Patents by Inventor Hisham S. Mohamed

Hisham S. Mohamed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same
    Patent number: 10297709
    Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: May 21, 2019
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, EGYPT NANOTECHNOLOGY CENTER
    Inventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
  • Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same
    Patent number: 10283668
    Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: May 7, 2019
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, EGYPT NANOTECHNOLOGY CENTER
    Inventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
  • PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME
    Publication number: 20160343899
    Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
    Type: Application
    Filed: August 5, 2016
    Publication date: November 24, 2016
    Inventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
  • PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME
    Publication number: 20160260859
    Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
    Type: Application
    Filed: May 17, 2016
    Publication date: September 8, 2016
    Inventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
  • PHOTOVOLTAIC DEVICE USING NANO-SPHERES FOR TEXTURED ELECTRODES
    Publication number: 20150075608
    Abstract: An electronic device includes a substrate and a plurality of particles anchored to the substrate. An electrode material is formed over the particles and configured to form peaks over the particles. One or more operational layers are formed over the electrode material for performing a device function.
    Type: Application
    Filed: November 17, 2014
    Publication date: March 19, 2015
    Inventors: Ahmed Abou-Kandil, Keith E. Fogel, Augustin J. Hong, Jeehwan Kim, Hisham S. Mohamed, Devendra K. Sadana
  • Photovoltaic device using nano-spheres for textured electrodes
    Patent number: 8916409
    Abstract: An electronic device includes a substrate and a plurality of particles anchored to the substrate. An electrode material is formed over the particles and configured to form peaks over the particles. One or more operational layers are fog led over the electrode material for performing a device function.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: December 23, 2014
    Assignee: International Business Machines Corporation
    Inventors: Ahmed Abou-Kandil, Keith E. Fogel, Augustin J. Hong, Jeehwan Kim, Hisham S. Mohamed, Devendra K. Sadana
  • PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME
    Publication number: 20140196780
    Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
    Type: Application
    Filed: March 18, 2014
    Publication date: July 17, 2014
    Applicants: EGYPT NANOTECHNOLOGY CENTER, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
  • PHOTOVOLTAIC DEVICE USING NANO-SPHERES FOR TEXTURED ELECTRODES
    Publication number: 20130095599
    Abstract: An electronic device includes a substrate and a plurality of particles anchored to the substrate. An electrode material is formed over the particles and configured to form peaks over the particles. One or more operational layers are fog led over the electrode material for performing a device function.
    Type: Application
    Filed: October 18, 2011
    Publication date: April 18, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: AHMED ABOU-KANDIL, Keith E. Fogel, Augustin J. Hong, Jeehwan Kim, Hisham S. Mohamed, Devendra K. Sadana
  • PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME
    Publication number: 20120031477
    Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
    Type: Application
    Filed: August 4, 2010
    Publication date: February 9, 2012
    Applicants: EGYPT NANOTECHNOLOGY CENTER, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Keith E. Fogel, Jee H. Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail