Abstract: Reference data are subtracted from corresponding actual measurement data, and unprocessed binding quantity data, each of which represents a quantity of binding of a ligand and each of analytes, are thereby acquired. Calculation is made to find a relationship between the reference data and the unprocessed binding quantity data acquired in cases where the binding does not occur. In accordance with the relationship, variation components, which are contained in the unprocessed binding quantity data, are calculated. The variation components are subtracted from the corresponding unprocessed binding quantity data, and processed binding quantity data are thereby acquired. The processed binding quantity data are utilized for extracting an analyte capable of binding with the ligand.

Abstract: A base plate for mass spectrometry analysis is disclosed, which is used in a method in which a substance immobilized on a surface of the base plate is desorbed from the surface by application of laser light thereto and the ion of the desorbed substance is captured for mass spectrometry analysis. The base plate includes, on at least a portion of the surface thereof, a roughened metal surface capable of exciting local plasmon when exposed to laser light. The roughened metal surface is formed, for example, by forming numerous micropores in a surface of an alumina layer and filling gold particles in the micropores. Each gold particle has a head portion having a size larger than a diameter of the micropore and projecting from the surface of the alumina layer. Use of this base plate allows use of lower-power laser light.

Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

Abstract: A sensor unit of a surface plasmon resonance (SPR) assay system includes a transparent dielectric medium. A thin film has a first surface and a sensing surface. The first surface is connected with the dielectric medium to constitute an interface. The sensing surface is back to the first surface, for detecting (bio)chemical reaction. A flow cell block has a flow channel for flowing of the sample to the sensing surface. Attenuated total reflection of illuminating light is checked at the interface, to analyze interaction between ligand and analyte as samples. The flow channel includes a first inner surface, disposed opposite to the sensing surface to extend along, for passing the sample to flow between. The first inner surface has a height, defined with reference to the sensing surface, and in a range of 200-500 microns.

Abstract: A state of attenuation in total internal reflection is detected by the use of a measuring apparatus having a measuring unit and a reference unit and a measuring system which corrects result of detection by the measuring unit on the basis of result of detection by the reference unit and measures the change of a state of attenuation in total internal reflection on the basis of the corrected result of detection by the measuring unit. The difference in sensitivity between the measuring unit and the reference unit is detected before initiating the measurement of the change of a state of attenuation in total internal reflection, and result of measurement by the measuring system is calibrated on the basis of the difference in sensitivity between the measuring unit and the reference unit.

Abstract: A surface plasmon resonance assay apparatus is loaded with a sensor unit. A sensing surface of a thin film detects reaction of a sample. A dielectric prism is overlaid with the thin film to constitute an interface. A reflection angle upon occurrence of attenuated total reflection of the illuminating light is changeable according to reaction of the sample on the sensing surface. Protecting panels are disposed to face outer surfaces of the prism, for covering and protecting at least partially the outer surfaces. A first window in one of the protecting panels is positioned on a path of the illuminating light traveling for incidence on the interface, for passing the illuminating light. A second window in one remaining protecting panel is positioned on a path of the illuminating light traveling upon reflection by the interface, for passing the illuminating light.

Abstract: A measurement path is filled with air prior to performing actual measurement. A p-polarized light beam is caused to enter an interface, and the intensity distribution of the light beam reflected at the interface is detected by a photodiode array to obtain a reference intensity distribution of the light beam itself. Thereafter, the measurement path is filled with a target for measurement, and the intensity distribution of a light beam reflected at the interface is measured. Each of the measured distribution values are divided by the reference intensity distribution, to cancel out influences due to fluctuations in the intensity distribution of the light beam. Thereby, the position of an attenuated total reflection angle is detected with high accuracy. Because a light beam constituted by p-polarized light waves is utilized, separating means for separating the light beam reflected at the interface into p-polarized and s-polarized light waves becomes unnecessary.

Abstract: An object of the present invention is to provide a method for measuring the dissociation rate coefficient (Kd) by surface plasmon resonance analysis without measuring the theoretical maximum amount of binding (Rmax). The present invention provides a method for measuring the dissociation rate coefficient (Kd) of the reaction between an analyte molecule immobilized on a metal surface and a molecule that interacts with the analyte molecule by assaying changes in surface plasmon resonance signals using a surface plasmon resonance measurement device, wherein the signal and the slope of the dissociation curve of the surface plasmon resonance signal curves, or the signal ratio are used to calculate the dissociation rate coefficient (Kd).

Abstract: An object of the present invention is to provide a method for measuring a rate coefficient by surface plasmon resonance analysis with excellent accuracy, reliability, and cost performance that can improve the assay accuracy and simplify the apparatus.

Abstract: A measurement apparatus includes a dielectric block, a laser light source for generating a light beam, an optical system for causing the light beam to enter the interface between the dielectric block and a metal film at various incident angles, and a light detection unit for detecting a parallelized light beam, which is totally reflected at the interface. Properties are measured while causing a reference molecule, of substantially the same size and the same refractive index as an analysis object molecule, to adhere onto the metal film of the measurement chip. The reference molecule is removed from the metal film, and the position of a dark line is measured while causing the measurement chip to retain a sample. The position of a dark line of the analysis object molecule is detected by calibrating sensitivity based on the detection result of the position of the dark line while causing the reference molecule to adhere onto the metal film.

Abstract: A surface plasmon resonance sensor includes a light source emitting a light beam, a metal film provided on one surface of the dielectric block of a sensor unit, a light beam projecting system which causes the light beam to enter the dielectric block to impinge upon the interface between said one surface of the dielectric block and the metal film so that total internal reflection conditions are satisfied at the interface, and a photodetector which detects the intensity of the light beam reflected in total internal reflection at the interface and detects a state of attenuation in total internal reflection. The relation ?2×10?5?(n3·?n1?n1·?n3)?2×10?5 is satisfied wherein n1 and n3 represent refractive indexes of the solvent of the sample liquid and the dielectric block, and ?n1 and ?n3 represent the rates of temperature-change of the refractive indexes of the solvent of the sample liquid and the dielectric block.

Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser-crystal or optical fiber is excited with a GaN-based compound laser diode.

Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

Abstract: A state of attenuation in total internal reflection is detected by the use of a measuring apparatus having a measuring unit and a reference unit and a measuring system which corrects result of detection by the measuring unit on the basis of result of detection by the reference unit and measures the change of a state of attenuation in total internal reflection on the basis of the corrected result of detection by the measuring unit. The difference in sensitivity between the measuring unit and the reference unit is detected before initiating the measurement of the change of a state of attenuation in total internal reflection, and result of measurement by the measuring system is calibrated on the basis of the difference in sensitivity between the measuring unit and the reference unit.

Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

Abstract: A semiconductor-laser-excited solid-state laser apparatus includes a solid-state laser element and a semiconductor laser unit including a resonator. The solid-state laser element is excited by light emitted from the semiconductor laser unit, and emits laser light. The resonator length in the semiconductor laser unit is arranged to be at least 0.8 mm, so as to reduce an amount of wavelength shift in light emitted from the semiconductor laser unit, and achieve a stable, high-power laser output from the semiconductor-laser-excited solid-state laser apparatus.