Abstract: A remote monitoring method is provided for a remote monitoring system including a first communicator connected to a server that performs a charging process depending on a state of a power supply of an electrical apparatus and a second communicator connected to the first communicator via a wireless communication network and that monitors the state of the power supply of the electrical apparatus. When the second communicator detects turning-off of the electric power of the electrical apparatus, the second communicator transmits on-information indicating the change in the state to the first communicator via the wireless communication network, and maintains the electrical apparatus in the on-state as long as the wireless communication continues. However, if an occurrence of an interruption of the wireless communication is detected, the second communicator turns off the electric power of the electrical apparatus.

Abstract: A remote monitoring method is provided for a remote monitoring system including a first communicator connected to a server that performs a charging process depending on a state of a power supply of an electrical apparatus and a second communicator connected to the first communicator via a wireless communication network and that monitors the state of the power supply of the electrical apparatus. When the second communicator detects turning-off of the electric power of the electrical apparatus, the second communicator transmits on-information indicating the change in the state to the first communicator via the wireless communication network, and maintains the electrical apparatus in the on-state as long as the wireless communication continues. However, if an occurrence of an interruption of the wireless communication is detected, the second communicator turns off the electric power of the electrical apparatus.

Abstract: A MIMO transmitter capable of highly efficient power amplification over a wide dynamic range or for a high PAPR signal. In the MIMO transmitter (100), an amplifier (150) amplifies an input signal and outputs the amplified signal to an antenna (170). An amplifier (160) amplifies an input signal and outputs the amplified signal to an antenna (180). A peak detection part (130) detects an envelope of a first transmission sequence. A branch switching part (140) switches over to input all of the first transmission sequence to the amplifier (150) or to input part of the first transmission sequence together with a second transmission sequence to the amplifier (160) based on comparison results between the envelope detection result of the first transmission sequence and a threshold value. This constitution can reduce a peak of the input signal of the amplifier, and thus the amplifier can be efficiently used.

Abstract: A MIMO transmitter capable of highly efficient power amplification over a wide dynamic range or for a high PAPR signal. In the MIMO transmitter (100), an amplifier (150) amplifies an input signal and outputs the amplified signal to an antenna (170). An amplifier (160) amplifies an input signal and outputs the amplified signal to an antenna (180). A peak detection part (130) detects an envelope of a first transmission sequence. A branch switching part (140) switches over to input all of the first transmission sequence to the amplifier (150) or to input part of the first transmission sequence together with a second transmission sequence to the amplifier (160) based on comparison results between the envelope detection result of the first transmission sequence and a threshold value. This constitution can reduce a peak of the input signal of the amplifier, and thus the amplifier can be efficiently used.

Abstract: A technique to prevent return light by an inexpensive construction in an optical module is disclosed. According to this technique, at the end face of a cylindrical metal part made of SUS 303, a hole to expose the end of an optical fiber wire 2 is formed, and then a hole to let through an optical fiber 1 is made to fabricate a cylindrical metal ferrule 3. Further, in a cylindrical metal part made of SUS 304, a hole to let through the optical fiber and the metal ferrule 3 is formed to fabricate a metal ferrule 4. The metal ferrule 3 is inserted and jointed into a cavity section of the metal ferrule 4 by press fitting or the like. Further, the optical fiber is inserted in the holes of the metal ferrules 3 and 4 so that the optical fiber wire is exposed from an end face of the metal ferrule 3. The gap between the optical fiber and the metal ferrules 3, 4 is jointed by an adhesive 17.

Abstract: It is an object of the present invention to provide a light sending and receiving module by a ferrule, a connecting device of the light sending and receiving module and a method of manufacturing the light sending and receiving module characterized in that: the light sending and receiving module is interposed between the butting faces of the optical fibers without embedding an optical filter; deterioration of the optical characteristic can be prevented by eliminating a gap between the optical fiber and the optical filter; the number of ferrules is decreased so as to reduce the manufacturing cost; and further the size can be reduced by omitting an adapter. According to the present invention, there are provided a ferrule joining member (1A), in which a portion or all of the circumferential face of an optical fiber (4) is exposed from an end portion of the ferrule in which the optical fiber (4) is embedded, and a guide sleeve (2A) for positioning into which the ferrule joining member (1A) is inserted.

Abstract: A semiconductor microstructure is formed by forming a groove having a surface of a side wall and a surface of a bottom, and depositing a semiconductor layer in the groove so that a width of the semiconductor layer is defined by the surface of the side wall.

Abstract: First and second junctions are set so as to control electric fields applied to an active layer, independent from each other, and the electric field applied by the first junction controls exciting conditions while the electric field applied by the second junction drives the active layer so as to simplify a drive circuit for an optical semiconductor device.

Abstract: A first method of forming a fine structure on a compound semiconductor for providing vertical side wall surfaces of a wire is as follows:One side wall surface of a wire is formed by applying an ion beam for etching with a predetermined incident angle on the side of this side wall surface to a surface of a compound semiconductor layer having a multiquantum well structure, covered with a first mask to from this side wall surface; and then, the other side wall surface is formed by applying the ion beam with the predetermined incident angle from the side of the other side wall surface to be formed after removal of the first mask and forming a second mask for forming the other side wall surface. In a second method, a third mask having a stripe pattern is formed on the surface of the compound semiconductor; one side of the wire is formed by first etching with the slantwise incident ion beam. The second etching is also formed similarly by the ion beam with the one side wall surface is protected.

Abstract: In a method for producing a fine semiconductor structure, a first layer is formed on a second layer, an etching-resistant mask is formed on the first layer, the second layer is etched in an etchant to form a desired shape thereof, a composition of the first layer is different from a composition of the second layer, and at least one of boundary surfaces of the etching-resistant mask and the first layer facing to each other is substantially prevented from including another substance which is different from both of the etching-resistant mask and the first layer.

Abstract: A testing sample is formed in a three-story structure consisting of a photo-resist 13, a silicon dioxide film 12, and a GaAs substrate 11. The pattern of the photo-resist 13 is transferred onto the silicon dioxide film 12 by effecting the photo-resist 13 as a mask. Thus obtained silicon dioxide film mask 14 and the GaAs substrate 11 are processed in compliance with a reactive ion beam etching method; that is, the silicon dioxide film mask 14 and the GaAs substrate 11 are irradiated by the chlorine ion beam 15. The silicon dioxide film and the GaAs substrate are gradually etched by the irradiation of the chlorine ion beam 15. In this case, the etching is differently developed in two regions. In one region which is not covered by the mask, the etching advances uniformly in a normal direction with respect to the GaAs substrate at a certain etching rate.