Patents by Inventor Hisataka Takenaka

Hisataka Takenaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Laser plasma x-ray generation apparatus
    Patent number: 6625251
    Abstract: An x-ray generation apparatus includes an x-ray reflecting mirror and x-ray generation part. The x-ray reflecting mirror is formed on an inner surface of a concave aspheric surface. The x-ray generation part receives at least one incident energy beam. The x-ray generation part is arranged near a focal point including a focal point of a paraboloid, and the x-ray reflecting mirror has at least one aperture formed in a position except for a part of the concave aspheric surface crossing an axis including the focal point of the concave aspheric surface, and an incident energy beam irradiates the x-ray generation part through the aperture.
    Type: Grant
    Filed: March 18, 2002
    Date of Patent: September 23, 2003
    Assignee: NTT Advanced Technology Corporation
    Inventors: Hisataka Takenaka, Takayasu Mochizuki
  • Laser plasma x-ray generation apparatus
    Publication number: 20020136354
    Abstract: An x-ray generation apparatus includes an x-ray reflecting mirror and x-ray generation part. The x-ray reflecting mirror is formed on an inner surface of a concave aspheric surface. The x-ray generation part receives at least one incident energy beam. The x-ray generation part is arranged near a focal point including a focal point of a paraboloid, and the x-ray reflecting mirror has at lest one aperture formed in a position except for a part of the concave aspheric surface crossing an axis including the focal point of the concave aspheric surface, and an incident energy beam irradiates the x-ray generation part through the aperture.
    Type: Application
    Filed: March 18, 2002
    Publication date: September 26, 2002
    Inventors: Hisataka Takenaka, Takayasu Mochizuki
  • Method of fabrication of Josephson tunnel junction
    Patent number: 4412902
    Abstract: There is disclosed a method of fabrication of a Josephson tunnel junction device. A surface of a base electrode of Nb or Nb compound is subjected to sputter cleaning and then to plasma oxidation in an atmosphere of a diluent gas and oxygen to form thereon an oxide layer serving as a tunnel barrier. A counter electrode is then formed on the oxide layer to provide the Josephson tunnel junction.
    Type: Grant
    Filed: June 18, 1982
    Date of Patent: November 1, 1983
    Assignee: Nippon Telegraph & Telephone Public Corporation
    Inventors: Osamu Michikami, Yujiro Katoh, Keiichi Tanabe, Hisataka Takenaka, Shizuka Yoshii