Patents by Inventor Hisato Shinohara

Hisato Shinohara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5891264
    Abstract: An aluminum film is formed as a photoreflective electrode in the side opposite to the light incident side of a solar cell by sputtering at a substrate temperature of 50.degree. to 200.degree. C. using a target, aluminum containing silicon as an impurity element at 0.1 to 6.0 weight %. An aluminum film or a silver film into which an impurity element is not added is formed on the above aluminum film, to obtain a texture structure having convex and concave shapes. When an organic resin film substrate is used, components (released as a gas by heating and a vacuum atmosphere) such as water within the organic resin film is removed after the aluminum film is formed.
    Type: Grant
    Filed: October 23, 1997
    Date of Patent: April 6, 1999
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisato Shinohara, Hisao Morooka, Izumi Ikeo, Akemi Takenouchi, Setsuo Nakajima, Yasuyuki Arai
  • Patent number: 5821597
    Abstract: A photoelectric conversion device taking the form of a thin film and having a substrate exhibiting poor thermal resistance. The device prevents thermal deformation which would normally be caused by local application of excessive heat to the substrate. The device has output terminals permitting the output from the device to be taken out. The output terminals are formed on the surface of the substrate opposite to the photoelectric conversion device. The device further includes electrical connector portions for electrically connecting the electrodes of the device with the output terminals. The present invention also provides a method of treating a substrate having poor thermal resistance with a plasma with a high throughput. The substrate is continuously supplied into a reaction chamber and treated with a plasma. This supply operation is carried out in such a way that the total length of the substrate existing in a plasma processing region formed by electrodes is longer than the length of the electrodes.
    Type: Grant
    Filed: November 8, 1995
    Date of Patent: October 13, 1998
    Assignees: Semiconductor Energy Laboratory Co., Ltd., TDK Corporation
    Inventors: Setsuo Nakajima, Yasuyuki Arai, Hisato Shinohara, Masayoshi Abe
  • Patent number: 5736431
    Abstract: In producing a thin film solar battery using a semiconductor film producing apparatus, a semiconductor film is formed on a substrate by glow discharge decomposition. The substrate is transported in a desired direction within a glow discharge space. A substrate heating unit heats the substrate at different temperatures along the desired direction in which the substrate is transported. Consequently, a plurality of semiconductor layers having different hydrogen concentrations are laminated at desired thicknesses with desired characteristics. A glow discharge generating unit generates high frequency power having different frequencies and/or different power outputs along the desired direction in which the substrate is transported.
    Type: Grant
    Filed: February 28, 1996
    Date of Patent: April 7, 1998
    Assignees: Semiconductor Energy Laboratory Co., Ltd., TDK Corporation
    Inventors: Hisato Shinohara, Yasuyuki Arai
  • Patent number: 5711824
    Abstract: An aluminum film is formed as a photoreflective electrode at the side opposite to the light incident side of a solar cell by sputtering at a substrate temperature of 50.degree. to 200.degree. C. using a target of aluminum containing silicon as an impurity element at 0.1 to 6.0 weight %. An aluminum film or a silver film in which an impurity element is not added is formed on the above aluminum film, to obtain a texture structure having convex and concave shapes. When an organic resin film substrate is used, components (released as a gas by heating in a vacuum atmosphere) such as water within the organic resin film are removed after the aluminum film is formed.
    Type: Grant
    Filed: December 27, 1995
    Date of Patent: January 27, 1998
    Assignees: Semiconductor Energy Laboratory Co., Ltd., TDK Corporation
    Inventors: Hisato Shinohara, Hisao Morooka, Izumi Ikeo, Akemi Takenouchi, Setsuo Nakajima, Yasuyuki Arai
  • Patent number: 5708252
    Abstract: A method for treating an object with a laser including emitting a laser beam from a laser; expanding the laser beam in a first direction; removing a portion of the laser beam though a mask, the portion including at least edges of the expanded laser beam extending in the first direction; and condensing the laser beam in a second direction orthogonal to the first direction in order to form a line-shaped laser beam on an object.
    Type: Grant
    Filed: January 22, 1996
    Date of Patent: January 13, 1998
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisato Shinohara, Akira Sugawara
  • Patent number: 5091638
    Abstract: An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.
    Type: Grant
    Filed: July 19, 1990
    Date of Patent: February 25, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukada, Mitsunori Sakama, Hisato Shinohara, Nobumitsu Amachi, Naoya Sakamoto, Takashi Inuzima
  • Patent number: 4970366
    Abstract: An improved laser patterning method and apparatus is described. A number of parallel grooves can be formed on a glass substrate coated with an ITO film by projecting flat laser pulses while the substrate is continuously sliding. By this process, the process time for producing a substrate for liquid crystal display can be reduced.
    Type: Grant
    Filed: March 24, 1989
    Date of Patent: November 13, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shinji Imatou, Hisato Shinohara
  • Patent number: 4964704
    Abstract: An improved optical system suitable for laser processing in semiconductor manufacture. The system is composed of three convex lenses. By suitably selecting the type of each of the lenses, a limited spherical aberration is obtained without compromising the numerical aperture.
    Type: Grant
    Filed: August 17, 1989
    Date of Patent: October 23, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hisato Shinohara
  • Patent number: 4959533
    Abstract: An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.
    Type: Grant
    Filed: October 18, 1988
    Date of Patent: September 25, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukada, Mitsunori Sakama, Hisato Shinohara, Nobumitsu Amachi, Naoya Sakamoto, Takashi Inuzima
  • Patent number: 4828668
    Abstract: An improved sputtering system for depositing film on a substrate is disclosed. The system comprises a vacuum chamber, a pair of electrodes with a target inbetween, a cart on which a plurality of substrates are mounted and a transportation mechanism for transporting the cart passing through the deposition space between the electrodes. The substrates are mounted perpendicular to the electric field induced by the pair of electrodes.
    Type: Grant
    Filed: March 9, 1987
    Date of Patent: May 9, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunio Suzuki, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Katsuhiko Shibata, Hisato Shinohara, Masato Susukida
  • Patent number: RE33947
    Abstract: A laser scribing system and method is described. In the system, a film formed on a substrate is irradiated with laser beam which is focused on a limited portion of the film in order to remove the portion and produce a groove. Laser beam used for eliminating the portion of film formed on a substrate is deprived of its border portion in advance of the focusing. Sperical aberration is suppressed due to this elimination.
    Type: Grant
    Filed: November 2, 1990
    Date of Patent: June 2, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hisato Shinohara