Abstract: In a semiconductor device in which a semiconductor chip is stacked on a substrate, an interposer chip having wirings is provided under the semiconductor chip. A bonding pad of the semiconductor chip is electrically connected to a bonding terminal provided on the substrate via the interposer chip by wire bonding. The interposer chip prevents a semiconductor element formed in the semiconductor chip from deteriorating in terms of an electric property and from being physically damaged. Further, the wire bonding strength does not drop. Moreover, it is possible to form a fine wiring pitch for relaying a wire-bonding wire.

Abstract: In a semiconductor device in which a semiconductor chip is stacked on a substrate, an interposer chip having wirings is provided under the semiconductor chip. A bonding pad of the semiconductor chip is electrically connected to a bonding terminal provided on the substrate via the interposer chip by wire bonding. The interposer chip prevents a semiconductor element formed in the semiconductor chip from deteriorating in terms of an electric property and from being physically damaged. Further, the wire bonding strength does not drop. Moreover, it is possible to form a fine wiring pitch for relaying a wire-bonding wire.

Abstract: A semiconductor device comprising: a substrate; first and second interconnection patterns respectively provided on upper and lower surfaces of the substrate; a through-hole electrode extending through the substrate for electrically connecting the first and second interconnection patterns; a semiconductor chip provided on the upper surface of the substrate and electrically connected to the first interconnection pattern; and a resist film covering the second interconnection pattern; the second interconnection pattern comprising a generally round land and a lead interconnection portion extending from the land, the resist film having an opening formed therein for exposing the entire land, the opening having a curved edge surrounding a peripheral edge of the land and a linear edge linearly extending along a boundary between the land and the lead interconnection portion, the exposed land having a solder ball as an external terminal thereon.

Abstract: A semiconductor device comprising: a substrate; first and second interconnection patterns respectively provided on upper and lower surfaces of the substrate; a through-hole electrode extending through the substrate for electrically connecting the first and second interconnection patterns; a semiconductor chip provided on the upper surface of the substrate and electrically connected to the first interconnection pattern; and a resist film covering the second interconnection pattern; the second interconnection pattern comprising a generally round land and a lead interconnection portion extending from the land, the resist film having an opening formed therein for exposing the entire land, the opening having a curved edge surrounding a peripheral edge of the land and a linear edge linearly extending along a boundary between the land and the lead interconnection portion, the exposed land having a solder ball as an external terminal thereon.

Abstract: In a semiconductor device in which a semiconductor chip is stacked on a substrate, an interposer chip having wirings is provided under the semiconductor chip. A bonding pad of the semiconductor chip is electrically connected to a bonding terminal provided on the substrate via the interposer chip by wire bonding. The interposer chip prevents a semiconductor element formed in the semiconductor chip from deteriorating in terms of an electric property and from being physically damaged. Further, the wire bonding strength does not drop. Moreover, it is possible to form a fine wiring pitch for relaying a wire-bonding wire.