Abstract: The present invention relates to a semiconductor light emitting device including: a substrate for element mounting; a wiring provided on the substrate; an LED element provided on the substrate and electrically connected to the wiring; an encapsulating resin layer for encapsulating the LED element; and a wavelength conversion layer which contains a phosphor material and converts a wavelength of light emitted by the LED element, in which the wavelength conversion layer is provided on an upper side of the LED element, and a diffusive reflection resin layer is provided in a state that side faces of the LED element are surrounded therewith, and an area at the LED element face side of the wavelength conversion layer is at least twice larger by area ratio than an area of light emitting area on an upper surface of the LED element.

Abstract: A method for producing an LED device 5 producing an LED device 5 by encapsulating an LED 4 by an encapsulating sheet 1 includes a sheet producing step of producing the encapsulating sheet 1 and an encapsulating step of encapsulating the LED 4 by the encapsulating sheet 1. Time T from producing the encapsulating sheet 1 in the sheet producing step to encapsulating the LED 4 by the encapsulating sheet 1 in the encapsulating step is 24 hours or less.

Abstract: A reflecting resin sheet provides a reflecting resin layer at the side of a light emitting diode element. The reflecting resin sheet includes a release substrate and the reflecting resin layer provided on one surface in a thickness direction of the release substrate. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be capable of being in close contact with the light emitting diode element.

Abstract: A phosphor reflecting sheet provides a phosphor layer on one side in a thickness direction of a light emitting diode element and provides a reflecting resin layer at the side of the light emitting diode element. The phosphor reflecting sheet includes the phosphor layer and the reflecting resin layer provided on one surface in the thickness direction of the phosphor layer. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be disposed in opposed relation to the side surface of the light emitting diode element.

Abstract: A method for producing an optical semiconductor device including a varnish production step of producing a varnish containing particles and a curable resin, a cover layer production step of producing an A-stage cover layer from the varnish, and a covering step of covering the optical semiconductor element with the A-stage covering layer.

Abstract: A reflecting resin sheet provides a reflecting resin layer at the side of a light emitting diode element. The reflecting resin sheet includes a release substrate and the reflecting resin layer provided on one surface in a thickness direction of the release substrate. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be capable of being in close contact with the light emitting diode element.

Abstract: A reflecting resin sheet provides a reflecting resin layer at the side of a light emitting diode element. The reflecting resin sheet includes a release substrate and the reflecting resin layer provided on one surface in a thickness direction of the release substrate. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be capable of being in close contact with the light emitting diode element.

Abstract: A reflecting resin sheet provides a reflecting resin layer at the side of a light emitting diode element. The reflecting resin sheet includes a release substrate and the reflecting resin layer provided on one surface in a thickness direction of the release substrate. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be capable of being in close contact with the light emitting diode element.

Abstract: A method for producing an encapsulating layer-covered optical semiconductor element includes a disposing step of disposing an encapsulating layer at one side in a thickness direction of a support and a covering step of, after the disposing step, covering an optical semiconductor element with the encapsulating layer so as to expose one surface thereof to obtain an encapsulating layer-covered optical semiconductor element.

Abstract: A phosphor layer attaching kit includes a phosphor layer and a silicone pressure-sensitive adhesion composition for attaching the phosphor layer to an optical semiconductor element or an optical semiconductor element package. A percentage of the peel strength of the silicone pressure-sensitive adhesion composition is 30% or more.

Abstract: A light-emitting device includes a circuit board to which external electric power is supplied, a light emitting diode that is electrically connected onto the circuit board and emits light based on electric power from the circuit board, a housing provided on the circuit board so as to surround the light emitting diode and so that the upper end portion of the housing is positioned above the upper end portion of the light emitting diode, and a fluorescent laminate provided on the housing. The fluorescent laminate includes a first fluorescent layer that emits fluorescent light and a second fluorescent layer that emits fluorescent light having a wavelength that is longer than that of the first fluorescent layer. The second fluorescent layer is disposed on the housing and the first fluorescent layer is laminated on the second fluorescent layer.

Abstract: The present invention relates to a composite film including a wavelength conversion layer and a diffusive reflection resin layer in a laminated state and being used in a semiconductor light emitting device, in which the wavelength conversion layer contains a phosphor material which absorbs a part or all of excitation light and is excited to emit visible light in a wavelength region longer than a wavelength of the excitation light, the diffusive reflection resin layer is selectively formed with patterning on one surface of the wavelength conversion layer, and a region on the one surface of the wavelength conversion layer where the diffusive reflection resin layer is not formed with patterning is a path of the excitation light which excites the phosphor material in the wavelength conversion layer.

Abstract: A light-emitting diode element includes an optical semiconductor layer, an electrode unit to be connected to the optical semiconductor layer, and an encapsulating resin layer that encapsulates the optical semiconductor layer and the electrode unit, the encapsulating resin layer containing a light reflection component.

Abstract: A method for producing a light emitting diode device includes the steps of preparing a base board; allowing a light semiconductor layer where an electrode portion is provided at one side in a thickness direction to be disposed in opposed relation to the base board, and the electrode portion to be electrically connected to a terminal, so that the light semiconductor layer is flip-chip mounted on the base board; forming an encapsulating resin layer containing a light reflecting component at the other side of the base board so as to cover the light semiconductor layer and the electrode portion; removing the other side portion of the encapsulating resin layer so as to expose the light semiconductor layer; and forming a phosphor layer formed in a sheet state so as to be in contact with the other surface of the light semiconductor layer.

Abstract: A phosphor layer is composed of a resin in which phosphor particles and light scattering particles are dispersed.

Abstract: A sealing member includes an elongated releasing film, and a plurality of sealing resin layers composed of a sealing resin, the plurality of sealing resin layers being laminated on the releasing film so that the plurality of sealing resin layers are arranged in a row along the longitudinal direction of the releasing film with a space provided therebetween.

Abstract: A method for producing an encapsulating layer-covered optical semiconductor element includes a disposing step of disposing an encapsulating layer at one side in a thickness direction of a support and a covering step of, after the disposing step, covering an optical semiconductor element with the encapsulating layer so as to expose one surface thereof to obtain an encapsulating layer-covered optical semiconductor element.

Abstract: An encapsulating sheet, for encapsulating an optical semiconductor element, includes an embedding layer for embedding the optical semiconductor element and a gas barrier layer provided at one side in a thickness direction of the embedding layer, having a thickness of 50 ?m or more and 1,000 ?m or less, and for suppressing the passing of a gas in the thickness direction.

Abstract: A reflecting material contains a silicone resin composition prepared from a polysiloxane containing silanol groups at both ends, an ethylenic silicon compound, a silicon compound containing an epoxy group, an organohydrogenpolysiloxane, a condensation catalyst, and an addition catalyst; and a light reflecting component.

Abstract: A transfer sheet for a phosphor layer includes a release substrate, a phosphor layer formed on the release substrate, and an adhesive layer formed on the phosphor layer.