Patents by Inventor Hitomi Fujimoto
Hitomi Fujimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10632776Abstract: A structure manufacturing method manufactures a structure including an expansion layer M2 by expanding the expansion layer M2 that is included in a print medium M and expands by heating. An electromagnetic wave-heat conversion material is formed on a first surface of the print medium M in density corresponding to a shape of a structure C0 to be manufactured. Here, either the material is formed in lower density than density of the material in a first part of the expansion layer M2 to be expanded to a first height H1 and density of the material in a second part of the expansion layer M2 to be expanded to a second height H2 or the material is not formed, in a boundary region A0 which is the first surface in a boundary part between the first part and the second part. The print medium M is then irradiated with electromagnetic waves.Type: GrantFiled: December 16, 2016Date of Patent: April 28, 2020Assignee: CASIO COMPUTER CO., LTD.Inventor: Hitomi Fujimoto
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Patent number: 10516805Abstract: A three-dimensional image forming system according to an embodiment of the present invention is a system that expands the front side of a thermally expandable sheet formed by laminating a thermally expanding layer on a base material and forms irregularities in a desired area, the system includes a print data density adjusting unit that adjusts, in print data for printing, on the back side of the thermally expandable sheet, a grayscale image for expanding the thermally expandable sheet to a surface height according to a density, the density of an outline part obtained by setting a region from a boundary between adjacent two regions having different densities in the grayscale image to a predetermined distance as the outline part in at least either of the two regions having different densities such that steep steps are formed on the front side of the thermally expandable sheet at the boundary.Type: GrantFiled: November 6, 2017Date of Patent: December 24, 2019Assignee: CASIO COMPUTER CO., LTD.Inventor: Hitomi Fujimoto
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Patent number: 10369812Abstract: A computer 10 generates image data of a density image to be printed on a print medium M including an expansion layer M1 that expands by heating. First density image data for printing on one surface FS of the print medium M to expand the expansion layer M1 is prepared first. The first density image data is then converted so that the density of a part of a target region having the same density included in a first density image P1 represented by the first density image data is higher than the density of the other part of the target region, to generate third density image data.Type: GrantFiled: December 7, 2016Date of Patent: August 6, 2019Assignee: CASIO COMPUTER CO., LTD.Inventors: Katsunori Suzuki, Hitomi Fujimoto
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Publication number: 20180178543Abstract: A three-dimensional image forming system according to an embodiment of the present invention is a system that expands the front side of a thermally expandable sheet formed by laminating a thermally expanding layer on a base material and forms irregularities in a desired area, the system includes a print data density adjusting unit that adjusts, in print data for printing, on the back side of the thermally expandable sheet, a grayscale image for expanding the thermally expandable sheet to a surface height according to a density, the density of an outline part obtained by setting a region from a boundary between adjacent two regions having different densities in the grayscale image to a predetermined distance as the outline part in at least either of the two regions having different densities such that steep steps are formed on the front side of the thermally expandable sheet at the boundary.Type: ApplicationFiled: November 6, 2017Publication date: June 28, 2018Applicant: CASIO COMPUTER CO., LTD.Inventor: Hitomi FUJIMOTO
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Publication number: 20170274584Abstract: A structure manufacturing method manufactures a structure including an expansion layer M2 by expanding the expansion layer M2 that is included in a print medium M and expands by heating. An electromagnetic wave-heat conversion material is formed on a first surface of the print medium M in density corresponding to a shape of a structure C0 to be manufactured. Here, either the material is formed in lower density than density of the material in a first part of the expansion layer M2 to be expanded to a first height H1 and density of the material in a second part of the expansion layer M2 to be expanded to a second height H2 or the material is not formed, in a boundary region A0 which is the first surface in a boundary part between the first part and the second part. The print medium M is then irradiated with electromagnetic waves.Type: ApplicationFiled: December 16, 2016Publication date: September 28, 2017Applicant: CASIO COMPUTER CO., LTD.Inventor: Hitomi FUJIMOTO
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Publication number: 20170195522Abstract: A computer 10 generates image data of a density image to be printed on a print medium M including an expansion layer M1 that expands by heating. First density image data for printing on one surface FS of the print medium M to expand the expansion layer M1 is prepared first. The first density image data is then converted so that the density of a part of a target region having the same density included in a first density image P1 represented by the first density image data is higher than the density of the other part of the target region, to generate third density image data.Type: ApplicationFiled: December 7, 2016Publication date: July 6, 2017Applicant: CASIO COMPUTER CO., LTD.Inventors: Katsunori SUZUKI, Hitomi FUJIMOTO
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Patent number: 9123577Abstract: Electrical isolation in non-volatile memory is provided by air gaps formed using sacrificial films of differing etch rates. A high etch rate material is formed in an isolation trench. Flowable chemical vapor deposition processes are used to form high etch rate films, and curing is performed to increase their etch rate. A low etch material is formed over the high etch rate material and provides a controlled etch back between charge storage regions in a row direction. A discrete low etch rate layer can be formed or the high etch rate material can be oxidized to form an upper region with a lower etch rate. A controlled etch back enables formation of a wrap-around dielectric and control gate structure in the row direction with minimized variability in the dimensions of the structures. At least a portion of the high etch rate material is removed to form air gaps for isolation.Type: GrantFiled: December 12, 2012Date of Patent: September 1, 2015Assignee: SanDisk Technologies Inc.Inventors: Hitomi Fujimoto, Hiroaki Iuchi, Ming Tian, Daisuke Maekawa
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Patent number: 8937011Abstract: Techniques disclosed herein may achieve crack free filling of structures. A flowable film may substantially fill gaps in a structure and extend over a base in an open area adjacent to the structure. The top surface of the flowable film in the open area may slope down and may be lower than top surfaces of the structure. A capping layer having compressive stress may be formed over the flowable film. The bottom surface of the capping layer in the open area adjacent to the structure is lower than the top surfaces of the lines and may be formed on the downward slope of the flowable film. The flowable film is cured after forming the capping layer, which increases tensile stress of the flowable film. The compressive stress of the capping layer counteracts the tensile stress of the flowable film, which may prevent a crack from forming in the base.Type: GrantFiled: January 15, 2013Date of Patent: January 20, 2015Assignee: SanDisk 3D LLCInventors: Hiroaki Iuchi, Hitomi Fujimoto, Chao Feng Yeh
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Patent number: 8802561Abstract: Techniques disclosed herein prevent wire flaking (collapse). One aspect is an improved way of forming wires over trenches, which may be located in a hookup region of a 3D memory array, and may be used to form electrical connections between conductive lines in the memory array and drivers. The trenches are formed between CMP dummy structures. The trenches are partially filled with a flowable oxide film, which leaves a gap in the trench that is at least as wide as the total pitch of the wires to be formed. A capping layer is formed over the flowable film. After forming a conductive layer over the dielectric layer, the conductive layer is etched to form conductive wires. Some of the capping layer, as well as the CMP dummy structures may be removed. Thus, the conductive wires may be at least temporarily supported by lines of material formed from the capping layer.Type: GrantFiled: April 12, 2013Date of Patent: August 12, 2014Assignee: SanDisk 3D LLCInventors: Chao Feng Yeh, Hiroaki Iuchi, Hitomi Fujimoto, Hisayuki Nozawa
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Publication number: 20140170847Abstract: Techniques disclosed herein may achieve crack free filling of structures. A flowable film may substantially fill gaps in a structure and extend over a base in an open area adjacent to the structure. The top surface of the flowable film in the open area may slope down and may be lower than top surfaces of the structure. A capping layer having compressive stress may be formed over the flowable film. The bottom surface of the capping layer in the open area adjacent to the structure is lower than the top surfaces of the lines and may be formed on the downward slope of the flowable film. The flowable film is cured after forming the capping layer, which increases tensile stress of the flowable film. The compressive stress of the capping layer counteracts the tensile stress of the flowable film, which may prevent a crack from forming in the base.Type: ApplicationFiled: January 15, 2013Publication date: June 19, 2014Applicant: SANDISK 3D LLCInventors: Hiroaki Iuchi, Hitomi Fujimoto, Chao Feng Yeh
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Publication number: 20140159135Abstract: Electrical isolation in non-volatile memory is provided by air gaps formed using sacrificial films of differing etch rates. A high etch rate material is formed in an isolation trench. Flowable chemical vapor deposition processes are used to form high etch rate films, and curing is performed to increase their etch rate. A low etch material is formed over the high etch rate material and provides a controlled etch back between charge storage regions in a row direction. A discrete low etch rate layer can be formed or the high etch rate material can be oxidized to form an upper region with a lower etch rate. A controlled etch back enables formation of a wrap-around dielectric and control gate structure in the row direction with minimized variability in the dimensions of the structures. At least a portion of the high etch rate material is removed to form air gaps for isolation.Type: ApplicationFiled: December 12, 2012Publication date: June 12, 2014Applicant: SANDISK TECHNOLOGIES INC.Inventors: Hitomi Fujimoto, Hiroaki Iuchi, Ming Tian, Daisuke Maekawa