Abstract: A method for manufacturing a solar cell electrode, comprising the steps of: (a) applying a conductive paste for bus electrode to a wafer in order to form a bus electrode pattern; (b) depositing onto the wafer a photocurable conductive paste for finger electrode from a discharge slot of a dispenser nozzle to thereby form an uncured finger electrode pattern on the wafer, wherein the nozzle moves parallel to the wafer; and (c) curing the uncured finger electrode pattern by exposing the uncured finger electrode pattern to UV light either after forming the uncured finger electrode pattern on the wafer in the step (b), or concurrent with the step (b).

Abstract: A method for manufacturing a solar cell electrode, comprising the steps of: (a) applying a conductive paste for bus electrode to a wafer in order to form a bus electrode pattern; (b) depositing onto the wafer a photocurable conductive paste for finger electrode from a discharge slot of a dispenser nozzle to thereby form an uncured finger electrode pattern on the wafer, wherein the nozzle moves parallel to the wafer; and (c) curing the uncured finger electrode pattern by exposing the uncured finger electrode pattern to UV light either after forming the uncured finger electrode pattern on the wafer in the step (b), or concurrent with the step (b).

Abstract: An objective of this present invention is to provide a conductive paste that could obtain good electrical property, for example series resistance in an electrode. An aspect of the present invention relates to a conductive paste which comprises electrically conductive powder; glass frit which comprises, based on weight percent (wt %) of the glass frit, 8-26 wt % of SiO2, 0.1-5 wt % of Al2O3, and 73-90 wt % of lead compound, wherein lead fluoride is contained in the range of 5-28 wt % based on the total weight of the lead compound; and organic medium.

Abstract: The invention relates to a paste for forming a solar cell electrode, comprising electrically conductive metal particles, glass frit, a cross-linkable agent, a photo polymerization initiator and organic solvent, wherein the content of the cross-linkable agent is 1.0 to 20.0 wt %, the content of the photo polymerization initiator is 0.2 to 15.0 wt %, the content of the organic solvent is greater than 1.0 wt %, based on the total weight of the paste, and wherein over 90 wt % of the organic solvent based on the total weight of the organic solvent has a boiling point at 85° C. or higher.

Abstract: The invention relates to zinc-containing glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

Abstract: The invention relates to zinc-containing glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

Abstract: The invention relates to a method of manufacturing a solar cell electrode comprising steps of: (a) preparing a semiconductor substrate comprising a negative layer, a positive layer and passivation layers formed on the negative layer and the positive layer; (b) applying a conductive paste onto the passivation layer(s) formed on the positive layer, on the negative layer, or on both of the positive layer and the negative layer, wherein the conductive paste comprises; (i) a conductive powder; (ii) a glass frit comprising 45 to 81 mole percent (mol %) of PbO, 1 to 38 mol % of SiO2 and 5 to 47 mol % of B2O3, based on the total molar fraction of each component in the glass frit; and (iii) a resin binder; and (c) firing the conductive paste.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. The thick film conductor compositions include one or more electrically functional powders and one or more glass frits dispersed in an organic medium. The thick film compositions may also include one or more additive(s). Exemplary additives may include metals, metal oxides or any compounds that can generate these metal oxides during firing.

Abstract: The invention relates to zinc-containing glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

Abstract: A method of forming a photovoltaic cell conductor that comprises steps of, applying on a semiconductor substrate a thick film conductive composition comprising inorganic powders comprising electrically conductive powder, first glass frit and second glass frit, and organic medium, wherein total PbO in the glass frits is 80.5 to 83.5 wt % based on the total weight of the first glass frit and the second glass frit, and firing the thick film conductive composition applied on the semiconductor substrate.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. The thick film conductor compositions include one or more electrically functional powders and one or more glass frits dispersed in an organic medium. The thick film compositions may also include one or more additive(s). Exemplary additives may include metals, metal oxides or any compounds that can generate these metal oxides during firing.

Abstract: Described is an electrode paste for plasma display panel, which has a black pigment, a glass frit, an organic binder and a solvent, wherein the black pigment contains cobalt oxide (CO3O4) and copper-chromium-cobalt composite oxide (Cr—Cu—Co—O).

Abstract: An objective of this present invention is to provide a conductive paste that could obtain good electrical property, for example series resistance in an electrode. An aspect of the present invention relates to a conductive paste which comprises electrically conductive powder; glass frit which comprises, based on weight percent (wt %) of the glass frit, 8-26 wt % of SiO2, 0.1-5 wt % of Al2O3, and 73-90 wt % of lead compound, wherein lead fluoride is contained in the range of 5-28 wt % based on the total weight of the lead compound; and organic medium.

Abstract: An object of the present invention is to provide a lead-free bismuth glass wherein decrease of the degree of accuracy of the patterning is prevented. Specifically, the present invention provides a lead-free bismuth glass characterized in that said lead-free bismuth glass is used for an optical patterning glass material which is patterned by light irradiation and the optical-absorption coefficient to light with a wavelength of 365 nm is 300 to 3000 cm?1.

Abstract: The black bus electrode of plasma display panel is formed from a conductive composition comprising a conductive powder, glass powder, organic binder, organic solvent, and black pigment, wherein the conductive powder comprises an alloy of at least two metals selected from the group of Ru, Rh, Pd, Ag, Os, Ir, Pt and Au.

Abstract: The black bus electrode of plasma display panel is formed from a conductive composition comprising a conductive powder, glass powder, organic binder, organic solvent, and black pigment, wherein the conductive powder is coated with metal selected from the group of Ru, Rh, Pd, Os, Ir, Pt and Au.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. The thick film conductor compositions include one or more electrically functional powders and one or more glass frits dispersed in an organic medium. The thick film compositions may also include one or more additive(s). Exemplary additives may include metals, metal oxides or any compounds that can generate these metal oxides during firing.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. The thick film conductor compositions include one or more electrically functional powders and one or more glass frits dispersed in an organic medium. The thick film compositions may also include one or more additive(s). Exemplary additives may include metals, metal oxides or any compounds that can generate these metal oxides during firing.

Abstract: An object of the present invention is to provide a lead-free bismuth glass wherein decrease of the degree of accuracy of the patterning is prevented. Specifically, the present invention provides a lead-free bismuth glass characterized in that said lead-free bismuth glass is used for an optical patterning glass material which is patterned by light irradiation and the optical-absorption coefficient to light with a wavelength of 365 nm is 300 to 3000 cm?1.

Abstract: Described is an electrode paste for plasma display panel, which has a black pigment, a glass frit, an organic binder and a solvent, wherein the black pigment contains cobalt oxide (Co3O4) and copper-chromium-cobalt composite oxide (Cr—Cu—Co—O).