Abstract: A rare earth magnet including a magnetic phase having the composition represented by (Nd(1?x?y)LaxCey)2(Fe(1?z)Coz)14B. When the saturation magnetization at absolute zero and the Curie temperature calculated by Kuzmin's formula based on the measured values at finite temperature and the saturation magnetization at absolute zero and the Curie temperature calculated by first principles calculation are respectively subjected to data assimilation. The saturation magnetization M(x, y, z, T=0) at absolute zero and the Curie temperature obtained by machine learning using the assimilated data group are applied again to Kuzmin's formula and the saturation magnetization at finite temperature is represented by a function M(x, y, z, T), x, y, and z of the formula in an atomic ratio are in a range of satisfying M(x, y, z, T)>M(x, y, z=0, T) and 400?T?453.

Abstract: A rare earth magnet including a magnetic phase having the composition represented by (Nd(1?x?y)LaxCey)2(Fe(1?z)Coz)14B. When the saturation magnetization at absolute zero and the Curie temperature calculated by Kuzmin's formula based on the measured values at finite temperature and the saturation magnetization at absolute zero and the Curie temperature calculated by first principles calculation are respectively subjected to data assimilation. The saturation magnetization M(x, y, z, T=0) at absolute zero and the Curie temperature obtained by machine learning using the assimilated data group are applied again to Kuzmin's formula and the saturation magnetization at finite temperature is represented by a function M(x, y, z, T), x, y, and z of the formula in an atomic ratio are in a range of satisfying M(x, y, z, T)>M(x, y, z=0, T) and 400?T?453.

Abstract: A half-metallic antiferromagnetic material that is chemically stable and has a stable magnetic structure is provided. The half metallic antiferromagnetic material according the present invention is a compound containing two or more magnetic elements and a halogen, the two or more magnetic elements containing a magnetic element having fewer than 5 effective d electrons and a magnetic element having more than 5 effective d electrons. In addition, a total number of effective d electrons of the two or more magnetic elements is 10 or a value close to 10.

Abstract: A half-metallic antiferromagnetic material according to the present invention is a compound that has a crystal structure of a nickel arsenic type, a zinc blende type, a wurtzite type, a chalcopyrite type or a rock salt type and is constituted of two or more magnetic elements and a chalocogen or a pnictogen. The two or more magnetic elements contain a magnetic element having fewer than 5 effective d electrons and a magnetic element having more than 5 effective d electrons, and a total number of effective d electrons of the two or more magnetic elements is 10 or a value close to 10.

Abstract: An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a d-electron number of less than five and a magnetic element with a d-electron number of more than five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.

Abstract: An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a d-electron number of less than five and a magnetic element with a d-electron number of more than five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.