Patents by Inventor Hisashi Yoshino

Hisashi Yoshino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7160820
    Abstract: There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.
    Type: Grant
    Filed: May 15, 2002
    Date of Patent: January 9, 2007
    Assignees: International Superconductivity Technology Center, the Juridical Foundation, Fujikura Ltd.
    Inventors: Toshihiro Suga, Yasuji Yamada, Toshihiko Maeda, Seok Beom Kim, Haruhiko Kurosaki, Yutaka Yamada, Izumi Hirabayashi, Yasuhiro Iijima, Tomonori Watanabe, Hisashi Yoshino, Koji Muranaka
  • Publication number: 20040214450
    Abstract: There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.
    Type: Application
    Filed: June 7, 2004
    Publication date: October 28, 2004
    Inventors: Toshihiro Suga, Yasuji Yamada, Toshihiko Maeda, Seok Beom Kim, Haruhiko Kurosaki, Yutaka Yamada, Izumi Hirabayashi, Yasuhiro Iijima, Tomonori Watanabe, Hisashi Yoshino, Koji Muranaka
  • Patent number: 6532377
    Abstract: There is disclosed a planar filter which can variably control a pass frequency band with a high precision and which is superior in skirt property and little in ripple. A planar filter member and tuning member are disposed opposite to each other via a predetermined gap. The filter member is structured in such a manner that an input/output portion formed of a superconductor and a plurality of resonance elements are formed on a substrate. The tuning member is structured in such a manner that on the surface of a magnetic plate with a permeability changing by an applied magnetic field, a plurality of dielectric thin films, and a plurality of electrodes for applying electric fields to the dielectric thin films are arranged. Each of the dielectric thin films is disposed in a position opposite to a gap between the resonance elements of the filter member, or a gap between the filter member and the input/output portion.
    Type: Grant
    Filed: September 1, 2000
    Date of Patent: March 11, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshiaki Terashima, Hiroyuki Fuke, Hiroyuki Kayano, Hisashi Yoshino
  • Patent number: 6349226
    Abstract: An oxide superconductive wire having practically sufficient tensile strength and superconductive properties is claimed. A first aspect of the present invention includes a first metallic layer made of a silver based alloy containing a metal selected from the group consisting of copper, antimony, tin, germanium, gallium, indium, zinc, platinum and palladium; a second metallic layer having a tensile strength higher than that of silver and fixed to the first metallic layer; and an oxide superconductor layer formed on the first metallic layer. Another aspect of the present invention provides an oxide superconductive wire having first and a second layers and an oxide superconductive wire. The first metallic layer is made of silver and oriented along crystallographic (210) plane. The second metallic layer has a tensile strength higher than that of silver and is fixed to the first metallic layer. The present invention also provides a superconductive device using each of the oxide superconductive wires.
    Type: Grant
    Filed: February 8, 2000
    Date of Patent: February 19, 2002
    Assignee: Kabuhsiki Kaisha Toshiba
    Inventors: Hisashi Yoshino, Mutsuki Yamazaki
  • Patent number: 6170147
    Abstract: A starting material which is converted to a continuous body of an oxide superconductor by a heat treatment is filled in a tubular Ag sheath member. The diameter of the filled member is reduced by extrusion to form a wire. The wire is subjected to a heat treatment so that the starting material inside the sheath member is converted to a continuous body of an oxide superconductor. A superconducting wire constituted by the sheath member and the oxide superconductor filled inside the sheath member is obtained. A superconducting coil can be obtained by winding the superconducting wire.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: January 9, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yutaka Yamada, Satoru Murase, Hisashi Yoshino, Noburu Fukushima, Hiromi Niu, Shigeo Nakayama, Misao Koizumi
  • Patent number: 5965494
    Abstract: A first electrically conductive layer whose thickness is equal to or smaller than the skin depth of the radio wave used for communication, a dielectric layer whose permittivity is changed by application of electric field, and a second electrically conductive layer whose thickness is equal to or smaller than the skin depth of the radio wave used for communication are sequentially stacked near a resonance element which is formed on the front surface of a dielectric substrate having a ground layer formed on the rear surface thereof. The effective permittivity of the dielectric layer is changed in a wide range by changing a voltage applied between the first and second electrically conductive layers to change the electric field applied to the dielectric layer. As a result, the impedance of the resonance element is changed, and when a plurality of resonance elements are arranged closely to each other to construct a filter, the coupling degree between the resonance elements is changed.
    Type: Grant
    Filed: May 24, 1996
    Date of Patent: October 12, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshiaki Terashima, Hisashi Yoshino, Hiroyuki Kayano, Tadahiko Maeda
  • Patent number: 5935911
    Abstract: A starting material which is converted to a continuous body of an oxide superconductor by a heat treatment is filled in a tubular Ag sheath member. The diameter of the filled member is reduced by extrusion to form a wire. The wire is subjected to a heat treatment so that the starting material inside the sheath member is converted to a continuous body of an oxide superconductor. A superconducting wire constituted by the sheath member and the oxide superconductor filled inside the sheath member is obtained. A superconducting coil can be obtained by winding the superconducting wire.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: August 10, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yutaka Yamada, Satoru Murase, Hisashi Yoshino, Noburu Fukushima, Hiromi Niu, Shigeo Nakayama, Misao Koizumi
  • Patent number: 5374610
    Abstract: An insulating composition consisting of Bi, Sr, RE, Cu, O or of Tl, Ba, RE, Cu, O (wherein; RE is an element selected from a group consisting of Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y) aligns properly with a crystal face of an oxide superconductor because its crystal structure is the same as or similar to that of the oxide superconductor. An insulating composition in which a part of Bi is replaced by Pb is further near the oxide superconductor its construction, and the modulation structure in this insulating composition is mitigated or disappears.
    Type: Grant
    Filed: May 8, 1991
    Date of Patent: December 20, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Noburu Fukushima, Shunji Nomura, Hisashi Yoshino, Ken Ando, Hiromi Niu, Tomohisa Yamashita
  • Patent number: 5034359
    Abstract: An insulating composition consisting of Bi, Sr, RE, Cu, O or of Tl, Ba, RE, Cu, O (wherein; RE is an element selected from a group consisting of Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y) aligns properly with a crystal face of an oxide superconductor because its crystal structure is the same as or similar to that of the oxide superconductor. An insulating composition in which a part of Bi is replaced by Pb is further near the oxide superconductor its construction, and the modulation structure in this insulating composition is mitigated or disappears.
    Type: Grant
    Filed: April 7, 1989
    Date of Patent: July 23, 1991
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Noburu Fukushima, Shunji Nomura, Hisashi Yoshino, Ken Ando, Hiromi Niu, Tomohisa Yamashita
  • Patent number: 4937696
    Abstract: A protection circuit for a semiconductor device is disclosed. This circuit is connected in series with a power semiconductor device to be protected, and is comprised of a circuit breaker and current-limiting device. The current-limiting device limits the overcurrent, thereby providing a time allowance until the circuit breaker begins operate.
    Type: Grant
    Filed: May 11, 1989
    Date of Patent: June 26, 1990
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hisashi Yoshino, Noburu Fukushima, Masakatsu Haga, Masachika Iida, Sadaaki Mori
  • Patent number: 4757492
    Abstract: A method for recording and reproducing information on or from an optical recording medium, which comprises:recording information by illuminating light to the optical recording medium which is equipped as a recording film with a thin film comprising dispersed fine grains of a material capable of showing a metal-insulator transition to cause the metal-insulator transition owing to the heating effect of the light; and reproducing the information by utilizing changes in optical characteristics owing to a plasma resonance absorption by the fine grains dispersed in the thin film. The method of this invention permits high-density recording with high sensitivity and upon reproduction, enables reproduction of record with a high signal/noise ratio. The recording medium obtained by this method is an erasable optical recording medium, which permits its reutilization for recording and reproduction after erasure of the previously-stored record.
    Type: Grant
    Filed: December 4, 1985
    Date of Patent: July 12, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Noburu Fukushima, Hisashi Yoshino, Masashi Sahashi, Shuichi Komatsu
  • Patent number: 4642136
    Abstract: A PTC ceramic composition comprising a fundamental component represented by the formula:(V.sub.1-x A.sub.x).sub.2 O.sub.3wherein x is a value within the range of 0.ltoreq.x.ltoreq.0.02 and A is at least one of Cr and Al, and tin in an amount of 1 to 25 % by weight based on the total weight of the composition, has a small electric resistance in the low resistance state, good PTC properties, and a high density.
    Type: Grant
    Filed: February 7, 1985
    Date of Patent: February 10, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Noburu Fukushima, Hisashi Yoshino, Shunji Nomura
  • Patent number: 4615846
    Abstract: A method of manufacturing an amalgam for sealing in a fluorescent lamp consisting of tin, lead, bismuth, indium and mercury is disclosed. In this method, the amalgam is first melted and then discharged through a nozzle to be contacted with a coolant. A fluorescent lamp containing the amalgam manufactured by the above method is also disclosed.
    Type: Grant
    Filed: September 18, 1984
    Date of Patent: October 7, 1986
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hisashi Yoshino, Masakatsu Haga, Takashi Yorifuji, Teruo Oshima
  • Patent number: 4611745
    Abstract: A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 .mu.m comprising silver (Ag) and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper (Cu) optionally, between an aluminium nitride (AlN) substrate and a copper member; and joining said aluminium nitride (AlN) substrate and said copper (Cu) member with each other by heating. A copper wiring sheet comprising the above active layer is also usable in the method.
    Type: Grant
    Filed: January 29, 1985
    Date of Patent: September 16, 1986
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masako Nakahashi, Makoto Shirokane, Tatsuo Yamazaki, Hisashi Yoshino, Akio Hori, Hiromitsu Takeda
  • Patent number: 4381221
    Abstract: In a process for recovering an aliphatic carboxylic acid and/or an ester thereof by distilling a liquid mixture containing the aliphatic carboxylic acid and/or the ester thereof and a catalyst of a metal of Group VIII of the periodic table of elements, the improvement wherein the distillation is carried out in the presence of carbon monoxide at a partial pressure of at least 0.01 kg/cm.sup.2 (absolute) in the distillation system to prevent the decomposition of said catalyst.
    Type: Grant
    Filed: August 14, 1981
    Date of Patent: April 26, 1983
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Tomiya Isshiki, Hisashi Yoshino, Kaoru Tsuyuki
  • Patent number: 4345130
    Abstract: Disclosed is an electrical contact of composite layer type which comprises an interrupting layer consisting of Cu-W alloy, Cu-WC alloy or Cu-W-WC alloy containing 20 to 60 wt % of Cu and being bonded to the top surface of a base plate, and a contacting layer consisting of Ag-WC alloy, Ag-W alloy or Ag-W-WC alloy containing 20 to 60 wt % of Ag and being bonded to the top surface of said interrupting layer.
    Type: Grant
    Filed: December 3, 1980
    Date of Patent: August 17, 1982
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Tsutomu Okutomi, Masachika Iida, Kazuyoshi Kuwabara, Hisashi Yoshino, Eiichi Takayanagi
  • Patent number: 4129761
    Abstract: A vacuum circuit breaker comprising an evacuated envelope and a pair of movable conductive rods within the envelope having points of contact equipped with contact members, wherein the conductive rods slide into and out of engaging contact, the improvement comprising at least one of said contacts having circuit making and breaking contact members formed of an alloy consisting essentially of 9.4 wt% to 15 wt% Al, 4.5 wt% to 20 wt% Ni, 0.1 wt% to 10 wt% of at least one metal (Me) selected from the group consisting of bismuth, tellurium, selenium, antimony and magnesium with copper as the balance of the alloy, wherein said alloy contains an .alpha. copper phase (Cu(.alpha.)) containing nickel and a .gamma. copper phase (Cu(.gamma.)) containing nickel substantially dispersed throughout said alloy.
    Type: Grant
    Filed: May 27, 1977
    Date of Patent: December 12, 1978
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Tsutomu Okutomi, Hisashi Yoshino, Seishi Chiba, Tadahito Tsutsumi, Kouichi Tejima
  • Patent number: 4129760
    Abstract: A vacuum circuit breaker comprising an evacuated envelope and a pair of movable conductive rods within the envelope having points of contact equipped with contact members, wherein the conductive rods slide into and out of engaging contact, the improvement comprising at least one of said contacts having circuit-making and breaking members formed of an alloy consisting essentially of 4 wt% to 9.4 wt% aluminum, 0.5 wt% to 3.5 wt% of beryllium, 0.1 wt% to 10 wt% of Me.sub.1, wherein Me.sub.1 is at least one metal selected from the group consisting of bismuth, tellurium, selenium, antimony, magnesium and lead, and the balance copper.
    Type: Grant
    Filed: May 27, 1977
    Date of Patent: December 12, 1978
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Tsutomu Okutomi, Hisashi Yoshino, Seishi Chiba