Patents by Inventor Hisayoshi Ueoka

Hisayoshi Ueoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High dielectric constant type ceramic composition consisting essentially of Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3 -Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 -Pb(Mg.sub.1/2 W.sub.1/2)O.sub.3
    Patent number: 4287075
    Abstract: A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3 -Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 -Pb(Mg.sub.1/2 W.sub.1/2)O.sub.3, can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics, and; have a low dielectric loss.A particular amount of the additives, i.e., Pb-(Mn.sub.2/3 W.sub.1/3)O.sub.3, Pb(Mb.sub.1/2 W.sub.1/2)O.sub.3 Pb(Mn.sub.1/2 Nb.sub.2/3)O.sub.3, MnO, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3, Li.sub.2 O, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.
    Type: Grant
    Filed: April 16, 1979
    Date of Patent: September 1, 1981
    Assignee: TDK Electronics Co., Ltd.
    Inventors: Shinobu Fujiwara, Kiyoshi Furukawa, Nobuaki Kikuchi, Osamu Iizawa, Hitoshi Tanaka, Hisayoshi Ueoka
  • High dielectric constant type ceramic composition
    Patent number: 4235635
    Abstract: A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 --Pb(ZrO.sub.3), can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics; have a low dependence of dielectric constant upon temperature, and; have a low dielectric loss.A particular amount of the additives, i.e., MnO, Pb(Mn.sub.1/3 Nb.sub.2/3)O.sub.3, Pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, Pb(Mn.sub.2/3 W.sub.1/3)O.sub.3, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.
    Type: Grant
    Filed: July 26, 1979
    Date of Patent: November 25, 1980
    Assignee: TDK Electronics Co., Inc.
    Inventors: Osamu Iizawa, Shinobu Fujiwara, Hisayoshi Ueoka, Kiyoshi Furukawa, Nobuaki Kikuchi, Hitoshi Tanaka
  • High dielectric constant type ceramic composition consisting essentially of Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3 -Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3
    Patent number: 4216102
    Abstract: A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3 --Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3, can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics, and; have a low dielectric loss.A particular amount of the additives, i.e., pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, Pb(Mn.sub.1/3 Nb.sub.2/3)O.sub.3, MnO, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3 Li.sub.2 O, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.
    Type: Grant
    Filed: April 6, 1979
    Date of Patent: August 5, 1980
    Assignee: TDK Electronics Co., Ltd.
    Inventors: Kiyoshi Furukawa, Shinobu Fujiwara, Nobuaki Kikuchi, Osamu Iizawa, Hitoshi Tanaka, Hisayoshi Ueoka
  • High dielectric constant type ceramic composition consisting essentially of Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3 -Pb(Mg.sub.1/3 Ta.sub.2/3)O.sub.3
    Patent number: 4216103
    Abstract: A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.1/2 Nb.sub.178 )O.sub.3 -Pb(Mg.sub.1/3 Ta.sub.2/3)O.sub.3, can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics, and; have a low dielectric loss.A particular amount of the additives, i.e., Pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, Pb(Mn.sub.1/3 Nb.sub.170 )O.sub.3, MnO, Pb(Mn.sub.1/3 Ta.sub.170 )O.sub.3, Li.sub.2 O, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.
    Type: Grant
    Filed: April 6, 1979
    Date of Patent: August 5, 1980
    Assignee: TDK Electronics Co., Ltd.
    Inventors: Shinobu Fujiwara, Kiyoshi Furukawa, Nobuaki Kikuchi, Osamu Iizawa, Hitoshi Tanaka, Hisayoshi Ueoka
  • Non-linear resistor
    Patent number: 4160748
    Abstract: A non-linear resistor comprises a sintered body of a ceramic composition which comprises 99.93 to 50 mole % of zinc oxide as ZnO; 0.01 to 10 mole % of a specific rare earth oxide as R.sub.2 O.sub.3 (R represents lanthanum, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium or lutetium) 0.01 to 10 mole % of an alkaline earth oxide as MO (M represents calcium, strontium or barium) and 0.05 to 30 mole % of cobalt oxide as CoO.
    Type: Grant
    Filed: December 23, 1977
    Date of Patent: July 10, 1979
    Assignee: TDK Electronics Co., Ltd.
    Inventors: Masatada Yodogawa, Susumu Miyabayashi, Yoshinari Yamashita, Takashi Yamamoto, Kohji Hayashi, Hisayoshi Ueoka
  • Non-linear resistor
    Patent number: 4077915
    Abstract: A non-linear resistor comprises a sintered body of a ceramic composition which comprises 99.94 to 80.0 mole % of zinc oxide as ZnO, 0.02 to 10.0 mole % of the specific rare earth oxide selected from the group consisting of oxides of cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium as R.sub.2 O.sub.3, and 0.04 to 10 mole % of manganese oxide as MnO.
    Type: Grant
    Filed: September 2, 1976
    Date of Patent: March 7, 1978
    Assignee: TDK Electronics Co., Ltd.
    Inventors: Masatada Yodogawa, Susumu Miyabayashi, Yoshinari Yamashita, Takashi Yamamoto, Kohji Hayashi, Hisayoshi Ueoka
  • Semiconducting ceramics containing vanadium oxide
    Patent number: 4022716
    Abstract: Semiconducting ceramics are produced by firing a semiconducting composition of the barium titanate type containing vanadium oxide in the amount of 0.001 to 0.5 wt%. A change in the specific resistance over the range of the temperature at which the positive temperature coefficient characteristic of resistivity (PTCR) is exhibited can be increased by as much as 10.sup.5 times and the specific resistance value at room temperature can be controlled at a desired value. By further adding silicon dioxide to the above composition in the amount of 0.05 to 1.5 wt% the above effects can be enhanced, especially the specific resistance at ambient temperature.
    Type: Grant
    Filed: February 17, 1976
    Date of Patent: May 10, 1977
    Assignee: TDK Electronics Company, Limited
    Inventors: Hisayoshi Ueoka, Masatada Yodogawa