Abstract: A power semiconductor module includes an insulating substrate, a first conductive circuit pattern, a second conductive circuit pattern, a first semiconductor device, a second semiconductor device, a sealing member, and a first barrier layer. The sealing member seals the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, and the second conductive circuit pattern. At least one of the first barrier layer and the sealing member includes a first stress relaxation portion. This configuration improves the reliability of the power semiconductor module.

Abstract: A reliable semiconductor module and a reliable power conversion device using the semiconductor module are obtained. A semiconductor module includes a heat dissipation member, a semiconductor device, and a thermally conductive insulating resin sheet. The thermally conductive insulating resin sheet connects the heat dissipation member and the semiconductor device. The semiconductor device includes a semiconductor element and a metal wiring member. The metal wiring member is electrically connected to the semiconductor element. The metal wiring member includes a terminal portion protruding outside the semiconductor device. In a surface portion of the semiconductor device, a concave portion is formed outward of a partial region to which the thermally conductive insulating resin sheet is connected. The concave portion is located in a region closer to the heat dissipation member than the terminal portion.

Abstract: A power semiconductor module includes an insulating substrate, a first conductive circuit pattern, a second conductive circuit pattern, a first semiconductor device, a second semiconductor device, a sealing member, and a first barrier layer. The sealing member seals the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, and the second conductive circuit pattern. At least one of the first barrier layer and the sealing member includes a first stress relaxation portion. This configuration improves the reliability of the power semiconductor module.