Patents by Inventor Hisashi Osaki

Hisashi Osaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6743343
    Abstract: A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.
    Type: Grant
    Filed: July 10, 2002
    Date of Patent: June 1, 2004
    Assignee: Asahi Glass Ceramics Co., Ltd.
    Inventors: Otojiro Kida, Akira Mitsui, Eri Suzuki, Hisashi Osaki, Atsushi Hayashi
  • Publication number: 20030000828
    Abstract: A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.
    Type: Application
    Filed: July 10, 2002
    Publication date: January 2, 2003
    Applicant: ASAHI GLASS COMPANY LTD.
    Inventors: Otojiro Kida, Akira Mitsui, Eri Suzuki, Hisashi Osaki, Atsushi Hayashi
  • Patent number: 6468403
    Abstract: A method for producing a transparent conductive film composed mainly of an oxide by sputtering using a sputtering target capable of forming a transparent conductive film, wherein intermittent electric power is supplied to the target.
    Type: Grant
    Filed: July 28, 1994
    Date of Patent: October 22, 2002
    Assignee: Asahi Glass Company Ltd.
    Inventors: Junichi Shimizu, Shujiro Watanabe, Satoru Takaki, Hisashi Osaki, Takuji Oyama, Eiichi Ando
  • Patent number: 6440278
    Abstract: A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: August 27, 2002
    Assignee: Asahi Glass Company Ltd.
    Inventors: Otojiro Kida, Akira Mitsui, Eri Suzuki, Hisashi Osaki, Atsushi Hayashi
  • Publication number: 20020027817
    Abstract: A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.
    Type: Application
    Filed: September 28, 2001
    Publication date: March 7, 2002
    Applicant: Asahi Glass Company Ltd.
    Inventors: Otojiro Kida, Akira Mitsui, Eri Suzuki, Hisashi Osaki, Atsushi Hayashi, Takuji Oyama, Kenichi Sasaki
  • Patent number: 6334938
    Abstract: A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.
    Type: Grant
    Filed: December 5, 2000
    Date of Patent: January 1, 2002
    Assignee: Asahi Glass Company, Ltd.
    Inventors: Otojiro Kida, Akira Mitsui, Eri Suzuki, Hisashi Osaki, Atsushi Hayashi, Takuji Oyama, Kenichi Sasaki
  • Publication number: 20010020586
    Abstract: A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.
    Type: Application
    Filed: December 5, 2000
    Publication date: September 13, 2001
    Applicant: Asahi Glass Company, Ltd.
    Inventors: Otojiro Kida, Akira Mitsui, Eri Suzuki, Hisashi Osaki, Atsushi Hayashi, Takuji Oyama, Kenichi Sasaki
  • Patent number: 6193856
    Abstract: A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.
    Type: Grant
    Filed: March 12, 1998
    Date of Patent: February 27, 2001
    Assignee: Asahi Glass Company Ltd.
    Inventors: Otojiro Kida, Akira Mitsui, Eri Suzuki, Hisashi Osaki, Atsushi Hayashi
  • Patent number: 6110328
    Abstract: A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.
    Type: Grant
    Filed: December 5, 1996
    Date of Patent: August 29, 2000
    Assignee: Asahi Glass Company Ltd.
    Inventors: Junichi Shimizu, Shujiro Watanabe, Satoru Takaki, Hisashi Osaki, Takuji Oyama, Eiichi Ando
  • Patent number: 5660700
    Abstract: A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.
    Type: Grant
    Filed: July 28, 1994
    Date of Patent: August 26, 1997
    Assignee: Asahi Glass Company Ltd.
    Inventors: Junichi Shimizu, Shujiro Watanabe, Satoru Takaki, Hisashi Osaki, Takuji Oyama, Eiichi Ando