Abstract: On an EUV light-reflecting surface of titania-doped quartz glass, an angle (?) included between a straight line connecting an origin (O) at the center of the reflecting surface to a birefringence measurement point (A) and a fast axis of birefringence at the measurement point (A) has an average value of more than 45 degrees. Since fast axes of birefringence are distributed in a concentric fashion, a titania-doped quartz glass substrate having a high flatness is obtainable which is suited for use in the EUV lithography.

Abstract: In a titania-doped quartz glass member having a surface where EUV light of up to 70 nm wavelength is reflected, a refractive index distribution in the surface has only one extreme point within a central 80% region of the member. The titania-doped quartz glass member has a surface with a high level of precision and thus can be formed into an EUV lithography photomask substrate which is improved in flatness and thermal expansion properties.

Abstract: A titania-doped quartz glass suited as an EUV lithographic member is prepared by feeding a silicon-providing reactant gas and a titanium-providing reactant gas through a burner along with hydrogen and oxygen, subjecting the reactant gases to oxidation or flame hydrolysis to form synthetic silica-titania fine particles, depositing the particles on a rotating target, and concurrently melting and vitrifying the deposited particles to grow an ingot of titania-doped quartz glass. The target is retracted such that the growth front of the ingot may be spaced a distance of at least 250 mm from the burner tip.

Abstract: In a titania-doped quartz glass member having a surface where EUV light of up to 70 nm wavelength is reflected, a refractive index distribution in the surface has only one extreme point within a central 80% region of the member. The titania-doped quartz glass member has a surface with a high level of precision and thus can be formed into an EUV lithography photomask substrate which is improved in flatness and thermal expansion properties.

Abstract: A method for manufacturing quartz glass using a main burner having a multi-tube assembly having a center tube, a first enclosure tube surrounding the center tube, a second enclosure tube surrounding the first enclosure tube, a tubular shell surrounding the multi-tube assembly, and a plurality of nozzles disposed within the tubular shell, a double-tube assembly surrounding at least a forward opening of the main burner includes feeding silica-forming compound to the center tube, a combustion-supporting gas to the first enclosure tube and the nozzles, a combustible gas to the second enclosure tube and the tubular shell, and a combustion-supporting gas to the double-tube assembly, forming oxyhydrogen flame for hydrolyzing or decomposing the silica-forming compound to form silica, depositing the silica on the target, and melting and vitrifying the deposited silica into quartz glass.

Abstract: A titania-doped quartz glass which experiences a reduction in OH group concentration of less than or equal to 100 ppm upon heat treatment at 900° C. for 100 hours is suitable as the EUV lithography member.

Abstract: When a synthetic quartz glass substrate is prepared from a synthetic quartz glass block, (I) the block has a hydrogen molecule concentration of 5×1017-1×1019 molecules/cm3, (II) the substrate has a hydrogen molecule concentration of 5×1015-5×1017 molecules/cm3, (III) the substrate has an in-plane variation of its internal transmittance at 193.4 nm which is up to 0.2%, and (IV) the substrate has an internal transmittance of at least 99.6% at 193.4 nm. The synthetic quartz glass substrate has a high transmittance and a uniform transmittance distribution, and is adapted for use with excimer lasers, particularly ArF excimer lasers.

Abstract: A titania and sulfur co-doped quartz glass member is provided. Due to co-doping of titania and sulfur, the quartz glass member undergoes zero expansion at a certain temperature and low thermal expansion over a wide temperature range, and is thus suited for use in a commercial EUV lithography tool. A manufacturing method and an optical member for EUV lithography are also provided.

Abstract: In the nanoimprint lithography, a titania-doped quartz glass having a CTE of ?300 to 300 ppb/° C. between 0° C. and 250° C. and a CTE distribution of up to 100 ppb/° C. at 25° C. is suited for use as nanoimprint molds.

Abstract: In the nanoimprint lithography, titania-doped quartz glass having an internal transmittance distribution of up to 10% at wavelength 365 nm is suited for use as nanoimprint molds.

Abstract: A synthetic quartz glass substrate having (i) an OH concentration of 1-100 ppm and a hydrogen molecule concentration of 1×1016-1×1019 molecules/cm3, (ii) an in-plane variation of its internal transmission at wavelength 193.4 nm which is up to 0.2%, and (iii) an internal transmission of at least 99.6% at wavelength 193.4 nm is suited for use with excimer lasers.

Abstract: Disclosed is a method of producing a synthetic quartz glass for excimer laser by depositing on a target silica particulates obtained by subjecting a silica raw material to vapor-phase hydrolysis or oxidative decomposition in an oxyhydrogen flame in a vacuum sintering furnace to form a porous silica base material, vitrifying the porous silica base material, and subjecting the vitrified material to hot forming, an annealing treatment and a hydrogen doping treatment, wherein the vitrification of the porous silica base material includes: (a) a step of holding a vacuum pressure at or below 20.0 Pa in a temperature range from 400° C., inclusive, to 900° C., exclusive; (b) a step of holding a vacuum pressure at or below 10.0 Pa in a temperature range from 900° C., inclusive, to 1100° C., exclusive; and (c) a step of holding a vacuum pressure at or below 3.0 Pa in a temperature range from 1100° C. to a transparent-vitrification temperature.

Abstract: In a titania-doped quartz glass member having a surface where EUV light of up to 70 nm wavelength is reflected, a refractive index distribution in the surface has only one extreme point within a central 80% region of the member. The titania-doped quartz glass member has a surface with a high level of precision and thus can be formed into an EUV lithography photomask substrate which is improved in flatness and thermal expansion properties.

Abstract: When a synthetic quartz glass substrate is prepared from a synthetic quartz glass block, (I) the block has a hydrogen molecule concentration of 5×1017-1×1019 molecules/cm3, (II) the substrate has a hydrogen molecule concentration of 5×1015-5×1017 molecules/cm3, (III) the substrate has an in-plane variation of its internal transmittance at 193.4 nm which is up to 0.2%, and (IV) the substrate has an internal transmittance of at least 99.6% at 193.4 nm. The synthetic quartz glass substrate has a high transmittance and a uniform transmittance distribution, and is adapted for use with excimer lasers, particularly ArF excimer lasers.

Abstract: In the nanoimprint lithography, a titania-doped quartz glass having a CTE of ?300 to 300 ppb/° C. between 0° C. and 250° C. and a CTE distribution of up to 100 ppb/° C. at 25° C. is suited for use as nanoimprint molds.

Abstract: In the nanoimprint lithography, titania-doped quartz glass having an internal transmittance distribution of up to 10% at wavelength 365 nm is suited for use as nanoimprint molds.

Abstract: A burner for use in the manufacture of quartz glass is provided, which comprises a triple-tube assembly of a center tube for feeding a silane or siloxane compound, an intermediate tube for feeding oxygen, and an outer tube for feeding hydrogen, a first tubular shell surrounding the triple-tube assembly for feeding hydrogen, a plurality of first nozzles disposed within the first tubular shell for feeding oxygen, a second tubular shell surrounding the first tubular shell for feeding hydrogen, and a plurality of second nozzles disposed within the second tubular shell for feeding oxygen. Synthetic quartz glass ingots having high optical homogeneity are produced.

Abstract: A synthetic quartz glass substrate having (i) an OH concentration of 1-100 ppm and a hydrogen molecule concentration of 1×1016-1×1019 molecules/cm3, (ii) an in-plane variation of its internal transmission at wavelength 193.4 nm which is up to 0.2%, and (iii) an internal transmission of at least 99.6% at wavelength 193.4 nm is suited for use with excimer lasers.

Abstract: A synthetic quartz glass ingot is prepared by vapor phase hydrolyzing or oxidatively decomposing a silica feedstock in a flame to form fine particles of silica, depositing the silica particles on a target and melting and vitrifying the particles to form a synthetic quartz glass ingot on the target while the target is moved back and forth. The method further comprises: (i) continuously feeding the silica feedstock at a predetermined rate, (ii) keeping the flame in constant contact with an overall growing face, (iii) cyclically repeating the back and forth movement of the target at a predetermined speed, and (iv) maintaining the shape of the growing ingot unchanged.

Abstract: In a synthetic quartz glass ingot which is produced by vapor phase hydrolyzing or oxidatively decomposing a silica-forming starting compound in an oxyhydrogen flame such that silica growth in a direction occurs at a silica particle deposition and melting face, striae visible when viewed from a direction perpendicular to the silica growth direction are distributed periodically over the silica growth direction. The ingot can be used in the production of optical-grade high-homogeneity synthetic quartz glass elements for excimer laser applications, particularly ArF excimer laser applications, in the production of laser damage-resistant optical elements used with light sources such as excimer lasers, and in the production of UV optical fiber.