Patents by Inventor Hisasi Koyamao

Hisasi Koyamao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Highly-oriented diamond film field-effect transistor
    Patent number: 5491348
    Abstract: A source electrode is formed on the first semiconducting diamond film and a drain electrode is formed on the second semiconducting diamond film. A highly resistant diamond film having a thickness of between 10 .ANG. and 1 mm and an electrical resistance of at least 10.sup.2 .OMEGA..cm or more is placed between the first and second semiconducting diamond films. A gate electrode is formed on the highly resistant diamond film. Thereby, a channel region is formed by these first and second semiconducting diamond films as well as the highly resistant diamond film. All or at least a part of said first and second semiconducting diamond films and the highly resistant diamond film are made of highly-oriented diamond films where either (100) or (111) crystal planes of diamond cover at least 80% of the film surface, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.} which represent the crystal plane orientation, satisfy .vertline..DELTA..alpha..vertline.<10.
    Type: Grant
    Filed: September 28, 1994
    Date of Patent: February 13, 1996
    Assignee: Kobe Steel USA, Inc.
    Inventors: Hisasi Koyamao, Koichi Miyata, Kimitsugu Saito, David L. Dreifus, Brian R. Stoner