Patents by Inventor Hisashi Kasai
Hisashi Kasai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105594Abstract: An anti-fuse element includes a first electrode, an insulating layer disposed on the first electrode, and a second electrode disposed on the insulating layer. The insulating layer includes a first region and a second region, with a thickness of the first region being smaller than a thickness of the second region. An outer edge of the second electrode is located inward of an outer edge of the insulating layer in a top view.Type: ApplicationFiled: September 27, 2023Publication date: March 28, 2024Inventor: Hisashi KASAI
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Patent number: 10396249Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.Type: GrantFiled: December 13, 2017Date of Patent: August 27, 2019Assignee: NICHIA CORPORATIONInventors: Hirofumi Kawaguchi, Akinori Yoneda, Hisashi Kasai, Kazuki Kashimoto, Masafumi Itasaka
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Patent number: 10224470Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.Type: GrantFiled: August 25, 2016Date of Patent: March 5, 2019Assignee: NICHIA CORPORATIONInventors: Akinori Yoneda, Akiyoshi Kinouchi, Hisashi Kasai, Yoshiyuki Aihara, Hirokazu Sasa, Shinji Nakamura
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Publication number: 20180102460Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.Type: ApplicationFiled: December 13, 2017Publication date: April 12, 2018Inventors: Hirofumi KAWAGUCHI, Akinori YONEDA, Hisashi KASAI, Kazuki KASHIMOTO, Masafumi ITASAKA
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Patent number: 9876147Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.Type: GrantFiled: June 3, 2016Date of Patent: January 23, 2018Assignee: NICHIA CORPORATIONInventors: Hirofumi Kawaguchi, Akinori Yoneda, Hisashi Kasai, Kazuki Kashimoto, Masafumi Itasaka
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Patent number: 9553238Abstract: A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.Type: GrantFiled: November 20, 2015Date of Patent: January 24, 2017Assignee: NICHIA CORPORATIONInventors: Kazuki Kashimoto, Masafumi Itasaka, Hisashi Kasai, Naoki Azuma
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Publication number: 20160365498Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.Type: ApplicationFiled: August 25, 2016Publication date: December 15, 2016Applicant: NICHIA CORPORATIONInventors: Akinori YONEDA, Akiyoshi KINOUCHI, Hisashi KASAI, Yoshiyuki AIHARA, Hirokazu SASA, Shinji NAKAMURA
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Patent number: 9461216Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.Type: GrantFiled: June 19, 2015Date of Patent: October 4, 2016Assignee: NICHIA CORPORATIONInventors: Akinori Yoneda, Akiyoshi Kinouchi, Hisashi Kasai, Yoshiyuki Aihara, Hirokazu Sasa, Shinji Nakamura
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Publication number: 20160284940Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.Type: ApplicationFiled: June 3, 2016Publication date: September 29, 2016Inventors: Hirofumi KAWAGUCHI, Akinori YONEDA, Hisashi KASAI, Kazuki KASHIMOTO, Masafumi ITASAKA
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Patent number: 9385279Abstract: A light-emitting device includes a semiconductor light-emitting element, a first resin layer, a first metallic layer, a second resin layer, and a second metallic layer. The semiconductor light-emitting element includes a semiconductor stacked body and an electrode provided on one side of the semiconductor stacked body. The second resin layer is provided on the first resin layer and has a lower surface in contact with the first resin layer and an upper surface opposite to the lower surface. The second metallic layer is provided in the second resin layer and has a metallic lower surface and a metallic upper surface opposite to the metallic lower surface. The metallic upper surface is exposed from the second resin layer. The metallic upper surface of the second metallic layer is at least partially lower in height from the semiconductor stacked body than the upper surface of the second resin layer.Type: GrantFiled: May 28, 2015Date of Patent: July 5, 2016Assignee: NICHIA CORPORATIONInventors: Takayuki Sogo, Takanobu Sogai, Hisashi Kasai
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Patent number: 9385280Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.Type: GrantFiled: May 16, 2014Date of Patent: July 5, 2016Assignee: NICHIA CORPORATIONInventors: Hirofumi Kawaguchi, Akinori Yoneda, Hisashi Kasai, Kazuki Kashimoto, Masafumi Itasaka
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Publication number: 20160149085Abstract: A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.Type: ApplicationFiled: November 20, 2015Publication date: May 26, 2016Applicant: NICHIA CORPORATIONInventors: Kazuki KASHIMOTO, Masafumi ITASAKA, Hisashi KASAI, Naoki AZUMA
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Patent number: 9343617Abstract: A method of producing light emitting elements includes providing a wafer that includes a growth substrate and a semiconductor structure formed on the growth substrate, a lower side of the wafer being a growth substrate side, and an upper side of the wafer being a semiconductor structure side as an upper side; forming a separation groove in the wafer from the upper side of the wafer to demarcate portions of the semiconductor structure, the separation groove extending in a depth direction to a location in the wafer; forming a p-electrode and an n-electrode on an upper side of each of the demarcated portions of the semiconductor structure; forming a dielectric multilayer film at an upper side of the wafer, including portions defining the separation groove, by using an atomic layer deposition method; and separating the wafer into a plurality of light emitting elements by removing a portion of the wafer from a lower side of the wafer to at least the location to which the separation groove extends.Type: GrantFiled: June 11, 2015Date of Patent: May 17, 2016Assignee: NICHIA CORPORATIONInventors: Hidetsugu Sumitomo, Hisashi Kasai
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Publication number: 20150364643Abstract: A method of producing light emitting elements includes providing a wafer that includes a growth substrate and a semiconductor structure formed on the growth substrate, a lower side of the wafer being a growth substrate side, and an upper side of the wafer being a semiconductor structure side as an upper side; forming a separation groove in the wafer from the upper side of the wafer to demarcate portions of the semiconductor structure, the separation groove extending in a depth direction to a location in the wafer; forming a p-electrode and an n-electrode on an upper side of each of the demarcated portions of the semiconductor structure; forming a dielectric multilayer film at an upper side of the wafer, including portions defining the separation groove, by using an atomic layer deposition method; and separating the wafer into a plurality of light emitting elements by removing a portion of the wafer from a lower side of the wafer to at least the location to which the separation groove extends.Type: ApplicationFiled: June 11, 2015Publication date: December 17, 2015Applicant: NICHIA CORPORATIONInventors: Hidetsugu SUMITOMO, Hisashi KASAI
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Publication number: 20150349207Abstract: A light-emitting device includes a semiconductor light-emitting element, a first resin layer, a first metallic layer, a second resin layer, and a second metallic layer. The semiconductor light-emitting element includes a semiconductor stacked body and an electrode provided on one side of the semiconductor stacked body. The second resin layer is provided on the first resin layer and has a lower surface in contact with the first resin layer and an upper surface opposite to the lower surface. The second metallic layer is provided in the second resin layer and has a metallic lower surface and a metallic upper surface opposite to the metallic lower surface. The metallic upper surface is exposed from the second resin layer. The metallic upper surface of the second metallic layer is at least partially lower in height from the semiconductor stacked body than the upper surface of the second resin layer.Type: ApplicationFiled: May 28, 2015Publication date: December 3, 2015Applicant: NICHIA CORPORATIONInventors: Takayuki SOGO, Takanobu SOGAI, Hisashi KASAI
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Publication number: 20150311410Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.Type: ApplicationFiled: June 19, 2015Publication date: October 29, 2015Applicant: NICHIA CORPORATIONInventors: Akinori YONEDA, Akiyoshi KINOUCHI, Hisashi KASAI, Yoshiyuki AIHARA, Hirokazu SASA, Shinji NAKAMURA
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Patent number: 9093612Abstract: A provided light includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.Type: GrantFiled: April 24, 2014Date of Patent: July 28, 2015Assignee: NICHIA CORPORATIONInventors: Akinori Yoneda, Akiyoshi Kinouchi, Hisashi Kasai, Yoshiyuki Aihara, Hirokazu Sasa, Shinji Nakamura
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Publication number: 20140339587Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.Type: ApplicationFiled: May 16, 2014Publication date: November 20, 2014Applicant: NICHIA CORPORATIONInventors: Hirofumi KAWAGUCHI, Akinori YONEDA, Hisashi KASAI, Kazuki KASHIMOTO, Masafumi ITASAKA
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Patent number: 8823031Abstract: A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.Type: GrantFiled: August 30, 2012Date of Patent: September 2, 2014Assignee: Nichia CorporationInventors: Takeshi Kususe, Naoki Azuma, Toshiaki Ogawa, Hisashi Kasai
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Patent number: D736297Type: GrantFiled: July 31, 2013Date of Patent: August 11, 2015Assignee: Shikino High-Tech Co., LTD.Inventors: Kazuaki Kawasaki, Hisashi Kasai