Abstract: The present invention is intended to provide: an anti-hCDCP1 antibody, which can be used as an active ingredient of anticancer agents having few side effects, etc.; and the aforementioned anti-hCDCP1 antibody that is formulated into ADC. Specifically, the present invention relates to an antibody that binds to human CDCP1 (CUB domain-containing protein 1), which has low binding property to human CD34-positive cells, or an antigen-binding fragment thereof.

Abstract: A chicken B cell that expresses a variety of human antibodies.

Abstract: It is an object of the present invention to provide a chicken B cell that expresses a variety of human antibodies.

Abstract: A carbonaceous particle is provided which comprises a hexagonal flake formed of an aggregate of a plurality of nanocarbons and having a side length of 0.1 to 100 mm and a thickness of 10 nm to 1 mm. Thereby, a carbonaceous particle is provided which has an excellent electron emission performance, has a high electron conductivity, shows excellent characteristics particularly when used for a secondary battery, and can suitably be applied to various devices other than a secondary battery as well.

Abstract: A method for producing nano-carbon materials, having a step wherein a starting material comprising one or more kinds of compounds selected from the group consisting saturated hydrocarbons, unsaturated hydrocarbons, saturated cyclic hydrocarbons, and alcohols whose atomic ratio of the component carbon to the component oxygen is more than 2.0 and a catalyst are together treated at a temperature in a range of from 100 to 800° C. while being compressed at a pressure in a range of from 0.2 to 60 MPa.

Abstract: A carbonaceous particle is provided which comprises a hexagonal flake formed of an aggregate of a plurality of nanocarbons and having a side length of 0.1 to 100 mm and a thickness of 10 nm to 1 mm. Thereby, a carbonaceous particle is provided which has an excellent electron emission performance, has a high electron conductivity, shows excellent characteristics particularly when used for a secondary battery, and can suitably be applied to various devices other than a secondary battery as well.

Abstract: A method for producing fullerenes, characterized in that said method includes a step (a) of contacting an aromatic compound-containing starting material with a supercritical fluid or a subcritical fluid in the presence of a transition metal element-containing catalyst at a temperature in a range of from 350 to 800° C. and at a pressure in a range of from 3 to 50 MPa. Said supercritical fluid or said subcritical fluid is formed from one or more kinds of materials selected from the group consisting of an aromatic compound as said starting material, a solvent for said aromatic compound, a solvent for said catalyst, water, dinitrogen monoxide, and ammonia.

Abstract: A method for producing fullerenes, characterized in that said method includes a step (a) of contacting an aromatic compound-containing starting material with a supercritical fluid or a subcritical fluid at a temperature in a range of from 31° C. to 500° C. and at a pressure in a range of from 3.8 MPa to 60 MPa. Said supercritical fluid or said subcritical fluid is formed from one or more kinds of materials selected from the group consisting of an aromatic compound as said starting material, a solvent capable of dissolving said aromatic compound, water, dinitrogen monoxide, and ammonia.

Abstract: A method for producing nano-carbon materials, having a step wherein a starting material comprising one or more kinds of compounds selected from the group consisting saturated hydrocarbons, unsaturated hydrocarbons, saturated cyclic hydrocarbons, and alcohols whose atomic ratio of the component carbon to the component oxygen is more than 2.0 and a catalyst are together treated at a temperature in a range of from 100 to 800° C. while being compressed at a pressure in a range of from 0.2 to 60 MPa, where said starting material is converted into a supercritical fluid or a subcritical fluid while said supercritical fluid or said subcritical fluid being contacted with said catalyst, or a step wherein said starting material, said catalyst and a supplementary material capable of functioning as a reaction promotion medium are together treated at a temperature in a range of from 100 to 800° C. while being compressed at a pressure in a range of from 0.

Abstract: A method for producing fullerenes, characterized in that said method includes a step (a) of contacting an aromatic compound-containing starting material with a supercritical fluid or a subcritical fluid in the presence of a transition metal element-containing catalyst at a temperature in a range of from 350 to 800° C. and at a pressure in a range of from 3 to 50 MPa. Said supercritical fluid or said subcritical fluid is formed from one or more kinds of materials selected from the group consisting of an aromatic compound as said starting material, a solvent for said aromatic compound, a solvent for said catalyst, water, dinitrogen monoxide, and ammonia.

Abstract: A method for producing fullerenes, characterized in that said method includes a step (a) of contacting an aromatic compound-containing starting material with a supercritical fluid or a subcritical fluid at a temperature in a range of from 31° C. to 500° C. and at a pressure in a range of from 3.8 MPa to 60 MPa. Said supercritical fluid or said subcritical fluid is formed from one or more kinds of materials selected from the group consisting of an aromatic compound as said starting material, a solvent capable of dissolving said aromatic compound, water, dinitrogen monoxide, and ammonia.

Abstract: A method of forming a photovoltaic element according to the present invention comprises at least the steps of depositing a metal layer on a supporting member, depositing a metal oxide layer on the above metal layer, and arranging at least one or more pin structures, each of which is formed by stacking the predetermined n-type, i-type and p-type semiconductor layers, on a substrate formed by stacking on the above supporting member, the above metal layer and the above metal oxide layer in this order, wherein a step of subjecting the supporting member having the metal layer formed thereon to heat treatment is carried out between the two steps of depositing the above metal layer and depositing the above metal oxide layer.

Abstract: In a deposited film forming system having at least a vacuum vessel, means for feeding a film-forming material gas into the vacuum vessel, a discharge electrode provided inside the vacuum vessel, used to make the material gas into a plasma, and a power supply conductor for applying a high-frequency power to the discharge electrode, the system comprises an earth shield so disposed as to surround the power supply conductor inside the vacuum vessel, and a plurality of dielectric materials at least part of which is disposed between the power supply conductor and the earth shield. A process carried out using the deposited film forming system is also disclosed. The system and process can maintain large-area and uniform discharge for a long time and can form deposited films having a high quality and a superior uniformity, on a beltlike substrate that moves continuously.