Abstract: A control circuit during an erase operation sets a voltage of a first line connected to a selected cell unit to a voltage larger than a voltage of a gate of a first transistor included in the selected cell unit by an amount of a first voltage, sets a voltage difference between a voltage of a first line connected to an unselected cell unit and a voltage of a gate of a first transistor included in the unselected cell unit to a second voltage which differs from the first voltage, applies in the selected cell unit and the unselected cell unit a third voltage to a gate of at least one of dummy memory transistors in a dummy memory string, and applies a fourth voltage to a gate of another one of the dummy memory transistors in the dummy memory string, the fourth voltage being lower than the third voltage.

Abstract: A memory cell comprises a first semiconductor layer, and a first conductive layer. The first semiconductor layer extends in a perpendicular direction with respect to a semiconductor substrate. The first conductive layer sandwiches a charge storage layer with the first semiconductor layer. A control circuit executes a first program operation and then executes a second program operation. The first program operation supplies a first voltage to the body of the memory cell and supplies a second voltage larger than the first voltage to the gate of the memory cell. The second program operation renders the body of the memory cell in a floating state and supplies a third voltage which is positive to the gate of the memory cell.

Abstract: A memory string is configured by a plurality of memory transistors and a spare memory transistor connected in series. Word lines are connected to gates of the memory transistors. A spare word line is connected to a gate of the spare memory transistor. The memory string comprises a first semiconductor layer, a charge storage layer, a plurality of first conductive layers, and a second conductive layer. The first semiconductor layer extends in a perpendicular direction with respect to a substrate. The charge storage layer surrounds a side surface of the first semiconductor layer. The plurality of first conductive layers surround a side surface of the first semiconductor layer with the charge storage layer interposed therebetween, and function as the word lines. The second conductive layer surrounds a side surface of the first semiconductor layer with the charge storage layer interposed therebetween, and functions as the spare word line.

Abstract: At the time of forming an image, a rise in a temperature of a drive motor generates distortion in a bottom of a optical box of an optical scanning apparatus. If an opening is formed on the optical box to release heat, the optical box becomes easily distorted. To solve such a problem, according to the present invention, the optical scanning apparatus includes a rib which crosses over the opening formed at the bottom of the optical box.

Abstract: A control circuit controls erase operation to erase data of memory transistors, correction write operation, and correction write verify operation. In the correction write operation, a erase threshold level of a memory transistor is moved to a positive threshold level after the erase operation. In the correction write verify operation, whether or not a threshold level of the result of the correction write operation reaches a first value is determined. In the correction write operation, the control circuit executes the correction write operation with respect to plural memory units connected to a common one of the bit lines as a group. The control circuit sequentially executes the correction write verify operation with respect to plural memory units in which the correction write operation is executed.

Abstract: A control circuit is configured to execute an erasing operation on a selected cell unit in a selected memory block. In the erasing operation, the control circuit raises the voltage of the bodies of the first memory transistors included in the selected cell unit to a first voltage, sets the voltage of the bodies of the first memory transistors included in the non-selected cell unit to a second voltage lower than the first voltage, and applies a third voltage equal to or lower than the second voltage to the gates of the first memory transistors included in the selected cell unit and the non-selected cell unit.

Abstract: A control circuit during an erase operation sets a voltage of a first line connected to a selected cell unit to a voltage larger than a voltage of a gate of a first transistor included in the selected cell unit by an amount of a first voltage, sets a voltage difference between a voltage of a first line connected to an unselected cell unit and a voltage of a gate of a first transistor included in the unselected cell unit to a second voltage which differs from the first voltage, applies in the selected cell unit and the unselected cell unit a third voltage to a gate of at least one of dummy memory transistors in a dummy memory string, and applies a fourth voltage to a gate of another one of the dummy memory transistors in the dummy memory string, the fourth voltage being lower than the third voltage.

Abstract: A nonvolatile semiconductor memory device comprises a plurality of memory blocks, each including a plurality of cell units and each configured as a unit of execution of an erase operation. Each of the cell units comprises a memory string, a first transistor, a second transistor, and a diode. The first transistor has one end connected to one end of the memory string. The second transistor is provided between the other end of the memory string and a second line. The diode is provided between the other end of the first transistor and a first line. The diode comprises a second semiconductor layer of a first conductivity type and a third semiconductor layer of a second conductivity type.

Abstract: A memory string is configured by a plurality of memory transistors and a spare memory transistor connected in series. Word lines are connected to gates of the memory transistors. A spare word line is connected to a gate of the spare memory transistor. The memory string comprises a first semiconductor layer, a charge storage layer, a plurality of first conductive layers, and a second conductive layer. The first semiconductor layer extends in a perpendicular direction with respect to a substrate. The charge storage layer surrounds a side surface of the first semiconductor layer. The plurality of first conductive layers surround a side surface of the first semiconductor layer with the charge storage layer interposed therebetween, and function as the word lines. The second conductive layer surrounds a side surface of the first semiconductor layer with the charge storage layer interposed therebetween, and functions as the spare word line.

Abstract: A semiconductor memory device comprises a memory unit having a first and a second port and including plural banks; a bank address conversion circuit operative to convert a first bank address fed from external into a second bank address different from the first bank address and operative to supply the first bank address to one of the first and second ports and supply the second bank address to the other of the first and second ports; and a write data conversion circuit operative to convert input data fed from external into write data different from the input data and operative to supply the input data to one of the first and second ports and supply the converted write data to the other of the first and second ports.

Abstract: According to one embodiment, a semiconductor memory device comprises a cell array, voltage generation circuits, and a control circuit. The cell array comprises memory cell strings. The voltage generation circuits are arranged below the cell array. Each of the memory cell strings comprises a semiconductor layer, control gates, and memory cell transistors. The semiconductor layer comprises a pair of pillar portions, and a connecting portion. The control gates intersect the pillar portion. The memory cell transistors are formed at intersections of the pillar portion and the control gates. In a write operation and a read operation, the control circuit does not drive voltage generation circuits which give noise to memory cell strings as a write target and a read target, and drives voltage generation circuits which do not give noise to the memory cell strings as the write target and the read target.

Abstract: A shift register includes a first flip-flop group composed of a plurality of cascaded first flip-flops, each first flip-flop having a first master latch and a first slave latch and having first and second transmission paths for transmitting a master clock and a slave clock, a second flip-flop group composed of a plurality of cascaded second flip-flops, each second flip-flop having a second master latch and a second slave latch which are each composed of a transistor with a relatively small transistor size and having a third transmission path connected to the first transmission path and a fourth transmission path connected to the second transmission path, and a transfer portion configured to transfer pieces of data held in the second flip-flops to one of the first master latches and the first slave latches of the first flip-flops.

Abstract: A shift register includes a first flip-flop group composed of a plurality of cascaded first flip-flops, each first flip-flop having a first master latch and a first slave latch and having first and second transmission paths for transmitting a master clock and a slave clock, a second flip-flop group composed of a plurality of cascaded second flip-flops, each second flip-flop having a second master latch and a second slave latch which are each composed of a transistor with a relatively small transistor size and having a third transmission path connected to the first transmission path and a fourth transmission path connected to the second transmission path, and a transfer portion configured to transfer pieces of data held in the second flip-flops to one of the first master latches and the first slave latches of the first flip-flops.

Abstract: A shift register includes a first flip-flop group composed of a plurality of cascaded first flip-flops, each first flip-flop having a first master latch and a first slave latch and having first and second transmission paths for transmitting a master clock and a slave clock, a second flip-flop group composed of a plurality of cascaded second flip-flops, each second flip-flop having a second master latch and a second slave latch which are each composed of a transistor with a relatively small transistor size and having a third transmission path connected to the first transmission path and a fourth transmission path connected to the second transmission path, and a transfer portion configured to transfer pieces of data held in the second flip-flops to one of the first master latches and the first slave latches of the first flip-flops.

Abstract: A optical scanning apparatus includes a surface emitting type laser diode, a collimator lens which converts the emitted laser beam into an substantially parallel laser beam, a stop member which shapes the substantially parallel laser beam into a desired shape, a polygon mirror which deflects and scans the shaped laser beam, an electro-optical crystal member which is provided in the optical path between the stop member and the polygon mirror, and deflects the shaped laser beam by an applied voltage, a light amount sensor which detects the amount of laser beam deflected by the electro-optical crystal member, and a light amount control unit which controls the amount of laser beam emitted from the laser diode while repeatedly comparing the detected light amount obtained from the light amount sensor with a light amount corresponding to a reference voltage for control light amount.

Abstract: A semiconductor integrated circuit includes logic circuits connected in a plurality of stages, a voltage-level inverting unit that is inserted in a signal transmission path of the logic circuits and inverts a voltage level input to the logic circuits, and an inversion-timing control unit that controls inversion timing for the voltage level inverted by the voltage-level inverting unit.

Abstract: A semiconductor integrated circuit includes logic circuits connected in a plurality of stages, a voltage-level inverting unit that is inserted in a signal transmission path of the logic circuits and inverts a voltage level input to the logic circuits, and an inversion-timing control unit that controls inversion timing for the voltage level inverted by the voltage-level inverting unit.

Abstract: A shift register includes a first flip-flop group composed of a plurality of cascaded first flip-flops, each first flip-flop having a first master latch and a first slave latch and having first and second transmission paths for transmitting a master clock and a slave clock, a second flip-flop group composed of a plurality of cascaded second flip-flops, each second flip-flop having a second master latch and a second slave latch which are each composed of a transistor with a relatively small transistor size and having a third transmission path connected to the first transmission path and a fourth transmission path connected to the second transmission path, and a transfer portion configured to transfer pieces of data held in the second flip-flops to one of the first master latches and the first slave latches of the first flip-flops.

Abstract: A semiconductor memory device comprises a memory unit having a first and a second port and including plural banks; a bank address conversion circuit operative to convert a first bank address fed from external into a second bank address different from the first bank address and operative to supply the first bank address to one of the first and second ports and supply the second bank address to the other of the first and second ports; and a write data conversion circuit operative to convert input data fed from external into write data different from the input data and operative to supply the input data to one of the first and second ports and supply the converted write data to the other of the first and second ports.

Abstract: A steering system includes a steering wheel, a steering angle sensor detecting a steering angle, a steering motor steering road-wheels, a reaction motor imparting a reaction force to the steering wheel, an ECU driving the steering motor with respect to a detected steering angle and a temperature detecting unit detecting temperatures of the steering motor, the reaction motor or a constituent member involved in the temperatures of the motors. When the temperature detected is larger than a predetermined value, the ECU performs such that a ratio of the rotating angle to the steering angle is made smaller than one that is to result when the temperature is equal to or smaller than the predetermined value, or a reaction force that is to be imparted to the steering wheel is made larger.