Patents by Inventor Hisashi Okuchi
Hisashi Okuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230092237Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first layer including a metal element on a substrate, and processing the first layer by dry etching. The method further includes removing a second layer formed on a lateral face of the first layer by wet etching, after processing the first layer, and forming a first film on the lateral face of the first layer by processing the lateral face of the first layer with a liquid, after removing the second layer. Furthermore, the substrate is not exposed to ambient air, after removing the second layer and before forming the first film.Type: ApplicationFiled: December 9, 2021Publication date: March 23, 2023Applicant: KIOXIA CorporationInventors: Masanori MIZUKOSHI, Hisashi OKUCHI
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Publication number: 20220280969Abstract: In one embodiment, a substrate treatment apparatus includes a mixer configured to mix a first liquid including a metal element and a second liquid being basicity to generate a third liquid including the metal element and being basicity. The apparatus further includes a supplier configured to supply the third liquid to a substrate. The apparatus further includes a first flow path configured to convey the third liquid from the mixer to the supplier not through a filter that removes particles from the third liquid.Type: ApplicationFiled: August 17, 2021Publication date: September 8, 2022Applicant: Kioxia CorporationInventors: Yurika KANNO, Hisashi OKUCHI, Yohei YAMAMOTO
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Patent number: 11342182Abstract: According to an embodiment, the substrate treatment device includes a dilutor configured to dilute a first liquid containing a metal ion and exhibiting acidity. The device further includes a pH changer configured to change a pH of the first liquid before or after being diluted by the dilutor. The device further includes a substrate conditioner configured to treat the substrate using the first liquid, which is diluted by the dilutor and with the pH changed by the pH changer.Type: GrantFiled: September 3, 2019Date of Patent: May 24, 2022Assignee: KIOXIA CORPORATIONInventors: Yasuhito Yoshimizu, Fuyuma Ito, Hakuba Kitagawa, Yohei Yamamoto, Hisashi Okuchi, Yuji Yamada
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Publication number: 20220077183Abstract: In one embodiment, a semiconductor device includes a substrate, and a plurality of electrode layers provided separately from each other in a first direction perpendicular to a surface of the substrate. The device further includes a first insulator, a charge storage layer, a second insulator, a first semiconductor region including silicon, and a second semiconductor region including silicon and carbon, which are provided in order on side faces of the electrode layers, wherein an interface between the first semiconductor region and the second insulator includes fluorine.Type: ApplicationFiled: March 10, 2021Publication date: March 10, 2022Applicant: Kioxia CorporationInventors: Takaumi MORITA, Hisashi OKUCHI, Keiichi SAWA, Hiroyuki YAMASHITA, Toshiaki YANASE, Tsubasa IMAMURA
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Publication number: 20200185221Abstract: According to an embodiment, the substrate treatment device includes a dilutor configured to dilute a first liquid containing a metal ion and exhibiting acidity. The device further includes a pH changer configured to change a pH of the first liquid before or after being diluted by the dilutor. The device further includes a substrate conditioner configured to treat the substrate using the first liquid, which is diluted by the dilutor and with the pH changed by the pH changer.Type: ApplicationFiled: September 3, 2019Publication date: June 11, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Yasuhito YOSHIMIZU, Fuyuma ITO, Hakuba KITAGAWA, Yohei YAMAMOTO, Hisashi OKUCHI, Yuji YAMADA
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Patent number: 10573508Abstract: In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.Type: GrantFiled: August 26, 2015Date of Patent: February 25, 2020Assignee: Toshiba Memory CorporationInventors: Tatsuhiko Koide, Shinsuke Kimura, Yoshihiro Ogawa, Hisashi Okuchi, Hiroshi Tomita
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Patent number: 10529588Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.Type: GrantFiled: June 20, 2018Date of Patent: January 7, 2020Assignee: Toshiba Memory CorporationInventors: Yuya Akeboshi, Hiroshi Tomita, Hisashi Okuchi, Yasuhito Yoshimizu, Hiroaki Yamada
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Patent number: 10522596Abstract: In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.Type: GrantFiled: February 8, 2018Date of Patent: December 31, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Keiichi Sawa, Kazuhisa Matsuda, Atsushi Takahashi, Takaumi Morita, Masayuki Tanaka, Shinji Mori, Kazuhiro Matsuo, Yuta Saito, Kenichiro Toratani, Hisashi Okuchi
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Patent number: 10199240Abstract: A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.Type: GrantFiled: May 29, 2012Date of Patent: February 5, 2019Assignees: Toshiba Memory Corporation, Tokyo Electron LimitedInventors: Hidekazu Hayashi, Yohei Sato, Hisashi Okuchi, Hiroshi Tomita, Kazuyuki Mitsuoka, Mitsuaki Iwashita, Takehiko Orii, Gen You, Hiroki Ohno, Takayuki Toshima
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Publication number: 20190027538Abstract: In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.Type: ApplicationFiled: February 8, 2018Publication date: January 24, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Keiichi Sawa, Kazuhisa Matsuda, Atsushi Takahashi, Takaumi Morita, Masayuki Tanaka, Shinji Mori, Kazuhiro Matsuo, Yuta Saito, Kenichiro Toratani, Hisashi Okuchi
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Publication number: 20180301349Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.Type: ApplicationFiled: June 20, 2018Publication date: October 18, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Yuya AKEBOSHI, Hiroshi Tomita, Hisashi Okuchi, Yasuhito Yoshimizu, Hiroaki Yamada
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Patent number: 10096462Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container.Type: GrantFiled: July 15, 2013Date of Patent: October 9, 2018Assignees: Toshiba Memory Corporation, Tokyo Electron LimitedInventors: Hidekazu Hayashi, Yohei Sato, Hisashi Okuchi, Hiroshi Tomita, Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii, Takayuki Toshima
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Patent number: 10014186Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.Type: GrantFiled: January 6, 2016Date of Patent: July 3, 2018Assignee: Toshiba Memory CorporationInventors: Yuya Akeboshi, Hiroshi Tomita, Hisashi Okuchi, Yasuhito Yoshimizu, Hiroaki Yamada
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Patent number: 9991159Abstract: According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved.Type: GrantFiled: March 3, 2017Date of Patent: June 5, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Fuyuma Ito, Yasuhito Yoshimizu, Yuya Akeboshi, Hisashi Okuchi, Masayuki Kitamura
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Patent number: 9991111Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.Type: GrantFiled: November 30, 2017Date of Patent: June 5, 2018Assignee: Toshiba Memory CorporationInventors: Yoshihiro Ogawa, Tatsuhiko Koide, Shinsuke Kimura, Hisashi Okuchi, Hiroshi Tomita
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Publication number: 20180082893Abstract: According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved.Type: ApplicationFiled: March 3, 2017Publication date: March 22, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Fuyuma ITO, Yasuhito YOSHIMIZU, Yuya AKEBOSHI, Hisashi OKUCHI, Masayuki KITAMURA
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Publication number: 20180082832Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.Type: ApplicationFiled: November 30, 2017Publication date: March 22, 2018Applicant: Toshiba Memory CorporationInventors: Yoshihiro Ogawa, Tatsuhiko Koide, Shinsuke Kimura, Hisashi Okuchi, Hiroshi Tomita
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Patent number: 9859111Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.Type: GrantFiled: October 28, 2015Date of Patent: January 2, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Yoshihiro Ogawa, Tatsuhiko Koide, Shinsuke Kimura, Hisashi Okuchi, Hiroshi Tomita
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Patent number: 9673217Abstract: According to one embodiment, a semiconductor device includes a stacked body, a semiconductor body, and a stacked film. The stacked body includes a plurality of tungsten layers and a plurality of alloy layers of tungsten and molybdenum. At least portions of the tungsten layers are stacked with an air gap interposed. The alloy layers are provided on surfaces of the tungsten layers opposing the air gap. The semiconductor body extends in a stacking direction through the stacked body. The stacked film is provided between the semiconductor body and the tungsten layers. The stacked film includes a charge storage portion.Type: GrantFiled: September 7, 2016Date of Patent: June 6, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Atsuko Sakata, Yohei Sato, Yasuhito Yoshimizu, Satoshi Wakatsuki, Takeshi Ishizaki, Masayuki Kitamura, Daisuke Ikeno, Tomotaka Ariga, Junichi Wada, Hiroshi Tomita, Hisashi Okuchi, Ryohei Kitao, Toshiyuki Sasaki, Kazuhito Furumoto
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Patent number: 9583330Abstract: A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.Type: GrantFiled: May 21, 2014Date of Patent: February 28, 2017Assignee: Tokyo Electron LimitedInventors: Linan Ji, Hidekazu Hayashi, Hiroshi Tomita, Hisashi Okuchi, Yohei Sato, Takayuki Toshima, Mitsuaki Iwashita, Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii