Patents by Inventor Hitomi Yamamoto

Hitomi Yamamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230340691
    Abstract: Provided is a manufacturing method of a silicon single crystal according to the present invention includes a melting process for generating a silicon melt containing a primary dopant, and a crystal pulling-up process that pulls up a silicon single crystal from the silicon melt. The crystal pulling-up process includes at least one additional doping process for adding a dopant raw material containing a secondary dopant into the silicon melt. A flow rate of Ar gas during a first period in which the secondary dopant is not added is set as a first flow rate, and the flow rate of Ar gas during a second period that includes a period in which the secondary dopant is added is set as a second flow rate that is greater than the first flow rate..
    Type: Application
    Filed: September 21, 2021
    Publication date: October 26, 2023
    Applicant: SUMCO Corporation
    Inventors: Shogo KOBAYASHI, Norihito FUKATSU, Takahiro KANEHARA, Hitomi YAMAMOTO
  • Patent number: 5350859
    Abstract: Disclosed is a process for producing 3-hydroxymethyl-1-propargylimidazolidine-2,4-dione which comprises(i) reacting a compound of the formula (I) ##STR1## wherein R represents an alkyl, alkoxyalkyl or aralkyl group with a compound of the formula (II)CH.ident.C--CH.sub.2 --X (II)wherein X represents a leaving group in the presence of a base to give a 1-propargylimidazolidine-2,4-dione derivative of the formula (III) ##STR2## wherein R is as defined above and (ii) hydrolyzing this derivative of the formula (III).
    Type: Grant
    Filed: February 22, 1993
    Date of Patent: September 27, 1994
    Assignee: Sumotomo Chemical Company, Ltd.
    Inventors: Yoo Tanabe, Masanari Murakami, Hitomi Yamamoto
  • Patent number: 5224971
    Abstract: In a typical method of separating isotopes, a linear material is fed between electrodes arranged in a vacuum vessel. Joule heat is generated by supplying a current to the linear material. A vapor flow is produced by heating and evaporating the linear material. Only a specific isotope in the vapor flow is selectively ionized by radiating a laser beam on the vapor flow. The ionized isotope is separated by using at least one of electric and magnetic fields. A typical isotope separating apparatus includes a vacuum vessel, a material feeder, a power source system, a laser optical system, and an ion separating unit. The material feeder feeds a linear material containing a plurality of types of isotopes between electrodes in the vacuum vessel. The power source system supplies a current to the linear material to heat and evaporate it.
    Type: Grant
    Filed: June 21, 1991
    Date of Patent: July 6, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hidetoshi Mukaida, Hitomi Yamamoto, Motohisa Abe, Isao Imamura, Kazunori Shioda