Abstract: A silicon micro sensor including a silicon substrate, a support element formed over an etched portion of the silicon substrate and a sensor element formed on the support element wherein the support element has a double layered structure including a silicon oxide film formed on the silicon substrate using the thermal oxidization method and an aluminum oxide film formed on the silicon oxide film using the sputtering method.

Abstract: A thermal flow sensor comprising a substrate which can be etched, an electrical insulating film which is formed on said substrate and which has an etching characteristic different from that of said substrate, a heating resistor which is disposed on said insulating film, and a fluid temperature sensing resistor which is disposed on said insulating film at a certain distance from said heating resistor, the portion of said substrate corresponding to at least one of the heating resistor and the fluid temperature sensing resistor and the vicinity thereof being etched.

Abstract: A moisture sensing element includes a moisture permeable gold electrode film formed on a moisture sensitive polyvinyl alcohol film which is carried by a glass substrate. The moisture permeable gold electrode film is formed by a vacuum evaporation under a nitrogen gas pressure of 1.0.times.10.sup.-3 Torr through 1.0.times.10.sup.-2 Torr. The deposition rate is about 0.5 .ANG./sec., and the moisture permeable gold electrode film has a thickness of 100 .ANG. through 200 .ANG..

Abstract: A moisture-sensitive device comprising a substrate such as silicon substrate, a pair of belt-like heating elements extending over recesses formed in the substrate, the heating elements being composed of a resistive film of platinum or nickel and a heat-resistant insulating film covering the resistive film in which one of the heating elements acts as a detector element and the other as a reference element, which device can exactly determine an absolute humidity irrespective of sudden changes of temperature.

Abstract: A method of making a humidity sensor comprises providing a host device constituted by a semi-conductor substrate (10) and a gate insulator (13) of an insulated gate field effect transistor, forming a layer (14) of poly (vinyl) alcohol (PVA) on the exposed surface of the insulator, heat treating the layer to crystallize and stabilize the PVA, and forming a gate electrode (15) on the PVA layer, so that the gate electrode is porous allowing ambient water vapor to be absorbed by the PVA which, in response, undergoes a change of bulk dielectric constant, thereby causing a change in gate capacitance of the transistor resulting in a detectable change of electrical conductivity in the drain source channel.

Abstract: A method of manufacturing a resistance thermometer which includes the steps of preparing a support substrate and forming a platinum film, which serves as a temperature measuring element, on the support substrate by a sputtering process employing a sputtering gas which contains a predetermined amount of oxygen gas, and a resistance thermometer produced by the method. The method which optionally includes forming an aluminum oxide film, the substrate and the platinum film.

Abstract: A moisture sensor comprising a substrate; a bottom electrode on the substrate; a moisture sensitive film sandwiched between an upper electrode and the bottom electrode on the substrate; a pair of connection terminals one of which is extended on the substrate from the bottom electrode and the other of which is formed on the substrate to be connected to the upper electrode; a step-shaped extension extended on the end of the moisture sensitive film from the upper electrode to the connection terminal for the upper electrode; and a metal film which covers said step-shaped extension.

Abstract: A platinum resistor for the measurement of temperatures having a silicon substrate, an aluminum oxide film formed on said silicon substrate, and a platinum film formed on said aluminum oxide film.

Abstract: A moisture sensor comprising a substrate, a bottom electrode formed on said substrate, a moisture sensitive film formed on said bottom electrode and a moisture permeable electrode formed on said moisture sensitive film, said moisture sensitive film being formed by heat-treating polyvinyl alcohol, thereby exhibiting a moisture sensitive characteristic which has a linear relationship between the impedance and the relative humidity.

Abstract: A moisture sensor comprising a substrate, a moisture sensitive polymer film having hydroxyl groups formed on said substrate, an electrode formed on said moisture sensitive film, and a chemical modification layer disposed between said substrate and said moisture sensitive film, said chemical modification layer having chemical bonding strength to both said substrate and said moisture sensitive film thereby increasing adhesion between said substrate and said moisture sensitive film.

Abstract: A method for production of a moisture sensor comprising forming a moisture sensitive polymer film on a substrate, disposing a patterned masking material on said moisture sensitive polymer film, and etching said moisture sensitive film by means of an oxygen plasma, whereby a desired fine pattern of the moisture sensitive film is formed with fair accuracy and reproducibility.

Abstract: A thin-film moisture sensor includes a moisture sensitive polymer film formed on a bottom electrode which is carried on a substrate, and a moisture permeable upper electrode formed on the polymer film. The moisture permeable upper electrode is made of an indium (In) thin-film. In another form, the moisture permeable upper electrode is made of a two-layered electrode including an indium (In) thin-film and a gold (Au) thin-film formed on the indium (In) thin-film.