Abstract: The present invention relates to a semiconductor encapsulating resin composition which is safe and superior in moisture resistance, flame retardance and moldability, and to a highly reliable semiconductor device which is fabricated by encapsulating a semiconductor element with such a semiconductor encapsulating resin composition. The resin composition according to the present invention comprises a thermosetting resin, a hardening agent and a compound metal hydroxide of polyhedral crystal form represented by the following general formula (1): m(MaOb).n(QdOe).cH2O  (1) [wherein M and Q are different metal elements; Q is a metal element which belongs to a group selected from IVa, Va, VIa, VIIa, VIII, Ib and IIb groups in the periodic table; m, n, a, b, c, d and e, which may be the same or different, each represents a positive number].

Abstract: A method of manufacturing a semiconductor and a lamination therefor, in which fixing materials are temporarily fixed to the molding faces of a mold through release films. The semiconductor element is then placed in the mold and molding resin is injected into the mold. The resin is heated to produce the semiconductor device. During this process, the fixing materials become embedded in each of the opposite surfaces of the resin.

Abstract: A process for producing a metal foil-covered semiconductor device. The metal foil material is one which is, in molding a resin for encapsulating a semiconductor element using a mold, temporarily fixed on a surface of a cavity of the mold, and is adhered on a surface of a semiconductor device by injecting the encapsulating resin into the mold and molding the resin, wherein a contact angle of the face of the metal foil material which is in contact with the encapsulating resin during molding, to water is 110.degree. or less.

Abstract: A method of producing a semiconductor device by encapsulating a semiconductor element with a resin, which comprises disposing a semiconductor element with lead frames and an encapsulating resin in a state of being sandwiched between a pair of films on a molding mold having a port for setting the encapsulating resin, closing the mold, pressing the encapsulating resin between the films in a heated state by a plunger vertically moving in the pot, and injecting the molten encapsulating resin in the inside of the mold cavity from the pot portion through a runner portion to encapsulate the semiconductor element with the encapsulating resin.

Abstract: A metal foil material for covering a semiconductor device, a semiconductor device covered with the metal foil material, and a process for producing the metal foil-covered semiconductor device are disclosed. The metal foil material is one which is, in molding a resin for encapsulating a semiconductor element using a mold, temporarily fixed on a surface of a cavity of the mold, and is adhered on a surface of a semiconductor device by injecting the encapsulating resin into the mold and molding the resin, wherein a contact angle of the face of the metal foil material which is in contact with the encapsulating resin during molding, to water is 110.degree. or less.

Abstract: A method of manufacturing a semiconductor and a lamination therefor, in which fixing materials are temporarily fixed to the molding faces of a mold through release films. The semiconductor element is then placed in the mold and molding resin is injected into the mold. The resin is heated to produce the semiconductor device. During this process, the fixing materials become embedded in each of the opposite surfaces of the resin.