Abstract: First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1? of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2? of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.

Abstract: A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r? of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.

Abstract: A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r? of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.

Abstract: First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1? of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2? of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.

Abstract: First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1? of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2? of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.

Abstract: A beam current sensor is composed of a cylindrical super-conductive body having a bridge unit formed on the outer diameter side wherein a beam passes through the inner diameter side. The sensor improves efficiency of creating a magnetic field from a current and can measure a beam current as 1 nA. The bridge unit includes a first coil unit formed so as to have an eddy shape wound counterclockwise from the outer diameter side toward the inner diameter side; a second coil unit formed so as to have an eddy shape wound clockwise from the outer diameter side toward the inner diameter side; and a connection portion for connecting the center position of the inner diameter side of the first coil unit with the center position of the inner diameter side of the second coil.

Abstract: An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.

Abstract: First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1? of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2? of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.

Abstract: A measuring device includes a magnetic shielding part for shielding an outer magnetic field, and a plurality of magnetic field sensors which are arranged in a shielding space which is formed by the magnetic shielding part, wherein the magnetic field sensor includes a plurality of magnetic field collection mechanisms which collect magnetic fields which the beam current to be measured generates, and the magnetic field collection mechanism is a cylindrical structural body which has at least a surface thereof formed of a superconductive body and includes a bridge portion which has only a portion thereof formed of a superconductive body on an outer peripheral portion thereof, and a magnetic field which the beam current to be measured generates is measured by the magnetic field sensors. Due to the arrangement of the plurality of magnetic field sensors, a beam position and a beam current can be detected.

Abstract: A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r? of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.

Abstract: A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.

Abstract: A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.

Abstract: The present invention provides a beam measuring device which can measure a beam current value with high accuracy in a non-destructive manner and, at the same time, can measure a position of a beam. A measuring device includes a magnetic shielding part for shielding an outer magnetic field, and a plurality of magnetic field sensors which are arranged in a shielding space which is formed by the magnetic shielding part, wherein the magnetic field sensor includes a plurality of magnetic field collection mechanisms which collect magnetic fields which the beam current to be measured generates, and the magnetic field collection mechanism is a cylindrical structural body which has at least a surface thereof formed of a superconductive body and includes a bridge portion which has only a portion thereof formed of a superconductive body on an outer peripheral portion thereof, and a magnetic field which the beam current to be measured generates is measured by the magnetic field sensors.

Abstract: A beam current sensor is composed of a cylindrical super-conductive body having a bridge unit formed on the outer diameter side wherein a beam passes through the inner diameter side. The sensor improves efficiency of creating a magnetic field from a current and can measure a beam current as 1 nA. The bridge unit includes a first coil unit formed so as to have an eddy shape wound counterclockwise from the outer diameter side toward the inner diameter side; a second coil unit formed so as to have an eddy shape wound clockwise from the outer diameter side toward the inner diameter side; and a connection portion for connecting the center position of the inner diameter side of the first coil unit with the center position of the inner diameter side of the second coil.

Abstract: An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.

Abstract: A method of plasma doping in which dilution of B2H6 is maximized for enhanced safety and stable plasma generation and sustention can be carried out without lowering of doping efficiency and in which the amount of dopant injected can be easily controlled. In particular, a method of plasma doping characterized in that B2H6 gas is used as a material containing doping impurity while He is used as a substance of high dissociation energy and that the concentration of B2H6 in mixed gas is less than 0.05%.

Abstract: A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.

Abstract: A method of plasma doping in which dilution of B2H6 is maximized for enhanced safety and stable plasma generation and sustention can be carried out without lowering of doping efficiency and in which the amount of dopant injected can be easily controlled. In particular, a method of plasma doping characterized in that B2H6 gas is used as a material containing doping impurity while He is used as a substance of high dissociation energy and that the concentration of B2H6 in mixed gas is less than 0.05%.