Abstract: An information processing apparatus includes a converting portion having a plurality of electrical conductors to be arranged in mutual separation and a medium arranged so as to mutually connect the plurality of electrical conductors, wherein the converting portion is the information processing apparatus to convert an input signal to an output signal. The medium includes the electrolyte and is configured to be capable of controlling an electrical conductivity of an electrically conductive path mutually electrically connecting the plurality of electrical conductors, and the medium is selected such that the electrical conductivity of the electrically conductive path changes over time with the input signal not being present.

Abstract: A gas sensor includes: a gas-sensitive body layer disposed above a substrate and including a metal oxide layer; a first electrode on the gas-sensitive body layer; and a second electrode on the gas-sensitive body layer, being apart from the first electrode by a gap. The gas-sensitive body layer has a resistance change characteristic that reversibly transitions to a high-resistance state and a low-resistance state on basis of a voltage applied across the first electrode and the second electrode. At least a part of the gas-sensitive body layer is exposed to the gap. The gas-sensitive body layer has a resistance that decreases when gas containing a hydrogen atom is in contact with the second electrode.

Abstract: A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.

Abstract: An information processing device, including a resistive analog neuromorphic device element having a pair of electrodes and an oxide layer provided between the pair of electrodes, and a parallel circuit having a low resistance component and a capacitance component. The parallel circuit and the resistive analog neuromorphic device element are connected in series.

Abstract: A device can include a processor; memory accessible to the processor; a housing assembly that includes a display and a tray recess; and an ear bud tray disposed in the tray recess.

Abstract: A conductive bridge memory device includes a memory cell including a first metal layer; a second metal layer; a first insulator layer having a first surface facing the first metal layer and a second surface facing the second metal layer and being a surface opposite to the first surface, and having a through hole penetrating between the first surface and the second surface; and a liquid layer being formed of liquid containing a liquid electrolyte impregnated in the through hole.

Abstract: A device can include a processor; memory accessible to the processor; a housing assembly that includes a display and a tray recess; and an ear bud tray disposed in the tray recess.

Abstract: A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.

Abstract: A gas sensor includes: a gas-sensitive body layer disposed above a substrate and including a metal oxide layer; a first electrode on the gas-sensitive body layer; and a second electrode on the gas-sensitive body layer, being apart from the first electrode by a gap. The gas-sensitive body layer has a resistance change characteristic that reversibly transitions to a high-resistance state and a low-resistance state on basis of a voltage applied across the first electrode and the second electrode. At least a part of the gas-sensitive body layer is exposed to the gap. The gas-sensitive body layer has a resistance that decreases when gas containing a hydrogen atom is in contact with the second electrode.

Abstract: Some embodiments of the present invention include a portable tablet folio stand that is designed for use in multiple modes. The stand can allow a user to view the tablet from multiple angles, such as a movie viewing angle and a working angle. In the movie viewing angle, the tablet is optimally positioned for viewing the tablet screen, for instance to watch videos. In the working angle, the tablet is optimally positioned for performing tasks such as typing on the tablet. In some embodiments, the tablet stand can be configured to be portable and detachably coupled to a keyboard.

Abstract: Some embodiments of the present invention include a portable tablet folio stand that is designed for use in multiple modes. The stand can allow a user to view the tablet from multiple angles, such as a movie viewing angle and a working angle. In the movie viewing angle, the tablet is optimally positioned for viewing the tablet screen, for instance to watch videos. In the working angle, the tablet is optimally positioned for performing tasks such as typing on the tablet. In some embodiments, the tablet stand can be configured to be portable and detachably coupled to a keyboard.

Abstract: The present invention provides a rectifier element that has a titanium oxide layer interposed between first and second electrodes containing a transition metal with an electronegativity larger than that of Ti, wherein, in the titanium oxide layer, only the interface on the side facing any one of the electrodes has a stoichiometric composition, and wherein the average composition of the whole layer is represented by the formula TiOx (wherein x satisfies the relationship 1.6?x<2), and wherein the rectifying characteristics can be reversed by applying a reverse electrical signal that exceeds the critical reverse electric power between the first and second electrodes in an opposite direction. The present invention also provides a process for producing a rectifier element, which includes the steps of depositing a first electrode that contains a transition metal with an electronegativity larger than that of Ti on a substrate; depositing a layer of titanium oxide (TiOx, wherein x satisfies the relationship 1.

Abstract: Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.

Abstract: Embodiments of the invention provide an electronic device, such as a laptop PC, with a keyboard having specialized keys. The specialized keys according to embodiments of the invention are chamfer-less, configured with a larger, “D” shaped striking surface having a concavity therein.

Abstract: Embodiments of the invention provide an electronic device, such as a laptop PC, with a keyboard having specialized keys. The specialized keys according to embodiments of the invention are chamfer-less, configured with a larger, “D” shaped striking surface having a concavity therein.

Abstract: The present invention provides switching elements having a readout margin suitable for data storage units of nonvolatile memories, which are obtained by improving the resistance ratio of metal oxide thin films having reversible variable resistance properties. The present invention provides switching elements having a metal oxide consisting of a transition metal and oxygen formed between a first electrode and a second electrode, by modifying one or more of the crystal structure, ionic valence number of metal element, and nonstoichiometricity of a stoichiometric compound consisted of the transition metal and oxygen. The present invention also provides methods for producing switching elements having reversible variable resistance characteristics due to electric power application history.

Abstract: The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.

Abstract: The present invention provides a rectifier element that has a titanium oxide layer interposed between first and second electrodes containing a transition metal with an electronegativity larger than that of Ti, wherein, in the titanium oxide layer, only the interface on the side facing any one of the electrodes has a stoichiometric composition, and wherein the average composition of the whole layer is represented by the formula TiOx (wherein x satisfies the relationship 1.6?x<2), and wherein the rectifying characteristics can be reversed by applying a reverse electrical signal that exceeds the critical reverse electric power between the first and second electrodes in an opposite direction. The present invention also provides a process for producing a rectifier element, which includes the steps of depositing a first electrode that contains a transition metal with an electronegativity larger than that of Ti on a substrate; depositing a layer of titanium oxide (TiOx, wherein x satisfies the relationship 1.

Abstract: Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.