Patents by Inventor Hisaya Murakoshi

Hisaya Murakoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11515121
    Abstract: In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit 50 which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit 44 which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: November 29, 2022
    Assignee: Hitachi High-Tech Corporation
    Inventors: Tomohiko Ogata, Hisaya Murakoshi, Masaki Hasegawa, Noriyuki Kaneoka, Katsunori Onuki
  • Patent number: 11107655
    Abstract: In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source, an electron gun control device which applies a first voltage to the charged particle source, a substrate voltage control device which applies a second voltage to a sample, an image forming optical system which includes an imaging lens for imaging charged particles incident from the direction of the sample, a detector which includes a camera for detecting the charged particles, and an image processing device which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: August 31, 2021
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Tomohiko Ogata, Masaki Hasegawa, Katsunori Onuki, Noriyuki Kaneoka, Hisaya Murakoshi
  • Patent number: 11002687
    Abstract: A defect inspection device includes a sample support member, a negative voltage, an imaging element, an ultraviolet light source, a movement stage, and a control device. The control device controls the movement stage such that a portion of a linear part included in the image or a location on an extensional line of the linear part is positioned at a specific location in an irradiated region of the electron beam. The control device also repeats the control of the movement stage until an end of the linear part is positioned within the irradiated region of the electron beam.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: May 11, 2021
    Assignee: Hitachi High-Tech Corporation
    Inventors: Masaki Hasegawa, Katsunori Onuki, Noriyuki Kaneoka, Hisaya Murakoshi, Tomohiko Ogata
  • Patent number: 10923315
    Abstract: A purpose of the present invention is to provide a charged particle beam apparatus that performs apparatus adjustment based on a proper evaluation of a beam. To achieve the abovementioned purpose, with the present invention, proposed is a charged particle beam apparatus comprising: an irradiation optical system including a lens for converging charged particle beams emitted from a charged particle source; and an imaging optical system for imaging the charged particles obtained by irradiating the charged particle beams toward a sample on an imaging element, wherein the charged particle beam apparatus comprises a control apparatus for controlling the lens, and the control apparatus evaluates for each lens condition the size of a specific brightness area obtained by the charged particle beam being made to reach the sample, and selects the lens condition for which the size information fulfills a designated condition.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: February 16, 2021
    Assignee: Hitachi High-Tech Corporation
    Inventors: Masaki Hasegawa, Tomohiko Ogata, Noriyuki Kaneoka, Hisaya Murakoshi, Katsunori Onuki
  • Publication number: 20200292466
    Abstract: The purpose of the present invention is to provide a defect inspection device that can evaluate a defect having a long latent flaw with high precision. A defect inspection device of the present invention is characterized by being provided with: a sample support member that supports a sample irradiated by an electron beam emitted from an electron source; an imaging element at which an image of electrons (mirror electrons) reflected without reaching the sample is formed via a retarding electric field formed on the sample; an ultraviolet light source that emits an ultraviolet light toward the sample; a movement stage that moves the sample support member; and a control device that controls the movement stage.
    Type: Application
    Filed: March 16, 2016
    Publication date: September 17, 2020
    Inventors: Masaki HASEGAWA, Katsunori ONUKI, Noriyuki KANEOKA, Hisaya MURAKOSHI, Tomohiko OGATA
  • Publication number: 20200279714
    Abstract: In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source, an electron gun control device which applies a first voltage to the charged particle source, a substrate voltage control device which applies a second voltage to a sample, an image forming optical system which includes an imaging lens for imaging charged particles incident from the direction of the sample, a detector which includes a camera for detecting the charged particles, and an image processing device which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages.
    Type: Application
    Filed: September 20, 2017
    Publication date: September 3, 2020
    Inventors: Tomohiko OGATA, Masaki HASEGAWA, Katsunori ONUKI, Noriyuki KANEOKA, Hisaya MURAKOSHI
  • Publication number: 20200152415
    Abstract: In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit 50 which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit 44 which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage.
    Type: Application
    Filed: October 22, 2019
    Publication date: May 14, 2020
    Inventors: Tomohiko OGATA, Hisaya MURAKOSHI, Masaki HASEGAWA, Noriyuki KANEOKA, Katsunori ONUKI
  • Patent number: 10522320
    Abstract: The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can be adjusted with high precision. In order to achieve this objective, provided is a charged particle beam device comprising: a first charged particle column which serves as an irradiation optical signal; a deflector that deflects charged particles which have passed through the inside of the first charged particle column toward an object; and a second charged particle column which serves as an imaging optical system.
    Type: Grant
    Filed: March 28, 2016
    Date of Patent: December 31, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Tomohiko Ogata, Masaki Hasegawa, Hisaya Murakoshi, Katsunori Onuki, Noriyuki Kaneoka
  • Publication number: 20190378685
    Abstract: A purpose of the present invention is to provide a charged particle beam apparatus that performs apparatus adjustment based on a proper evaluation of a beam. To achieve the abovementioned purpose, with the present invention, proposed is a charged particle beam apparatus comprising: an irradiation optical system including a lens for converging charged particle beams emitted from a charged particle source; and an imaging optical system for imaging the charged particles obtained by irradiating the charged particle beams toward a sample on an imaging element, wherein the charged particle beam apparatus comprises a control apparatus for controlling the lens, and the control apparatus evaluates for each lens condition the size of a specific brightness area obtained by the charged particle beam being made to reach the sample, and selects the lens condition for which the size information fulfills a designated condition.
    Type: Application
    Filed: March 24, 2017
    Publication date: December 12, 2019
    Inventors: Masaki HASEGAWA, Tomohiko OGATA, Noriyuki KANEOKA, Hisaya MURAKOSHI, Katsunori ONUKI
  • Publication number: 20190108969
    Abstract: The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can be adjusted with high precision. In order to achieve this objective, provided is a charged particle beam device comprising: a first charged particle column which serves as an irradiation optical signal; a deflector that deflects charged particles which have passed through the inside of the first charged particle column toward an object; and a second charged particle column which serves as an imaging optical system.
    Type: Application
    Filed: March 28, 2016
    Publication date: April 11, 2019
    Inventors: Tomohiko OGATA, Masaki HASEGAWA, Hisaya MURAKOSHI, Katsunori ONUKI, Noriyuki KANEOKA
  • Publication number: 20190079025
    Abstract: The purpose of the present invention is to provide a defect inspection device with which it is possible to detect a latent flaw with a high precision or at a high speed. In order to fulfill this purpose, this defect inspection device is provided with: a sample support member that supports a sample irradiated by an electron beam emitted from an electron source; a negative voltage applying power source for forming a retarding electric field in relation to the electron beam that irradiates the sample supported by the sample support member; an imaging element at which an image of electrons reflected without reaching the sample is formed via the retarding electric field; an ultraviolet light source that emits an ultraviolet light toward the sample; and a computation processing device that processes an image generated on the basis of a signal obtained by the imaging element.
    Type: Application
    Filed: March 16, 2016
    Publication date: March 14, 2019
    Inventors: Masaki HASEGAWA, Katsunori ONUKI, Noriyuki KANEOKA, Hisaya MURAKOSHI, Tomohiko OGATA
  • Patent number: 10170273
    Abstract: The purpose of the present invention is to provide a charged particle beam device that exhibits high performance due to the use of vanadium glass coatings, and to provide a method of manufacturing a component for a charged particle beam device. Specifically provided is a charged particle beam device using a vacuum component characterized by comprising a metal container, the interior space of which is evacuated to form a high vacuum, and coating layers formed on the surface on the interior space-side of the metal container, wherein the coating layers are vanadium-containing glass, which is to say an amorphous substance.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: January 1, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takashi Ichimura, Hiroyuki Ito, Shinichi Kato, Hisaya Murakoshi, Tadashi Fujieda, Tatsuya Miyake, Takashi Naitou, Takuya Aoyagi, Kenji Tanimoto
  • Patent number: 10074506
    Abstract: A conventional method to process a tip fails to designate the dimension of the shape of the end of the tip, and so fails to obtain a tip having any desired diameter. Impurities may be attached to the tip. Based on a correlation between the voltage applied or the time during processing of the end of the tip and the diameter of the tip end, the applied voltage is controlled so as to obtain a desired diameter of the tip end for processing of the tip. This allows a sharpened tip made of a tungsten monocrystal thin wire to be manufactured to have any desired diameter in the range of 0.1 ?m or more and 2.0 ?m or less.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: September 11, 2018
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takashi Ichimura, Hisao Nitta, Nobuyuki Sonobe, Boklae Cho, Hisaya Murakoshi
  • Publication number: 20180019096
    Abstract: The purpose of the present invention is to provide a charged particle beam device that exhibits high performance due to the use of vanadium glass coatings, and to provide a method of manufacturing a component for a charged particle beam device. Specifically provided is a charged particle beam device using a vacuum component characterized by comprising a metal container, the interior space of which is evacuated to form a high vacuum, and coating layers formed on the surface on the interior space-side of the metal container, wherein the coating layers are vanadium-containing glass, which is to say an amorphous substance.
    Type: Application
    Filed: January 21, 2016
    Publication date: January 18, 2018
    Inventors: Takashi ICHIMURA, Hiroyuki ITO, Shinichi KATO, Hisaya MURAKOSHI, Tadashi FUJIEDA, Tatsuya MIYAKE, Takashi NAITOU, Takuya AOYAGI, Kenji TANIMOTO
  • Publication number: 20150255240
    Abstract: A conventional method to process a tip fails to designate the dimension of the shape of the end of the tip, and so fails to obtain a tip having any desired diameter. Impurities may be attached to the tip. Based on a correlation between the voltage applied or the time during processing of the end of the tip and the diameter of the tip end, the applied voltage is controlled so as to obtain a desired diameter of the tip end for processing of the tip. This allows a sharpened tip made of a tungsten monocrystal thin wire to be manufactured to have any desired diameter in the range of 0.1 ?m or more and 2.0 ?m or less.
    Type: Application
    Filed: October 12, 2012
    Publication date: September 10, 2015
    Inventors: Takashi Ichimura, Hisao Nitta, Nobuyuki Sonobe, Boklae Cho, Hisaya Murakoshi
  • Patent number: 8803411
    Abstract: In an accelerating tube which uses a conductive insulator, there is a possibility that the dopant concentration on a surface of the conductive insulator becomes non-uniform so that the surface resistance of the conductive insulator becomes non-uniform. Accordingly, a circumferential groove is formed on the inner surface of the conductive insulator accelerating tube in plural stages, and metal is metalized along inner portions of the grooves. When the resistance of a specific portion on the surface of the accelerating tube differs from the resistance of an area around the specific portion, the potential of the metalized region on the inner surface of the accelerating tube becomes a fixed value and hence, the potential distribution on the inner surface of the accelerating tube in the vertical direction can be maintained substantially equal without regard to the circumferential direction.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: August 12, 2014
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Shunichi Watanabe, Takashi Onishi, Minoru Kaneda, Hisaya Murakoshi
  • Patent number: 8766542
    Abstract: The disclosed charged particle beam apparatus includes a field-emission electron source including <310> single crystal of tungsten; a vacuum chamber having the electron source therein; an exhausting system for exhausting the vacuum chamber; a filament connected to the electron source to let flow a current through the electron source and thereby heat the electron source; a power supply for letting a current flow through the filament; an ammeter for measuring a total current emitted from the electron source; and a controlling unit for exercising control to cause the power supply to let a current flow through the filament when the total current measured periodically has become a predetermined ratio or less as compared with a total current from the electron source found immediately after first electron beam emission, or a total current from the electron beam found immediately after a current is let flow through the filament.
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: July 1, 2014
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Boklae Cho, Shigeru Kokubo, Hisaya Murakoshi, Hisao Nitta
  • Publication number: 20130200788
    Abstract: The disclosed charged particle beam apparatus includes a field-emission electron source including <310> single crystal of tungsten; a vacuum chamber having the electron source therein; an exhausting system for exhausting the vacuum chamber; a filament connected to the electron source to let flow a current through the electron source and thereby heat the electron source; a power supply for letting a current flow through the filament; an ammeter for measuring a total current emitted from the electron source; and a controlling unit for exercising control to cause the power supply to let a current flow through the filament when the total current measured periodically has become a predetermined ratio or less as compared with a total current from the electron source found immediately after first electron beam emission, or a total current from the electron beam found immediately after a current is let flow through the filament.
    Type: Application
    Filed: January 19, 2011
    Publication date: August 8, 2013
    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Boklae Cho, Shigeru Kokubo, Hisaya Murakoshi, Hisao Nitta
  • Patent number: 8502141
    Abstract: Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph.
    Type: Grant
    Filed: June 19, 2009
    Date of Patent: August 6, 2013
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Masaki Hasegawa, Hisaya Murakoshi, Hiroshi Makino
  • Patent number: 8481935
    Abstract: A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: July 9, 2013
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Akira Ikegami, Minoru Yamazaki, Hideyuki Kazumi, Koichiro Takeuchi, Hisaya Murakoshi