Patents by Inventor Hisashi Kawano
Hisashi Kawano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11424141Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.Type: GrantFiled: October 19, 2018Date of Patent: August 23, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Jian Zhang, Takao Inada, Hisashi Kawano, Seigo Fujitsu, Hideaki Sato, Teruaki Konishi, Toshiyuki Shiokawa, Koji Ogura, Hiroshi Yoshida
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Publication number: 20210335621Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.Type: ApplicationFiled: July 6, 2021Publication date: October 28, 2021Inventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
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Patent number: 11087992Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.Type: GrantFiled: January 31, 2020Date of Patent: August 10, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
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Patent number: 11075096Abstract: A substrate processing method includes etching a substrate on which a silicon oxide film and a silicon nitride film are formed with a phosphoric acid processing liquid. In the etching, a silicon concentration in the phosphoric acid processing liquid is a first silicon concentration at which the silicon oxide film is etched, from a start time until a first time interval has elapsed.Type: GrantFiled: November 6, 2019Date of Patent: July 27, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Takao Inada, Hironobu Hyakutake, Hisashi Kawano
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Patent number: 10923368Abstract: A substrate processing apparatus according to an embodiment includes a substrate processing tank, a temperature adjustment unit, and a controller. The substrate processing tank is configured to perform an etching processing by immersing a substrate in a phosphoric acid processing liquid therein. The temperature adjustment unit is configured to adjust the temperature of the phosphoric acid processing liquid. The controller is configured to control the temperature adjustment unit to lower the temperature of the phosphoric acid processing liquid as the etching processing proceeds.Type: GrantFiled: October 19, 2018Date of Patent: February 16, 2021Assignee: Tokyo Electron LimitedInventors: Takao Inada, Hisashi Kawano, Hiroki Ohno
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Patent number: 10792711Abstract: An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, wherein the treatment film comprises an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.Type: GrantFiled: December 11, 2018Date of Patent: October 6, 2020Assignee: Tokyo Electron LimitedInventors: Meitoku Aibara, Yuki Yoshida, Hisashi Kawano, Masami Yamashita, Itaru Kanno, Kenji Mochida, Motoyuki Shima
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Publication number: 20200251343Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.Type: ApplicationFiled: January 31, 2020Publication date: August 6, 2020Inventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
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Publication number: 20200152489Abstract: A substrate processing method includes etching a substrate on which a silicon oxide film and a silicon nitride film are formed with a phosphoric acid processing liquid. In the etching, a silicon concentration in the phosphoric acid processing liquid is a first silicon concentration at which the silicon oxide film is etched, from a start time until a first time interval has elapsed.Type: ApplicationFiled: November 6, 2019Publication date: May 14, 2020Inventors: Takao Inada, Hironobu Hyakutake, Hisashi Kawano
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Patent number: 10651061Abstract: A substrate processing apparatus includes a processing unit and a control unit. The processing unit is configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound. The control unit is configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.Type: GrantFiled: October 18, 2018Date of Patent: May 12, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroki Ohno, Takao Inada, Hisashi Kawano
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Publication number: 20190148183Abstract: A substrate processing apparatus according to an embodiment includes a substrate processing tank, a temperature adjustment unit, and a controller. The substrate processing tank is configured to perform an etching processing by immersing a substrate in a phosphoric acid processing liquid therein. The temperature adjustment unit is configured to adjust the temperature of the phosphoric acid processing liquid. The controller is configured to control the temperature adjustment unit to lower the temperature of the phosphoric acid processing liquid as the etching processing proceeds.Type: ApplicationFiled: October 19, 2018Publication date: May 16, 2019Inventors: Takao Inada, Hisashi Kawano, Hiroki Ohno
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Patent number: 10272478Abstract: An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment includes a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, the treatment film includes an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.Type: GrantFiled: July 27, 2015Date of Patent: April 30, 2019Assignee: Tokyo Electron LimitedInventors: Meitoku Aibara, Yuki Yoshida, Hisashi Kawano, Masami Yamashita, Itaru Kanno, Kenji Mochida, Motoyuki Shima
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Publication number: 20190122906Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.Type: ApplicationFiled: October 19, 2018Publication date: April 25, 2019Inventors: Jian Zhang, Takao Inada, Hisashi Kawano, Seigo Fujitsu, Hideaki Sato, Teruaki Konishi, Toshiyuki Shiokawa, Koji Ogura, Hiroshi Yoshida
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Publication number: 20190118227Abstract: An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, wherein the treatment film comprises an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.Type: ApplicationFiled: December 11, 2018Publication date: April 25, 2019Applicant: Tokyo Electron LimitedInventors: Meitoku AIBARA, Yuki Yoshida, Hisashi Kawano, Masami Yamashita, Itaru Kanno, Kenji Mochida, Motoyuki Shima
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Publication number: 20190122905Abstract: A substrate processing apparatus includes a processing unit and a control unit. The processing unit is configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound. The control unit is configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.Type: ApplicationFiled: October 18, 2018Publication date: April 25, 2019Inventors: Hiroki Ohno, Takao Inada, Hisashi Kawano
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Publication number: 20190096711Abstract: A substrate processing apparatus and a substrate processing method capable of suppressing precipitation of a silicon oxide while improving selectivity for etching a silicon nitride film are provided. The substrate processing apparatus includes a substrate processing tub, a phosphoric acid processing liquid supply unit, a circulation path, a SiO2 precipitation inhibitor supply unit and a mixing unit. The phosphoric acid processing liquid supply unit is configured to supply a phosphoric acid processing liquid used in performing an etching processing in the substrate processing tub. The circulation path is configured to circulate the phosphoric acid processing liquid supplied into the substrate processing tub. The SiO2 precipitation inhibitor supply unit is configured to supply a SiO2 precipitation inhibitor into the circulation path.Type: ApplicationFiled: September 27, 2018Publication date: March 28, 2019Inventors: Hiroki Ohno, Hideaki Sato, Takao Inada, Hisashi Kawano, Yoshinori Nishiwaki, Takahiko Otsu
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Publication number: 20190096710Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of suppressing precipitation of a silicon oxide while improving selectivity for etching a silicon nitride film are provided. The substrate processing apparatus includes a SiO2 precipitation inhibitor supply unit and a control unit. The SiO2 precipitation inhibitor supply unit is configured to supply a SiO2 precipitation inhibitor to be mixed into a phosphoric acid processing liquid used in performing an etching processing in a substrate processing tub. The control unit is configured to set a SiO2 precipitation inhibitor concentration contained in the phosphoric acid processing liquid based on a temperature of the phosphoric acid processing liquid, and configured to control a supply amount of the SiO2 precipitation inhibitor to achieve the set SiO2 precipitation inhibitor concentration.Type: ApplicationFiled: September 27, 2018Publication date: March 28, 2019Inventors: Hideaki Sato, Hiroki Ohno, Yoshinori Nishiwaki, Takao Inada, Hisashi Kawano
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Patent number: 10192758Abstract: A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.Type: GrantFiled: September 25, 2017Date of Patent: January 29, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yosuke Kawabuchi, Hisashi Kawano, Satoru Tanaka, Hiroyuki Suzuki, Kotaro Oishi, Kazuyoshi Shinohara, Yuki Yoshida
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Patent number: 10121646Abstract: In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.Type: GrantFiled: November 29, 2017Date of Patent: November 6, 2018Assignee: Tokyo Electron LimitedInventors: Koji Kagawa, Hisashi Kawano, Meitoku Aibara, Yuki Yoshida
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Patent number: 10062586Abstract: A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that substantially constant temperature is maintained across a substrate surface. The apparatus includes a discharge nozzle above the substrate to supply a first chemical fluid at a first temperature to a front surface of the substrate, a bar nozzle oriented in a radial direction of the substrate to supply a second chemical fluid at a second temperature to the front surface or a back surface of the substrate, the second temperature being higher than the first temperature, and where the bar nozzle includes a plurality of outlets for discharging the second chemical fluid to a plurality of contacting places on the front surface or the back surface of the substrate at different distances from the center of the substrate.Type: GrantFiled: July 23, 2014Date of Patent: August 28, 2018Assignee: Tokyo Electron LimitedInventors: Derek W Bassett, Wallace P Printz, Gentaro Goshi, Hisashi Kawano, Yoshihiro Kai
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Patent number: 9953840Abstract: A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having a surface on which a pattern having a plurality of convex portions is formed; a drying process of removing the processing liquid existing on the surface of the substrate dry the substrate, and a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process.Type: GrantFiled: December 7, 2016Date of Patent: April 24, 2018Assignee: Tokyo Electron LimitedInventors: Hiroshi Marumoto, Hisashi Kawano, Hiromi Kiyose, Mitsunori Nakamori, Kazuyuki Mitsuoka