Abstract: A gas cleaning method includes: (a) removing a first metal element as one of contaminants from a process chamber by supplying a chlorine-containing gas into the process chamber without supplying an oxygen-containing gas; and (b) removing a second metal element as another one of the contaminants from the process chamber by supplying the oxygen-containing gas into the process chamber, wherein (b) is performed after (a).

Abstract: A method of manufacturing a semiconductor device including: mounting a substrate on a substrate mounting member that is disposed in a reaction container; heating the substrate at a predetermined processing temperature and supplying a first gas and a second gas to the substrate to process the substrate; stopping supply of the first gas and the second gas, and supplying an inert gas into the reaction container; and unloading the substrate to outside the reaction container.

Abstract: A film-forming method and a substrate processing apparatus are provided, which are capable of improving productivity of an epitaxial film of GaN by increasing the number of substrates to be processed at one time. The substrate processing apparatus for processing a substrate including an epitaxial film includes: a processing chamber configured to process the substrate, a gas supply unit configured supply a source gas for forming the epitaxial film and a cleaning gas into the processing chamber, and a control unit configured to control at least an inside temperature and an inside pressure of the processing chamber, wherein the control unit controls the gas supply unit to supply the cleaning gas into the processing chamber when the inside temperature and the inside pressure of the processing chamber reach a predetermined temperature and a predetermined pressure, respectively.

Abstract: This invention relates to a 4 group metal oxide and to a method for preparation thereof and the 4 group metal oxide prepared by adding a particle growth inhibiter to a hydrosol a hydrogel or a dried product of a hydrous 4 group metal oxide represented by MO(2-x)(OH)2x (wherein M denotes a 4 group metal and x is a number greater than 0.1 or x>0.1) followed by drying and calcining has a specific surface area of 80 m2/g or more, a pore volume of 0.2 ml/g or more and a pore sharpness degree of 50% or more and excellent heat stability and is useful for a catalyst or a catalyst carrier in which a catalyst metal is dispersed to a high degree.

Abstract: This invention provides layered porous titanium oxide comprising an inorganic oxide as a core and titanium oxide deposited on the surface of the inorganic oxide, wherein the titanium localization index B/A represented by the ratio of the proportion of titanium (Ti) to the sum of the constituent metal (M) of the inorganic oxide and titanium (Ti) determined by X-ray photoelectron spectroscopy (XPS) [B=Ti XPS/(Ti XPS+M XPS)] to the bulk mixing molar ratio of titanium (Ti) to the sum of the constituent metal (M) of the inorganic oxide and titanium (Ti) [A=Ti/(Ti+M)] is 1.6 or more and the titanium oxide is deposited on the surface of the inorganic oxide so as to be chemically and/or microscopically united to the inorganic oxide and also provides a process for producing the same and a catalyst comprising the same. The layered porous titanium oxide of this invention has a regulated pore structure, a large specific surface area, and excellent mechanical strength and is useful as a catalyst or a catalyst carrier.

Abstract: This invention provides layered porous titanium oxide comprising an inorganic oxide as a core and titanium oxide deposited on the surface of the inorganic oxide, wherein the titanium localization index B/A represented by the ratio of the proportion of titanium (Ti) to the sum of the constituent metal (M) of the inorganic oxide and titanium (Ti) determined by X-ray photoelectron spectroscopy (XPS) [B=TiXPS/(TiXPS+MXPS)] to the bulk mixing molar ratio of titanium (Ti) to the sum of the constituent metal (M) of the inorganic oxide and titanium (Ti) [A=Ti/(Ti+M)] is 1.6 or more and the titanium oxide is deposited on the surface of the inorganic oxide so as to be chemically and/or microscopically united to the inorganic oxide and also provides a process for producing the same and a catalyst comprising the same. The layered porous titanium oxide of this invention has a regulated pore structure, a large specific surface area, and excellent mechanical strength and is useful as a catalyst or a catalyst carrier.

Abstract: This invention relates to a 4 group metal oxide and to a method for preparation thereof and the 4 group metal oxide prepared by adding a particle growth inhibiter to a hydrosol a hydrogel or a dried product of a hydrous 4 group metal oxide represented by MO(2-x)(OH)2x (wherein M denotes a 4 group metal and x is a number greater than 0.1 or x>0.1) followed by drying and calcining has a specific surface area of 80 m2/g or more, a pore volume of 0.2 ml/g or more and a pore sharpness degree of 50% or more and excellent heat stability and is useful for a catalyst or a catalyst carrier in which a catalyst metal is dispersed to a high degree.

Abstract: It is an object of the present invention to make it easy to diffuse phosphorus into a silicon film and allow the phosphorus diffusion concentration to be easily controlled by varying the timing at which the dopant gas is allowed to flow. A silicon wafer 10 on whose surface an amorphous silicon film 12 has been formed is placed in a diffusion furnace. After this, phosphine (PH3) or a mixed gas containing phosphine is allowed to begin flowing over the wafer 15 and the phosphorus is diffused into the silicon film 12 before the amorphous silicon film 12 crystallizes and changes into a polysilicon film.

Abstract: A method for manufacturing a semiconductor device can efficiently form on a substrate an amorphous thin film containing small amounts of impurities without needs for a rapid annealing treatment and a frequent cleaning process. A method for manufacturing a semiconductor device comprises a film-forming step and a film-modifying step. In the film-forming step, a film formation gas from a film formation raw material supply unit 9 is supplied into a reaction chamber 1 through a shower head 6 to form an amorphous thin film including a hafnium oxide film (HfO2 film) on a substrate 4 which is rotating. In the film-modifying step, a radical generated in a reactant activation unit 11 is supplied through the same shower head 6 as used for supplying the film formation gas, so as to remove a specific element which is an impurity in the film formed in the film-forming step.

Abstract: A method for manufacturing a semiconductor device can efficiently form on a substrate an amorphous thin film containing small amounts of impurities without needs for a rapid annealing treatment and a frequent cleaning process. A method for manufacturing a semiconductor device comprises a film-forming step and a film-modifying step. In the film-forming step, a film formation gas from a film formation raw material supply unit 9 is supplied into a reaction chamber 1 through a shower head 6 to form an amorphous thin film including a hafnium oxide film (HfO2 film) on a substrate 4 which is rotating. In the film-modifying step, a radical generated in a reactant activation unit 11 is supplied through the same shower head 6 as used for supplying the film formation gas, so as to remove a specific element which is an impurity in the film formed in the film-forming step.

Abstract: It is an object of the present invention to make it easy to diffuse phosphorus into a silicon film and allow the phosphorus diffusion concentration to be easily controlled by varying the timing at which the dopant gas is allowed to flow. A silicon wafer 10 on whose surface an amorphous silicon film 12 has been formed is placed in a diffusion furnace. After this, phosphine (PH3) or a mixed gas containing phosphine is allowed to begin flowing over the wafer 15 and the phosphorus is diffused into the silicon film 12 before the amorphous silicon film 12 crystallizes and changes into a polysilicon film.

Abstract: A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.