Patents by Inventor Hitomi Sato

Hitomi Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210275404
    Abstract: [Problem] Providing a whitened capsule and a whitened film without using any white pigment such as titanium dioxide. [Solution] Provided is a film, a capsule, and a film forming composition, characterized by comprising: a film-forming polymer; and a whitening agent including either a surfactant or both a surfactant and a salt, and characterized in that the surfactant is selected from a fatty acid ester of polyhydric alcohol, a polyethylene glycol, a polypropylene glycol, a polyalkylene oxide derivative, an alkyl sulfate ester salt, and a saponin.
    Type: Application
    Filed: July 3, 2019
    Publication date: September 9, 2021
    Applicant: Capsugel Belgium NV
    Inventors: Kaori Sato, Takahisa Takubo, Hitomi Doi
  • Publication number: 20210261163
    Abstract: An information processing device for managing a vehicle including a toilet unit, a tank unit connected to the toilet unit for storing waste that flows from the toilet unit, and a traveling unit capable of moving the toilet unit and the tank unit. The information processing device performs control for disconnecting the traveling unit from the toilet unit and the tank unit when installing a toilet. The information processing device includes a control unit configured to acquire a storage amount of waste in the tank unit and to generate commands to the traveling unit to cause the traveling unit to replace the tank unit when the storage amount of waste becomes equal to or larger than a predetermined amount.
    Type: Application
    Filed: January 29, 2021
    Publication date: August 26, 2021
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Mitsuyoshi Ohno, Daiki Kubo, Yosuke Nozaki, Tsukasa Nakanishi, Hironori Aoyama, Seiji Yogo, Tae Sugimura, Yasuhiro Kobatake, Shinya Kijima, Osamu Fukawatase, Koji Yasui, Toshiyuki Kobayashi, Hitomi Nakatani, Toshinari Ogawa, Kohta Tarao, Kuniaki Jinnai, Sayaka Ninoyu, Takeshi Yamada, Nobuki Hayashi, Masahiro Nagano, Ryo Sato, Akihiro Ito
  • Publication number: 20210230740
    Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
    Type: Application
    Filed: April 13, 2021
    Publication date: July 29, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Tetsunori MARUYAMA, Yuki IMOTO, Hitomi SATO, Masahiro WATANABE, Mitsuo MASHIYAMA, Kenichi OKAZAKI, Motoki NAKASHIMA, Takashi SHIMAZU
  • Patent number: 11066739
    Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: July 20, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tetsunori Maruyama, Yuki Imoto, Hitomi Sato, Masahiro Watanabe, Mitsuo Mashiyama, Kenichi Okazaki, Motoki Nakashima, Takashi Shimazu
  • Patent number: 10889888
    Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: January 12, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tetsunori Maruyama, Yuki Imoto, Hitomi Sato, Masahiro Watanabe, Mitsuo Mashiyama, Kenichi Okazaki, Motoki Nakashima, Takashi Shimazu
  • Patent number: 10527733
    Abstract: A position information common management system for a mobile object includes an information processing apparatus. The information processing apparatus is configured to receive information including position information and metadata as one set wirelessly transmitted from a plurality of position information sources respectively moving along with a plurality of mobile objects. When a request for transmission of position information constituting one set with specified metadata is received from an information terminal, the information processing apparatus is configured to search for a set including the specified metadata among the received sets each including the position information and the metadata. The information processing apparatus is configured to transmit position information of the searched set including the specified metadata and position information to the information terminal.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: January 7, 2020
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Shigeharu Teshima, Hitomi Sato
  • Patent number: 10522689
    Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: December 31, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshinari Sasaki, Hitomi Sato, Kosei Noda, Yuta Endo, Mizuho Ikarashi, Keitaro Imai, Atsuo Isobe, Yutaka Okazaki
  • Publication number: 20190185986
    Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
    Type: Application
    Filed: February 26, 2019
    Publication date: June 20, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Tetsunori MARUYAMA, Yuki IMOTO, Hitomi SATO, Masahiro WATANABE, Mitsuo MASHIYAMA, Kenichi OKAZAKI, Motoki NAKASHIMA, Takashi SHIMAZU
  • Publication number: 20180059249
    Abstract: A position information common management system for a mobile object includes an information processing apparatus. The information processing apparatus is configured to receive information including position information and metadata as one set wirelessly transmitted from a plurality of position information sources respectively moving along with a plurality of mobile objects. When a request for transmission of position information constituting one set with specified metadata is received from an information terminal, the information processing apparatus is configured to search for a set including the specified metadata among the received sets each including the position information and the metadata. The information processing apparatus is configured to transmit position information of the searched set including the specified metadata and position information to the information terminal.
    Type: Application
    Filed: August 16, 2017
    Publication date: March 1, 2018
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Shigeharu TESHIMA, Hitomi SATO
  • Patent number: 9812544
    Abstract: To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: November 7, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Hitomi Sato, Yuhei Sato
  • Publication number: 20170271519
    Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
    Type: Application
    Filed: May 25, 2017
    Publication date: September 21, 2017
    Inventors: Toshinari SASAKI, Hitomi SATO, Kosei NODA, Yuta ENDO, Mizuho IKARASHI, Keitaro IMAI, Atsuo ISOBE, Yutaka OKAZAKI
  • Patent number: 9666720
    Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: May 30, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshinari Sasaki, Hitomi Sato, Kosei Noda, Yuta Endo, Mizuho Ikarashi, Keitaro Imai, Atsuo Isobe, Yutaka Okazaki
  • Publication number: 20170016108
    Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
    Type: Application
    Filed: June 22, 2016
    Publication date: January 19, 2017
    Inventors: Shunpei YAMAZAKI, Tetsunori MARUYAMA, Yuki IMOTO, Hitomi SATO, Masahiro WATANABE, Mitsuo MASHIYAMA, Kenichi OKAZAKI, Motoki NAKASHIMA, Takashi SHIMAZU
  • Patent number: 9382611
    Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
    Type: Grant
    Filed: June 5, 2012
    Date of Patent: July 5, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tetsunori Maruyama, Yuki Imoto, Hitomi Sato, Masahiro Watanabe, Mitsuo Mashiyama, Kenichi Okazaki, Motoki Nakashima, Takashi Shimazu
  • Publication number: 20160064505
    Abstract: To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
    Type: Application
    Filed: November 9, 2015
    Publication date: March 3, 2016
    Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Hitomi SATO, Yuhei SATO
  • Patent number: 9202822
    Abstract: To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: December 1, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Hitomi Sato, Yuhei Sato
  • Patent number: 8889477
    Abstract: A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: November 18, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tetsunori Maruyama, Yuki Imoto, Hitomi Sato, Masahiro Watanabe, Mitsuo Mashiyama, Kenichi Okazaki, Motoki Nakashima, Takashi Shimazu
  • Patent number: 8841664
    Abstract: Provided is a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which a semiconductor film whose threshold voltage is difficult to control is used as an active layer. By using a silicon oxide film having a negative fixed charge as a film in contact with the active layer of the transistor or a film in the vicinity of the active layer, a negative electric field is always applied to the active layer due to the negative fixed charge and the threshold voltage of the transistor can be shifted in the positive direction. Thus, the highly reliable semiconductor device can be manufactured by giving stable electric characteristics to the transistor.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: September 23, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hitomi Sato, Takayuki Saito, Kosei Noda, Toru Takayama
  • Publication number: 20140239297
    Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
    Type: Application
    Filed: May 5, 2014
    Publication date: August 28, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshinari SASAKI, Hitomi SATO, Kosei NODA, Yuta ENDO, Mizuho IKARASHI, Keitaro IMAI, Atsuo ISOBE, Yutaka OKAZAKI
  • Patent number: 8748889
    Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: June 10, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshinari Sasaki, Hitomi Sato, Kosei Noda, Yuta Endo, Mizuho Ikarashi, Keitaro Imai, Atsuo Isobe, Yutaka Okazaki