Abstract: A charged particle beam apparatus includes: a sample chamber; a sample stage; an electron beam irradiation system for irradiating the sample with an electron beam; a focused ion beam irradiation system for irradiating the sample with a focused ion beam; a sample stage drive unit having a rotational axis orthogonal to at least one of an irradiation axis of the electron beam irradiation system and an irradiation axis of the focused ion beam irradiation system; and a sample transporting mechanism for transporting the sample to the sample stage. The sample transporting mechanism includes a transportation path provided in the sample stage drive unit in a direction parallel to the rotational axis of the sample stage drive unit, and is configured to transport the sample to the sample stage through the transportation path.

Abstract: Provided is a sample preparation method, including: while displaying a SEM image of a first cross-section of a sample on a display screen, subjecting the first cross-section to etching processing by scanning and irradiation of a focused ion beam, thereby exposing a second cross-section; and while displaying a SEM image of another cross-section on the display screen, changing a scanning direction of the focused ion beam while performing the scanning and irradiation of the focused ion beam and subjecting the second cross-section to etching processing, thereby exposing a desired cross-section of the sample.

Abstract: A TEM sample preparation method including: placing a thin sample on a sample holder so that a first side surface of the thin sample which is closer to a desired observation target is opposed to a focused ion beam column; setting a processing region, which is to be subjected to etching processing by a focused ion beam so as to form a thin film portion including the observation target and having a thickness direction substantially parallel to a thickness direction of the thin sample, to a region of the first side surface that is adjacent to the thin film portion; and performing the etching processing to a portion of the thin sample extending from the first side surface thereof to a front surface thereof by irradiating the processing region with the focused ion beam from the focused ion beam column.

Abstract: Provided is a method of preparing a sample for TEM observation, including: supplying deposition gas to a cross-section of a lamellar portion having exposed recesses and irradiating a deposition film forming region of the cross-section including the recesses with an electron beam, thereby forming a deposition film; irradiating the deposition film with an ion beam, thereby removing a deposition film formed on the cross-section; and irradiating the lamellar portion with the ion beam, thereby thinning the lamellar portion.