Patents by Inventor Hitesh BORKAR

Hitesh BORKAR has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-states nonvolatile opto-ferroelectric memory material and process for preparing the same thereof
    Patent number: 10115456
    Abstract: The invention deals with multi-states nonvolatile opto-ferroelectric memory element and method of preparing the same thereof. This invention describes multi-states nonvolatile opto-ferroelectric memory element consisting of opto-ferroelectric memory material comprised of Pb1-x(Bi0.5Li0.5)x(Ti1-yZry)O3, wherein x=0.2 to 0.8 and y=0.2 to 0.6, said memory material (PBLZT) photovoltaic ferroelectric material is characterized by a single-phase opto-ferroelectric materials, photovoltaic and multi-states ferroelectric memory material. The invention relates to process of preparing multi-states nonvolatile opto-ferroelectric memory material by solid route, solution-gel process and pulsed laser process. It describes development of multi-states nonvolatile opto-ferroelectric memory material at room temperature. Invention describes a ferroelectric material whose polarization is switched by white light and low power LASER (10-50 mW) with wavelength (405 nm).
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: October 30, 2018
    Assignee: Council of Scientific & Industrial Research
    Inventors: Ashok Kumar, Hitesh Borkar, Vaibhav Rao, Monika Tomar, Vinay Gupta
  • MULTI-STATES NONVOLATILE OPTO-FERROELECTRIC MEMORY MATERIAL AND PROCESS FOR PREPARING THE SAME THEREOF
    Publication number: 20170206952
    Abstract: The invention deals with multi-states nonvolatile opto-ferroelectric memory element and method of preparing the same thereof. This invention describes multi-states nonvolatile opto-ferroelectric memory element consisting of opto-ferroelectric memory material comprised of Pb1-x(Bi0.5Li0.5)x(Ti1-yZry)O3, wherein x=0.2 to 0.8 and y=0.2 to 0.6, said memory material (PBLZT) phtotovoltaic ferroelectric material is characterized by a single-phase opto-ferroelectric materials, photovoltaic and multi-states ferroelectric memory material. The invention relates to process of preparing multi-states nonvolatile opto-ferroelectric memory material by solid route, solution-gel process and pulsed laser process. It describes development of multi-states nonvolatile opto-ferroelectric memory material at room temperature. Invention describes a ferroelectric material whose polarization is switched by white light and low power LASER (10-50 mW) with wavelength (405 nm).
    Type: Application
    Filed: January 13, 2017
    Publication date: July 20, 2017
    Inventors: Ashok KUMAR, Hitesh BORKAR, Vaibhav RAO, Monika TOMAR, Vinay GUPTA