Patents by Inventor Hitoshi Atari

Hitoshi Atari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6643115
    Abstract: Disclosed is an electrostatic chuck comprising a ceramic dielectric layer having a surface for placing thereon a work that is to be held, and an electrode provided on a surface opposite to the surface of the ceramic dielectric layer for placing the work thereon, wherein: the placing surface of the ceramic dielectric layer is sectionalized into an outer peripheral region and a central region by gas injection grooves extending in a circumferential manner; the surface roughness Ra(o) of the outer peripheral region of the placing surface and the surface roughness Ra(i) ot the central region satisfy the following conditions: 0.6≦Ra(i)≦1.5 &mgr;m Ra(o)≦0.7 &mgr;m Ra(i)≧Ra(o)  and the outer peripheral region of the placing surface is higher than the inner peripheral region by not less than 0.6 &mgr;m.
    Type: Grant
    Filed: February 27, 2002
    Date of Patent: November 4, 2003
    Assignee: Kyocera Corporation
    Inventors: Katsushi Sakaue, Shoji Kosaka, Ichio Kiyofuji, Junji Ohe, Masaki Terazono, Yasushi Migita, Naohito Higashi, Hitoshi Atari
  • Publication number: 20020176219
    Abstract: Disclosed is an electrostatic chuck comprising a ceramic dielectric layer having a surface for placing thereon a work that is to be held, and an eloctrode provided on a surface opposite to the surface of the ceramic dielectric layer for placing the work thereon, wherein:
    Type: Application
    Filed: February 27, 2002
    Publication date: November 28, 2002
    Inventors: Katsushi Sakaue, Shoji Kosaka, Ichio Kiyofuji, Junji Ohe, Masaki Terazono, Yasushi Migita, Naohito Higashi, Hitoshi Atari
  • Patent number: 5413360
    Abstract: An electrostatic chuck comprising a chucking body of a dielectric ceramics and an electrostatic inner electrode embedded in the chuck (first invention), the ceramics having a volume resistivity value not more than 10.sup.13 .OMEGA.cm at a high temperature not less than 250.degree. C. This electrostatic chuck can properly chuck, fix, carry and correct wafers even at a high temperature not less than 250.degree. C. in CVD, PVD or high temperature etching apparatuses.An electrostatic chuck comprising a chucking body of a single-crystalline sapphire and an electrostatic inner electrode embedded in the chuck (second invention). This electrostatic chuck is characterized by extremely small leak current, high mechanical strength and strong chucking force even in the temperature range of room temperature to 500.degree. C. and in the voltage range of 500 to 2000 V. With this electrostatic chuck, objects to be chucked, such as silicon wafers, are less contaminated.
    Type: Grant
    Filed: December 1, 1993
    Date of Patent: May 9, 1995
    Assignee: Kyocera Corporation
    Inventors: Hitoshi Atari, Kazuhiro Kuchimachi