Patents by Inventor Hitoshi Furusho

Hitoshi Furusho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11511316
    Abstract: There is provided a plasma annealing device that can change the crystal structure of a film by processing the film (coating) on a substrate and that has excellent productivity. A method for producing a film includes step (A) irradiating a film on a substrate with atmospheric pressure plasma, wherein the crystal structure of a constituent of the film is changed. The step (A) may include generating plasma under atmospheric pressure by energization at a frequency of 10 hertz to 100 megahertz and a voltage of 60 volts to 1,000,000 volts, and directly irradiating the film on the substrate with the generated plasma. A method for changing a crystal structure of a constituent of a film includes step (A). A plasma generation device used in step (A). An electronic device produced through step (A).
    Type: Grant
    Filed: October 31, 2011
    Date of Patent: November 29, 2022
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventor: Hitoshi Furusho
  • Patent number: 10975370
    Abstract: The present invention relates to a method for screening a nucleic acid aptamer comprising: (a) contacting a target molecule immobilized on a solid phase support with a nucleic acid aptamer candidate; (b) collecting the nucleic acid aptamer candidate binding with the target molecule by a capillary electrophoresis; and (c) amplifying the nucleic acid aptamer candidate by PCR.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: April 13, 2021
    Assignees: THE UNIVERSITY OF TOKYO, LINKBIO CO., LTD.
    Inventors: Keitaro Yoshimoto, Koji Wakui, Hitoshi Furusho
  • Publication number: 20200332281
    Abstract: The present invention relates to a method for screening a nucleic acid aptamer comprising: (a) contacting a target molecule immobilized on a solid phase support with a nucleic acid aptamer candidate; (b) collecting the nucleic acid aptamer candidate binding with the target molecule by a capillary electrophoresis; and (c) amplifying the nucleic acid aptamer candidate by PCR.
    Type: Application
    Filed: January 20, 2017
    Publication date: October 22, 2020
    Applicants: THE UNIVERSITY OF TOKYO, NISSAN CHEMICAL CORPORATION
    Inventors: Keitaro YOSHIMOTO, Koji WAKUI, Hitoshi FURUSHO
  • Patent number: 10640772
    Abstract: The objective of the present invention is to provide a DNA aptamer that can specifically binding to a molecular targeted medicine, a composition comprising the DNA aptamer, and a method for detecting a molecular targeted medicine using the DNA aptamer. A DNA aptamer comprising specifically binding to a molecular targeted medicine, a composition for detecting a molecular targeted medicine comprising the DNA aptamer, a kid for detecting a molecular targeted medicine, and a method for detecting a molecular targeted medicine comprising using the DNA aptamer.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: May 5, 2020
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventor: Hitoshi Furusho
  • Publication number: 20200056997
    Abstract: A detecting system detecting surface-enhanced Raman scattered light using surface-enhanced Raman scattering probe including: a light source emitting exciting light; first light splitting element reflecting light in a specific wavelength region, from among the exciting light incident from the light source at a specific angle; a sample which contains surface-enhanced Raman scattering probe and which emits scattered light by radiating reflected light from first light splitting element; a second light splitting element which is same or different to the first light splitting element, and which allows light in a wavelength region different from specific wavelength region to be transmitted therethrough when receiving scattered light; a light absorbing filter onto which transmitted scattered light impinges, and which allows Raman scattered light in a specific wavelength region to pass; and a light receiving component which detects enhanced Raman scattering when receiving Raman scattered light that has passed through
    Type: Application
    Filed: June 21, 2017
    Publication date: February 20, 2020
    Applicant: NISSAN CHEMICAL CORPORATION
    Inventor: Hitoshi FURUSHO
  • Publication number: 20190284560
    Abstract: The objective of the present invention is to provide a DNA aptamer that can specifically binding to a molecular targeted medicine, a composition comprising the DNA aptamer, and a method for detecting a molecular targeted medicine using the DNA aptamer. A DNA aptamer comprising specifically binding to a molecular targeted medicine, a composition for detecting a molecular targeted medicine comprising the DNA aptamer, a kid for detecting a molecular targeted medicine, and a method for detecting a molecular targeted medicine comprising using the DNA aptamer.
    Type: Application
    Filed: November 29, 2016
    Publication date: September 19, 2019
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventor: Hitoshi FURUSHO
  • Publication number: 20190225942
    Abstract: A scaffold material for cell culturing using a nucleic acid aptamer that can be chemically synthesized, containing no animal-derived components, and having high biocompatibility is provided. A cell scaffold material containing an E-cadherin binding nucleic acid aptamer.
    Type: Application
    Filed: August 22, 2017
    Publication date: July 25, 2019
    Applicants: NISSAN CHEMICAL CORPORATION, THE UNIVERSITY OF TOKYO
    Inventors: Hitoshi FURUSHO, Keitaro YOSHIMOTO, Ryo MARUYAMA
  • Patent number: 10160973
    Abstract: [Problem] To provide a novel nucleic acid aptamer for a vascular endothelial growth factor receptor, said nucleic acid aptamer being useful for the diagnosis and treatment of various diseases associated with VEGFs that can regulate angiogenesis and receptors for the VEGFs, e.g., tumor angiogenesis, diabetic retina and chronic rheumatoid arthritis. [Solution] A nucleic acid aptamer characterized by comprising a nucleotide sequence represented by any one of SEQ ID NOs: 1 to 5, and also characterized by being capable of bonding to a human VEGF receptor specifically. In a preferred embodiment of the nucleic acid aptamer, a primer recognition sequence, a fluorescent label, or a biotin molecule, an avidin molecule, a streptavidin molecule or other specific binding tag peptide may be linked to the 5?- or 3?-terminal of the nucleic acid aptamer for the purpose of making it possible to detect the nucleic acid aptamer easily.
    Type: Grant
    Filed: March 28, 2016
    Date of Patent: December 25, 2018
    Assignees: NISSAN CHEMICAL INDUSTRIES, LTD., THE UNIVERSITY OF TOKYO
    Inventors: Keitaro Yoshimoto, Keiko Kimura, Hitoshi Furusho
  • Patent number: 9994684
    Abstract: Described is a doping technique that forms a stable amorphous silicon film and a stable polycrystalline silicon film at a low temperature and simultaneously that imparts conductivity in an atmospheric pressure environment. A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method including: applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between flat plate electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances or compounds.
    Type: Grant
    Filed: April 20, 2015
    Date of Patent: June 12, 2018
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Hitoshi Furusho, Yuki Nohara, Hisayuki Watanabe, Yuichi Goto
  • Publication number: 20180066263
    Abstract: [Problem] To provide a novel nucleic acid aptamer for a vascular endothelial growth factor receptor, said nucleic acid aptamer being useful for the diagnosis and treatment of various diseases associated with VEGFs that can regulate angiogenesis and receptors for the VEGFs, e.g., tumor angiogenesis, diabetic retina and chronic rheumatoid arthritis. [Solution] A nucleic acid aptamer characterized by comprising a nucleotide sequence represented by any one of SEQ ID NOs: 1 to 5, and also characterized by being capable of bonding to a human VEGF receptor specifically. In a preferred embodiment of the nucleic acid aptamer, a primer recognition sequence, a fluorescent label, or a biotin molecule, an avidin molecule, a streptavidin molecule or other specific binding tag peptide may be linked to the 5?- or 3?-terminal of the nucleic acid aptamer for the purpose of making it possible to detect the nucleic acid aptamer easily.
    Type: Application
    Filed: March 28, 2016
    Publication date: March 8, 2018
    Applicants: NISSAN CHEMICAL INDUSTRIES, LTD., THE UNIVERSITY OF TOKYO
    Inventors: Keitaro YOSHIMOTO, Keiko KIMURA, Hitoshi FURUSHO
  • Publication number: 20180016582
    Abstract: The objective of the present invention is to provide a novel DNA aptamer useful for the diagnosis, treatment, and prevention of metastasis, and the like, of lung cancer.
    Type: Application
    Filed: February 5, 2016
    Publication date: January 18, 2018
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventor: Hitoshi FURUSHO
  • Publication number: 20150252152
    Abstract: Described is a doping technique that forms a stable amorphous silicon film and a stable polycrystalline silicon film at a low temperature and simultaneously that imparts conductivity in an atmospheric pressure environment. A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method including: applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between flat plate electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances or compounds.
    Type: Application
    Filed: April 20, 2015
    Publication date: September 10, 2015
    Inventors: Hitoshi FURUSHO, Yuki NOHARA, Hisayuki WATANABE, Yuichi GOTO
  • Patent number: 8896829
    Abstract: A metal nanoparticle material for molecular sensing, that includes a metal nanoparticle aggregate including three to ten metal nanoparticles connected to each other through an organic molecule so that adjacent metal nanoparticles are bonded and spaced apart a predetermined distance, the aggregate containing a Raman active molecule within a field applied to the aggregate, wherein the metal nanoparticle material emits enhanced Raman scattering light from the Raman active molecule in an enhanced electric field; a method for producing the metal nanoparticle material for molecular sensing; and a molecular sensing method using the metal nanoparticle material for molecular sensing.
    Type: Grant
    Filed: June 14, 2011
    Date of Patent: November 25, 2014
    Assignee: Nissan Chemical Industries, Ltd.
    Inventor: Hitoshi Furusho
  • Publication number: 20130224396
    Abstract: There is provided a plasma annealing device that can change the crystal structure of a film by processing the film (coating) on a substrate and that has excellent productivity. A method for producing a film includes step (A) irradiating a film on a substrate with atmospheric pressure plasma, wherein the crystal structure of a constituent of the film is changed. The step (A) may include generating plasma under atmospheric pressure by energization at a frequency of 10 hertz to 100 megahertz and a voltage of 60 volts to 1,000,000 volts, and directly irradiating the film on the substrate with the generated plasma. A method for changing a crystal structure of a constituent of a film includes step (A). A plasma generation device used in step (A). An electronic device produced through step (A).
    Type: Application
    Filed: October 31, 2011
    Publication date: August 29, 2013
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventor: Hitoshi Furusho
  • Publication number: 20130141719
    Abstract: There is provided a high-sensitive Raman scattering sensing by regulating in metal nanoparticles for enhanced Raman scattering, particularly the strength of the enhanced electric field by controlling the distance between the particles to impart very strong Raman scattering properties. A metal nanoparticle material for molecular sensing, the metal nanoparticle material comprising: a metal nanoparticle aggregate including three to ten metal nanoparticles connected to each other through an organic molecule so that adjacent metal nanoparticles are bonded and spaced apart a predetermined distance, the aggregate containing a Raman active molecule within a field applied to the aggregate, wherein the metal nanoparticle material emits enhanced Raman scattering light from the Raman active molecule in an enhanced electric field; a method for producing the metal nanoparticle material for molecular sensing; and a molecular sensing by use of the metal nanoparticle material for molecular sensing.
    Type: Application
    Filed: June 14, 2011
    Publication date: June 6, 2013
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventor: Hitoshi Furusho
  • Publication number: 20120318662
    Abstract: The present invention provides a doping technique that forms a stable amorphous silicon film and a stable polycrystalline silicon film at a low temperature and simultaneously that imparts conductivity in an atmospheric pressure environment. A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method included: applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between flat plate electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances or compounds.
    Type: Application
    Filed: December 23, 2010
    Publication date: December 20, 2012
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Hitoshi Furusho, Yuki Nohara, Hisayuki Watanabe, Yuichi Goto
  • Patent number: 8030438
    Abstract: A thiophene compound having a phosphate group, for example, one represented by the formula [1]. The compound has high resistance to heat and oxidation and can be improved in solubility or dispersibility in various solvents. (In the formula, R1 and R2 each independently represents, e.g., hydrogen, halogeno, cyano, or phenyl optionally substituted by W; and R3 to R6 each independently represents —OR7, SR8, or —NR92, provided that R7 to R9 each independently represents hydrogen, C1-10 alkyl, or phenyl optionally substituted by W and W represents halogeno, cyano, nitro, hydroxyl, mercapto, amino, formyl, carboxy, C1-10 alkyl, etc.
    Type: Grant
    Filed: May 16, 2006
    Date of Patent: October 4, 2011
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Nobuyuki Kakiuchi, Hitoshi Furusho, Naoki Otani, Tohru Minami, Tatsuo Okauchi
  • Patent number: 8008425
    Abstract: A thiophene compound having sulfonyl groups which is represented by the formula [1]. It has high heat resistance and high unsusceptibility to oxidation and can improve solubility and dispersibility in various solvents. [In the formula, R1 and R2 each independently represents hydrogen, halogeno, cyano, etc.; and R3 and R3? each independently represents C1-20 alkyl, C1-20 haloalkyl, phenyl optionally substituted by W, thienyl optionally substituted by W, etc. (W represents chlorine, etc.).
    Type: Grant
    Filed: July 11, 2006
    Date of Patent: August 30, 2011
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Nobuyuki Kakiuchi, Hitoshi Furusho, Naoki Otani, Tatsuo Okauchi, Naoki Nakaie
  • Patent number: 7803898
    Abstract: An aminoquinoxaline compound represented by the following formula (1a), and a polyaminoquinoxaline compound obtained by polymerizing the aminoquinoxaline compound, wherein R1 and R2 independently represent a hydrogen atom, a hydroxyl group, a C1-C10 alkyl group, a C1-C10 alkoxy group, or the like, R3 and R4 independently represent a hydrogen atom, a halogen atom, a cyano group, a nitro group, an amino group, a C1-C10 alkyl group, a C1-C10 alkoxy group or the like, and X1 represents —NH—R5—NH2 or —NH—R6.
    Type: Grant
    Filed: January 12, 2005
    Date of Patent: September 28, 2010
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Mikio Kasai, Hitoshi Furusho
  • Patent number: 7799894
    Abstract: An electrode for an energy storage device containing a polyaminoquinoxaline compound of the following formula (1a) is provided as having a highly densified energy level and being small in size and light in weight. R1 and R2 independently represent a hydrogen atom, a hydroxyl group, a C1-C10 alkyl group, a C1-C10 alkoxy group or the like, R3 and R4 independently represent a hydrogen atom, a halogen atom, a cyano group, a nitro group, an amino group, a C1-C10 alkyl group, a C1-C10 alkoxy group or the like, X1 represents —NH—R5—NH— or —NH—R6— wherein R5 and R6 independently represent a C1-C10 alkylene group, —C(O)CH2—, —CH2C(O)— or the like, and n is an integer of 2 or over.
    Type: Grant
    Filed: February 1, 2005
    Date of Patent: September 21, 2010
    Assignees: Yamaguchi University, Nissan Chemical Industries, Ltd.
    Inventors: Masayuki Morita, Nobuko Yoshimoto, Yasuaki Mukai, Mikio Kasai, Hitoshi Furusho