Abstract: There is provided a method for producing an ink jet head. The method includes: first oxidizing in which, in an SOI substrate having a first SiO2 layer between a first Si layer and a second Si layer, among the first Si layer and the second Si layer, at least the first Si layer is thermally oxidized to form a second SiO2 layer; forming a nozzle hole by removing a part of the second SiO2 layer and a part of the first Si layer between the first SiO2 layer and the second SiO2 layer, by performing an etching treatment until at least the first SiO2 layer is exposed; second oxidizing in which a side wall of at least the first Si layer in the formed nozzle hole is thermally oxidized to form an SiO2 layer; opening the nozzle hole by subjecting the SiO2 layers in the nozzle hole other than at the side wall to an anisotropic dry etching treatment until at least the second Si layer is exposed; and forming a nozzle by removing the second Si layer.

Abstract: There is provided a method for producing an ink jet head. The method includes: first oxidizing in which, in an SOI substrate having a first SiO2 layer between a first Si layer and a second Si layer, among the first Si layer and the second Si layer, at least the first Si layer is thermally oxidized to form a second SiO2 layer; forming a nozzle hole by removing a part of the second SiO2 layer and a part of the first Si layer between the first SiO2 layer and the second SiO2 layer, by performing an etching treatment until at least the first SiO2 layer is exposed; second oxidizing in which a side wall of at least the first Si layer in the formed nozzle hole is thermally oxidized to form an SiO2 layer; opening the nozzle hole by subjecting the SiO2 layers in the nozzle hole other than at the side wall to an anisotropic dry etching treatment until at least the second Si layer is exposed; and forming a nozzle by removing the second Si layer.

Abstract: The method of manufacturing an inkjet head, includes: an opening section forming step of forming, with respect to a SOI substrate having a first silicon layer, a second silicon layer and a first thermal oxide film between the first silicon layer and the second silicon layer, nozzle opening sections passing through the second silicon layer and the first thermal oxide film and reaching the first silicon layer; after the opening section forming step, a first silicon layer removing step of removing the first silicon layer; and after the first silicon layer removal step, a liquid-repellent film forming step of forming a liquid-repellent film on a surface of the first thermal oxide film that has been exposed in the first silicon layer removal step.