Abstract: The present invention provides a semiconductor laser device for improving temperature characteristics of waveguide structures and realizing stable light emitting patterns and high output, and a method for making the same. The semiconductor laser device (1) comprises: an n-type clad layer (5) laminated on a substrate (2); an active layer (6) laminated on the n-type clad layer (5); a p-type clad layer (7) laminated on the active layer (6); and a plurality of waveguide structures (8) formed on the p-type clad layer (7) and having a ridge of a horn shape in top view. In this configuration, a divider (29) is formed between adjacent waveguide structures (8), and the divider (29) comprises: a groove (30) dividing the active layer (6); and a heat dissipation material (34) filled in the groove (30) and having a thermal conductivity higher than a thermal conductivity of a semiconductor layer (4).

Abstract: The present invention provides a semiconductor laser device for improving temperature characteristics of waveguide structures and realizing stable light emitting patterns and high output, and a method for making the same. The semiconductor laser device (1) comprises: an n-type clad layer (5) laminated on a substrate (2); an active layer (6) laminated on the n-type clad layer (5); a p-type clad layer (7) laminated on the active layer (6); and a plurality of waveguide structures (8) formed on the p-type clad layer (7) and having a ridge of a horn shape in top view. In this configuration, a divider (29) is formed between adjacent waveguide structures (8), and the divider (29) comprises: a groove (30) dividing the active layer (6); and a heat dissipation material (34) filled in the groove (30) and having a thermal conductivity higher than a thermal conductivity of a semiconductor layer (4).

Abstract: A semiconductor laser device having a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate in this order, a ridge-shaped upper second cladding layer provided on the upper first cladding layer, a current blocking layer provided on both sides of the upper second cladding layer, and a contact layer provided on the upper second cladding layer. A current interrupting layer or layers formed of an insulating material are provided between the upper second cladding layer and the contact layer, in the vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in the longitudinal direction of the upper second cladding layer.

Abstract: A light source device for a laser beam printer in which a semiconductor laser is driven with a pulse current having a minimum pulse width at the ON time on the order of milliseconds or less is provided, wherein the semiconductor laser is formed so that either the rate of change at the rise portion of the pulse current becomes ±8% or less or the semiconductor laser is excited in a multiple mode in the vicinity of the threshold value of the oscillation, and the semiconductor laser oscillates in a single mode at a current separated from the threshold value, by adjusting of at least one of the width w of a stripe groove (7a) of the current block layer, the composition of clad layers (5), the distance d between the current block layer (7) and the active layer (4), the composition of the current block layer (7) and the formation of a light absorption layer into the current block layer (7).

Abstract: A semiconductor laser device having a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate in this order, a ridge-shaped upper second cladding layer provided on the upper first cladding layer, a current blocking layer provided on both sides of the upper second cladding layer, and a contact layer provided on the upper second cladding layer. A current interrupting layer or layers formed of an insulating material are provided between the upper second cladding layer and the contact layer, in the vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in the longitudinal direction of the upper second cladding layer.