Uchikawa, Shigeru Matsuno, Shinichi Kinouchi, Hisao Watarai
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Patent number: 6212059Abstract: A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material including a liquid solution of respective organometallic compounds of barium, strontium, and titanium dissolved in tetrahydrofuran.Type: GrantFiled: June 13, 2000Date of Patent: April 3, 2001Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Fusaoki Uchikawa, Shigeru Matsuno, Shinichi Kinouchi, Hisao Watarai
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Patent number: 6103002Abstract: The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.Type: GrantFiled: July 9, 1998Date of Patent: August 15, 2000Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Fusaoki Uchikawa, Shigeru Matsuno, Shinichi Kinouchi, Hisao Watarai
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Patent number: 6063443Abstract: The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.Type: GrantFiled: July 2, 1996Date of Patent: May 16, 2000Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Fusaoki Uchikawa, Shigeru Matsuno, Shinichi Kinouchi, Hisao Watarai
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Patent number: 5583058Abstract: An object of the present invention is to provide a highly integrated infrared detecting element array having infrared detecting elements which are disposed at a high density and have a low heat capacity each. An insulator film 2 is provided on a silicon substrate 1 having upper surface in a {100} plane; opening portions are defined by etching right-angled triangular portions defined at four corners of each of right-angled quadrilaterals arranged in matrix array and enclosed by two orthogonally crossing pairs of parallel linear portions extending on the insulator film a pyramid cavity; 3 is defined into the silicon substrate underlying the insulator film 2 by anisotropically etching the silicon substrate; and infrared detecting elements are formed on the insulator film 2.Type: GrantFiled: May 17, 1994Date of Patent: December 10, 1996Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Yoshikazu Utsumi, Akira Yamada, Masatomi Okumura, Hisao Watarai, Ken Sato, Takehiko Sato, Yuichi Sakai
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Patent number: 5555154Abstract: The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.Type: GrantFiled: January 3, 1995Date of Patent: September 10, 1996Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Fusaoki Uchikawa, Shigeru Matsuno, Shinichi Kinouchi, Hisao Watarai
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Patent number: 5523564Abstract: A thermal-type infrared detecting element is provided which includes an infrared detecting member, a support member supporting the infrared detecting member, a substrate holding the support member, and a low thermal conduction part intervening between the substrate and a central portion of the support member, the support member having a link portion in at least a peripheral portion thereof which links the support member to the substrate and slits and/or grooves defined at a location adjacent the link portion. This infrared detecting element exhibits excellent sensitivity and responsiveness while requiring no cooling, and a one- or two-dimensional array of the element assures clear imaging with less crosstalk.Type: GrantFiled: May 24, 1994Date of Patent: June 4, 1996Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Akira Yamada, Takehiko Sato, Yoshikazu Utsumi, Hisao Watarai
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Patent number: 5372850Abstract: In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 100.degree. C. contacts to the raw material compound at least in one of processes for vaporizing or transporting said raw material compound. The raw material compound of oxide-system dielectric thin film can be vaporized stably and transported to the reactor at a low temperature than before. Therefore, a composition can be controlled homogeneously and an oxide-system dielectric thin film having a good performance can be manufactured.Type: GrantFiled: February 17, 1993Date of Patent: December 13, 1994Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Fusaoki Uchikawa, Shigeru Matsuno, Shin-ichi Kinouchi, Toshihisa Honda, Takeharu Kuroiwa, Hisao Watarai, Takashi Higaki
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Patent number: 5134101Abstract: The improved dielectric porcelain for use at high frequencies is represented by the general formula:xSrO.multidot.yCaO.multidot.z[(1-m)TiO.sub.2 .multidot.m/2{TaO.sub.5/2 .multidot.(1-n)GaO.sub.3/2 .multidot.nGdO.sub.3/2 .music-sharp.][where 0.42.ltoreq.x.ltoreq.0.54 (or 0.06.ltoreq.x.ltoreq.0.18);0.06.ltoreq.y.ltoreq.0.18 (or 0.42.ltoreq.y.ltoreq.0.54);z=0.40;0.05.ltoreq.m.ltoreq.0.70;0.00.ltoreq.n.ltoreq.1.00;x+y=0.6]with Mn.sub.2 O.sub.3 being contained in an amount of up to 3 wt% of the total amount. The porcelain can be formulated from essentially similar basic compositions and yet it exhibits specific dielectric constants over a broad range on the order of 20-60 in the microwave frequency region and, at the same time, it has commerically acceptable high values of Q factor as well as stable and small temperature coefficients of dielectric constant.Type: GrantFiled: December 12, 1991Date of Patent: July 28, 1992Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Akira Yamada, Toshihisa Honda, Yoshikazu Utsumi, Hisao Watarai
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Patent number: 5128290Abstract: The present invention provides microwave ceramic dielectric materials having large relative dielectric constant, very large Q, and stable and small temperature coefficient.The ceramic dielectric materials of the present invention are expressed by the general formula:[{BaO}.sub.x {TiO.sub.2 }.sub.y {(Sm.sub.2 O.sub.3).sub.1-m-n (SrO.cndot.CeO.sub.2).sub.m (CaO.cndot.CeO.sub.2).sub.n }.sub.z ].sub.1-A [SrTiO.sub.3 ].sub.Awherein, 0.1.ltoreq.x.ltoreq.0.25, 0.6.ltoreq.y.ltoreq.0.85, 0.05.ltoreq.z.ltoreq.0.3, 0.ltoreq.m.ltoreq.0.80, 0.ltoreq.n<0.8, x+y+z=1, m+n.ltoreq.0.8, x+y+z=1, 0<A.ltoreq.0.40; x,y,z are expressed by mol fraction.Type: GrantFiled: June 26, 1991Date of Patent: July 7, 1992Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Akira Yamada, Toshihisa Honda, Hisao Watarai, Kiyoshi Saitou, Yoshikazu Utsumi
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Patent number: 5104836Abstract: A dielectric ceramics for high frequencies having a structure being represented by the following general formula:Sr.sub.3(1-x) Ca.sub.3x Ti.sub.2 O.sub.7 (where: 0.66<x.ltoreq.0.84).The dielectric ceramics is produced by blending and sintering strontium carbonate, calcium carbonate and titanium oxide.Type: GrantFiled: February 27, 1991Date of Patent: April 14, 1992Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Akira Yamada, Toshihisa Honda, Hisao Watarai
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Patent number: 5002913Abstract: A dielectric ceramics for high frequencies having its dielectric constant of as high as 80 and a sufficiently high Q value (1/dielectric loss) of 1,000 or above, even in a micro-wave region, which is a compound having a structure of Sr.sub.3 Ti.sub.2 O.sub.7, and being represented by the following general formula: Sr.sub.3(1-x) Ca.sub.3x Ti.sub.2 O.sub.7 (where: 0.1<x.ltoreq.0.55).Type: GrantFiled: December 20, 1989Date of Patent: March 26, 1991Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Akira Yamada, Susumu Kawamata, Hirosi Nakajo, Hisao Watarai
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Patent number: 4673910Abstract: A moisture sensitive element having on an insulating substrate a moisture sensitive section that changes its electrical resistance according to the humidity of atmosphere. The moisture sensitive section is prepared by mixing a polymerized organic silicon compound with particles of a moisture sensitive, electrically resistant material, applying a coat of the resulting blend onto the insulating substrate, and sintering the coat. The element is strong, has good moisture sensitivity characteristics and can be used for an extended period with little decrease in the moisture sensitivity and little change in the value of resistance.Type: GrantFiled: September 29, 1982Date of Patent: June 16, 1987Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Fusaoki Uchikawa, Morihisa Takeuchi, Kozo Shimamoto, Kunihiko Miyao, Kimio Momiyama, Hisao Watarai
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Patent number: 4636806Abstract: A recording medium is disclosed, which comprises as the main component an amorphous lead oxide or a lead oxide at the metastable state, having the formula of PbL.sub.x M.sub.y O.sub.z wherein L and M each indicate elements other than Pb and O. The recording mediums are drastically changed in their electrical properties and optical properties by application of heat, due to the characteristics inherent in the main component, and such changes make the recording medium highly useful for recording by laser light or heat.Type: GrantFiled: March 29, 1985Date of Patent: January 13, 1987Assignees: Research Development Corporation of Japan, Hisao Watarai, Masahiro Tanaka, Shuji Masuda, Kenji Suzuki, Tsuyoshi MasumotoInventors: Hisao Watarai, Masahiro Tanaka, Shuji Masuda, Kenji Suzuki, Tsuyoshi Masumoto
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Patent number: 4621249Abstract: A moisture sensitive element having on an insulating substrate a moisture sensitive section that changes its electrical resistance according to the humidity of atmosphere. The moisture sensitive section is prepared by mixing a polymerized organic silicon compound with particles of a moisture sensitive, electrically resistant material, applying a coat of the resulting blend onto the insulating substrate, and sintering the coat. The element is strong, has good moisture sensitivity characteristics and can be used for an extended period with little decrease in the moisture sensitivity and little change in the value of resistance.Type: GrantFiled: January 31, 1985Date of Patent: November 4, 1986Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Fusaoki Uchikawa, Morihisa Takeuchi, Kozo Shimamoto, Kunihiko Miyao, Kimio Momiyama, Hisao Watarai