Abstract: Provided is a solar cell including a photoelectric conversion section having a first principal surface and a second principal surface, and a collecting electrode formed on the first principal surface of photoelectric conversion section. The photoelectric conversion section includes a semiconductor-stacked portion including a semiconductor junction, a first electrode layer which is a transparent electrode layer formed on the first principal surface side of the semiconductor-stacked portion, and a second electrode layer formed on the second principal surface side of the semiconductor-stacked portion. The collecting electrode includes a first electroconductive layer and a second electroconductive layer. In the manufacturing method, an insulating layer is formed on the first electrode layer, and the electrode layer exposed to the surface of the insulating layer-non-formed region is removed to eliminate a short circuit between the first and second electrode layers.

Abstract: Provided is a solar cell including a photoelectric conversion section having a first principal surface and a second principal surface, and a collecting electrode formed on the first principal surface of photoelectric conversion section. The photoelectric conversion section includes a semiconductor-stacked portion including a semiconductor junction, a first electrode layer which is a transparent electrode layer formed on the first principal surface side of the semiconductor-stacked portion, and a second electrode layer formed on the second principal surface side of the semiconductor-stacked portion. The collecting electrode includes a first electroconductive layer and a second electroconductive layer. In the manufacturing method, an insulating layer is formed on the first electrode layer, and the electrode layer exposed to the surface of the insulating layer-non-formed region is removed to eliminate a short circuit between the first and second electrode layers.

Abstract: A method for manufacturing a crystalline silicon-based solar cell having a photoelectric conversion section includes a silicon-based layer of an opposite conductivity-type on a first principal surface side of a crystalline silicon substrate of a first conductivity-type, and a collecting electrode formed by an electroplating method on a first principal surface of the photoelectric conversion section. By applying laser light from a first or second principal surface side of the photoelectric conversion section, an insulation-processed region his formed where a short-circuit between the first principal surface and a second principal surface of the photoelectric conversion section is eliminated. On the collecting electrode and/or the insulation-processed region, a protecting layer s formed for preventing diffusion of a metal, which is contained in the collecting electrode into the substrate.

Abstract: An electrode layer formation step of forming an electrode layer including the first electrode and a removal-target body on a first main surface side of a photoelectric conversion part; an insulating layer formation step of forming an insulating layer so as to cover at least the removal-target body; an opening formation step of forming an opening in the insulating layer by utilizing the removal-target body; and a metal layer formation step of forming a metal layer on the electrode layer through the opening of the insulating layer by a plating method are performed in this order. In the opening formation step, at least a part of the removal-target body is removed by irradiation by a laser beam, so that the opening of the insulating layer is formed.

Abstract: A method for producing a crystalline silicon solar cell with a high conversion efficiency and a precisely machined light-incident surface is provided, including a step of forming a first transparent electrode layer, a step of forming a back electrode layer containing copper as a major ingredient on a substantially entire area of a surface of a second main surface side, and the subsequent insulating step of forming an insulating region to remove a short circuit between at least the first transparent electrode layer of the first main surface side and at least a second transparent electrode layer and the back electrode layer of the second main surface side, irradiating an entire periphery of an outer peripheral part of the first main surface onto a position within 3 mm from an outer peripheral end face of a one conductivity-type single crystalline silicon substrate from the first main surface side.