Patents by Inventor Hisashi Mashiyama

Hisashi Mashiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor wafer and semiconductor device wafer
    Patent number: 8796820
    Abstract: A semiconductor wafer having a disc shape includes a chamfer provided around a circumferential edge of the wafer, and an anti-cracking and chipping groove provided in one or more areas around one circumference of an end face of the wafer along a circumferential direction of the end face. The anti-cracking and chipping groove is configured to prevent cracking or chipping of the end face in back grinding.
    Type: Grant
    Filed: January 24, 2012
    Date of Patent: August 5, 2014
    Assignee: Hitachi Metals, Ltd.
    Inventors: Shusei Nemoto, Hisashi Mashiyama
  • SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE WAFER
    Publication number: 20120187547
    Abstract: A semiconductor wafer having a disc shape includes a chamfer provided around a circumferential edge of the wafer, and an anti-cracking and chipping groove provided in one or more areas around one circumference of an end face of the wafer along a circumferential direction of the end face. The anti-cracking and chipping groove is configured to prevent cracking or chipping of the end face in back grinding.
    Type: Application
    Filed: January 24, 2012
    Publication date: July 26, 2012
    Applicant: Hitachi Cable, Ltd,
    Inventors: Shusei Nemoto, Hisashi Mashiyama
  • Grinding abrasive grains, abrasive, abrasive solution, abrasive solution preparation method, grinding method, and semiconductor device fabrication method
    Patent number: 7267604
    Abstract: Abrasive grains have mainly grains with a roundness of 0.50 or more and 0.75 or less, where the roundness is defined as the ratio of the circumference of a circle having the same area as that of a grain to the perimeter of that grain. An abrasive has the abrasive grains and at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound. An abrasive solution has the abrasive grains and water or hydrophilic substance.
    Type: Grant
    Filed: March 4, 2005
    Date of Patent: September 11, 2007
    Assignee: Hitachi Cable, Ltd.
    Inventors: Chie Yoshizawa, Satoshi Uematsu, Hisashi Mashiyama, Takehiko Tani
  • Semiconductor wafer cleaning method and wafer cleaned by same method
    Publication number: 20060185688
    Abstract: A semiconductor wafer cleaning method has steps of cleaning a surface of a semiconductor wafer with a cleaning solution that has an etching function; and cleaning the surface of the semiconductor wafer with a high-purity organic solvent while circulating the high-purity organic solvent so as to remove Ca and Mg on the surface of the semiconductor wafer.
    Type: Application
    Filed: January 4, 2006
    Publication date: August 24, 2006
    Inventors: Satoshi Uematsu, Hisashi Mashiyama, Takehiko Tani
  • Grinding abrasive grains, abrasive, abrasive solution, abrasive solution preparation method, grinding method, and semiconductor device fabrication method
    Publication number: 20050205836
    Abstract: Abrasive grains have mainly grains with a roundness of 0.50 or more and 0.75 or less, where the roundness is defined as the ratio of the circumference of a circle having the same area as that of a grain to the perimeter of that grain. An abrasive has the abrasive grains and at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound. An abrasive solution has the abrasive grains and water or hydrophilic substance.
    Type: Application
    Filed: March 4, 2005
    Publication date: September 22, 2005
    Inventors: Chie Yoshizawa, Satoshi Uematsu, Hisashi Mashiyama, Takehiko Tani