Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: A pet diaper extends in a lateral direction along a waist of a pet and in a longitudinal direction from a ventral side to a dorsal side of the pet, the lateral direction being orthogonal to the longitudinal direction, and the pet diaper includes: a main body including: an absorbent core; and a tail hole having a longitudinally elongated shape with a largest opening width in the longitudinal direction that is larger than a largest opening width in the lateral direction; a pair of fastening tabs, disposed closer to the ventral side than is the tail hole, that extend outward from a lateral side edge of the main body; and a target portion, disposed closer to the dorsal side than is the tail hole, that engages with the pair of fastening tabs.