Abstract: A semiconductor device includes a normally-on junction FET having a first gate electrode, a first source electrode and a first drain electrode, a normally-off MOSFET having a second gate electrode, a second source electrode and a second drain electrode, and a voltage applying unit which applies a voltage to the first gate electrode. The first source electrode of the junction FET is electrically connected to the second drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series, and the voltage applying unit applies a second voltage with a polarity opposite to that of a first voltage applied to the first gate electrode when the junction FET is brought into an off-state, to the first gate electrode when the MOSFET is in an on-state.

Abstract: A semiconductor device includes a normally-on junction FET having a first gate electrode, a first source electrode and a first drain electrode, a normally-off MOSFET having a second gate electrode, a second source electrode and a second drain electrode, and a voltage applying unit which applies a voltage to the first gate electrode. The first source electrode of the junction FET is electrically connected to the second drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series, and the voltage applying unit applies a second voltage with a polarity opposite to that of a first voltage applied to the first gate electrode when the junction FET is brought into an off-state, to the first gate electrode when the MOSFET is in an on-state.

Abstract: A semiconductor device includes a normally-on junction FET having a gate electrode, a source electrode and a drain electrode and a normally-off MOSFET having a gate electrode, a source electrode and a drain electrode. The source electrode of the junction FET is electrically connected to the drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series. The gate electrode of the junction FET is electrically connected to the gate electrode of the MOSFET.

Abstract: A semiconductor device includes a normally-on junction FET having a gate electrode, a source electrode and a drain electrode and a normally-off MOSFET having a gate electrode, a source electrode and a drain electrode. The source electrode of the junction FET is electrically connected to the drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series. The gate electrode of the junction FET is electrically connected to the gate electrode of the MOSFET.

Abstract: Contact resistance between a SiC substrate and an electrode is decreased. When a silicide layer is analyzed by Auger Electron Spectroscopy (AES) sputter in a direction from a titanium layer side to a SiC substrate side, sputtering time corresponding to a depth profile of the silicide layer is defined as ts. In this case, a depth profile of the silicide layer from the titanium layer side in a range of sputtering time from 0.4ts to ts contains a region where titanium atoms determined by the AES sputter accounts for 5 at % or more of all atoms determined by the AES sputter.

Abstract: The present invention provides a technology that makes it possible to enhance the gain and the efficiency of an RF bipolar transistor. Device isolation is given between a p+ type isolation region and an n+ type collector embedded region and between a p+ type isolation region and an n type collector region (an n+ type collector extraction region) with an isolation section that surrounds the collector extraction region in a plan view and is formed by embedding a dielectric film in a groove penetrating an isolation section, a collector region, and a collector embedded region and reaching a substrate. Further, a current route is formed between an emitter wiring (a wiring) and the substrate with an electrically conductive layer formed by embedding the electrically conductive layer in a groove penetrating a dielectric film, silicon oxide films, a semiconductor region, and the isolation regions and reaching the substrate, and thereby the impedance between the emitter wiring and the substrate is reduced.

Abstract: The present invention provides a technology that makes it possible to enhance the gain and the efficiency of an RF bipolar transistor. Device isolation is given between a p+ type isolation region and an n+ type collector embedded region and between a p+ type isolation region and an n type collector region (an n+ type collector extraction region) with an isolation section that surrounds the collector extraction region in a plan view and is formed by embedding a dielectric film in a groove penetrating an isolation section, a collector region, and a collector embedded region and reaching a substrate. Further, a current route is formed between an emitter wiring (a wiring) and the substrate with an electrically conductive layer formed by embedding the electrically conductive layer in a groove penetrating a dielectric film, silicon oxide films, a semiconductor region, and the isolation regions and reaching the substrate, and thereby the impedance between the emitter wiring and the substrate is reduced.

Abstract: The present invention provides a technology that makes it possible to enhance the gain and the efficiency of an RF bipolar transistor. Device isolation is given between a p+ type isolation region and an n+ type collector embedded region and between a p+ type isolation region and an n type collector region (an n+ type collector extraction region) with an isolation section that surrounds the collector extraction region in a plan view and is formed by embedding a dielectric film in a groove penetrating an isolation section, a collector region, and a collector embedded region and reaching a substrate. Further, a current route is formed between an emitter wiring (a wiring) and the substrate with an electrically conductive layer formed by embedding the electrically conductive layer in a groove penetrating a dielectric film, silicon oxide films, a semiconductor region, and the isolation regions and reaching the substrate, and thereby the impedance between the emitter wiring and the substrate is reduced.

Abstract: The present invention provides a technology that makes it possible to enhance the gain and the efficiency of an RF bipolar transistor. Device isolation is given between a p+ type isolation region and an n+ type collector embedded region and between a p+ type isolation region and an n type collector region (an n+ type collector extraction region) with an isolation section that surrounds the collector extraction region in a plan view and is formed by embedding a dielectric film in a groove penetrating an isolation section, a collector region, and a collector embedded region and reaching a substrate. Further, a current route is formed between an emitter wiring (a wiring) and the substrate with an electrically conductive layer formed by embedding the electrically conductive layer in a groove penetrating a dielectric film, silicon oxide films, a semiconductor region, and the isolation regions and reaching the substrate, and thereby the impedance between the emitter wiring and the substrate is reduced.

Abstract: A bipolar transistor for communication apparatus having improved power gain and high frequency output characteristics is described. The bipolar transistor includes an outer base layer connecting an intrinsic base region with a base electrode, with a planar shape thereof being in a U form. The long sides of the collector electrode and an emitter electrode are disposed parallel to each other within a plane parallel to a main surface of a substrate, and plural collector electrodes and plural emitter electrodes are alternately arranged. On the other hand, the base electrode is set outside a line connecting the collector electrode and the emitter electrode at one end thereof, and the long side of the base electrode is so disposed as to intersect at right angles with the respectively long sides of the collector electrode and the emitter electrode.

Abstract: A communication apparatus for an exchange network having a service of notifying the telephone number of a caller during a call-receiving operation can recognize respective callers of past call-receiving operations. During a call-receiving operation, a communication partner's telephone number detection unit detects the telephone number (identification information) of the caller, and stores the detected telephone number in a nonvolatile RAM (random access memory). The RAM can store a plurality of sets of identification information, which are recorded and output in the form of a list by a recording unit.

Abstract: A card interface or the like having compatibility is employed for connecting a communication module or the like for transmitting and/or receiving data. The communication module is changed so as to realize a variety of functions without enlargement of the size of the apparatus. The connection has compatibility so that a function module for adding and/or changing functions is employed in addition to the communication module. Therefore, the function can be improved without the cost rising.

Abstract: In a facsimile apparatus which communicates data through a communication line, a transmission level can be changed manually or in accordance with a type of the communication line or a type of an external unit as discriminated.

Abstract: A communication apparatus for an exchange network having a service of notifying the telephone number of a caller during a call-receiving operation can recognize respective callers of past call-receiving operations. During a call-receiving operation, a communication partner's telephone number detection unit detects the telephone number (identification information) of the caller, and stores the detected telephone number in a nonvolatile RAM (random access memory). The RAM can store a plurality of sets of identification information, which are recorded and output in the form of a list by a recording unit.

Abstract: A communication apparatus for an exchange network having a service of notifying the telephone number of a caller during a call-receiving operation can recognize respective callers of past call-receiving operations. During a call-receiving operation, a communication partner's telephone number detection unit detects the telephone number (identification information) of the caller, and stores the detected telephone number in a nonvolatile RAM (random access memory). The RAM can store a plurality of sets of identification information, which are recorded and output in the form of a list by a recording unit.

Abstract: A program for externally controlling a communicating apparatus is provided. The program controls the communication apparatus externally by conducting mutual communication between the communication apparatus and an apparatus in which the program is executed, by means of a command and a response in reply to the command.

Abstract: A card interface or the like having compatibility is employed for connecting a communication module or the like for transmitting and/or receiving data. The communication module is changed so as to realize a variety of functions without enlargement of the size of the apparatus. The connection has compatibility so that a function module for adding and/or changing functions is employed in addition to the communication module. Therefore, the function can be improved without the cost rising.

Abstract: A portable facsimile apparatus in which, each recording paper (or each document to be transmitted) may be set in place by a manual operation. In a case where the portable facsimile apparatus needs additional recording paper (or an additional document) to be set by an operator during image reception or image transmission, the portable facsimile apparatus so informs the operator, while the apparatus delays shifting following image reception or image transmission. As a result, the operator can set additional recording paper (or an additional document) into the portable facsimile apparatus, during image reception, without terminating the image reception.

Abstract: A communication apparatus includes contacts for exchanging various data between a FAX terminal and a radio terminal having a display function to connect the FAX terminal and the radio terminal to cause the FAX terminal and the radio terminal to exchange necessary data therebetween, wherein display data is transferred from the FAX terminal to the radio terminal having the display function and is displayed on the radio terminal.

Abstract: In a portable facsimile apparatus according to this invention, each recording paper (or each document to be transmitted) may be set in place by manual operation. In a case where the portable facsimile apparatus needs additional recording paper (or an additional document) to be set by an operator during image reception or image transmission, the portable facsimile apparatus so informs the operator, while the apparatus delays shifting following image reception or image transmission. As a result, the operator can set additional recording paper (or an additional document) into the portable facsimile apparatus, during image reception, without terminating the image reception.