Abstract: Proposed are a C-V characteristic measurement system and a method of measuring C-V characteristics that allow for less change in resistivity with time in repeated measurement of a single crystal silicon wafer using a mercury electrode, as compared to those in the related arts. Measurement is conducted with use of a C-V characteristic measurement system including: a mercury probe 30 for putting mercury as an electrode to contact with a single crystal silicon wafer; an LCR meter 40 for forming a depletion layer by supplying a high-frequency wave to the single crystal silicon wafer via the mercury probe 30 to apply a reverse bias voltage to the single crystal silicon wafer while measuring a capacitance of the depletion layer; analysis software for calculating C-V characteristics based on the reverse bias voltage and the capacitance of the depletion layer; and a static electricity removing device 20 for removing static electricity of the single crystal silicon wafer.

Abstract: Proposed are a C-V characteristic measurement system and a method of measuring C-V characteristics that allow for less change in resistivity with time in repeated measurement of a single crystal silicon wafer using a mercury electrode, as compared to those in the related arts. Measurement is conducted with use of a C-V characteristic measurement system including: a mercury probe 30 for putting mercury as an electrode to contact with a single crystal silicon wafer; an LCR meter 40 for forming a depletion layer by supplying a high-frequency wave to the single crystal silicon wafer via the mercury probe 30 to apply a reverse bias voltage to the single crystal silicon wafer while measuring a capacitance of the depletion layer; analysis software for calculating C-V characteristics based on the reverse bias voltage and the capacitance of the depletion layer; and a static electricity removing device 20 for removing static electricity of the single crystal silicon wafer.