Abstract: A magnetoresistive effect element is produced by forming a first magnetic layer, a spacer layer including an insulating layer and a conductive layer which penetrates through the insulating layer and passes a current, on the first magnetic layer, and a second magnetic layer all of which or part of which is treated with ion, plasma or heat, on the formed spacer layer.

Abstract: The present inventors successfully introduced genes into stem cells of airway epithelial tissues using simian immunodeficiency virus vectors pseudotyped with F and HN, which are envelope glycoproteins of Sendai virus. Gene transfer into airway epithelial tissue stem cells using a vector of the present invention is useful for gene therapy of genetic respiratory diseases such as cystic fibrosis. Furthermore, it is possible to select respiratory organs such as the lungs as production tissues for providing proteins that are deficient due to genetic diseases.

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride.

Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

Abstract: A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.

Abstract: A magnetoresistive device includes a magnetoresistive film and a pair of electrodes for applying a sense current substantially perpendicularly to the magnetoresistive film. The magnetoresistive film includes a magnetization pinned film including a first ferromagnetic layer having a magnetization direction substantially pinned in one direction, a magnetization free film including a second ferromagnetic layer whose magnetization direction changes in accordance with an external magnetic field applied thereto, an intermediate layer formed between the magnetization pinned film and the magnetization free film and having an insulating film and a metal conduction portion extending in the film thickness direction of the insulating film, and a layer containing an electrovalent or covalent compound formed near the metal conduction portion.

Abstract: A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and an intermediate layer interposed therebetween. The intermediate layer has a conduction part disposed in an insulation layer and made of a magnetic metal material. The ferromagnetic film stacked on an upper side of the intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the magnetoresistive effect film.

Abstract: A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.

Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

Abstract: The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.

Abstract: A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and a nonmagnetic intermediate layer interposed therebetween. The nonmagnetic intermediate layer has a conduction part disposed in an insulation layer and made of a nonmagnetic metal material. The ferromagnetic film stacked on an upper side of the nonmagnetic intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the spin-valve magnetoresistive effect film.

Abstract: A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.

Abstract: It is made possible to provide a magnetic head that generates a sufficient high-frequency magnetic field for assisting recording operations, and a magnetic recording device that includes the magnetic head. A magnetic head includes: a recording magnetic pole; a return yoke magnetically coupled to the recording magnetic pole; and at least two spin torque oscillators provided near the recording magnetic pole.

Abstract: It is made possible to provide a magnetic head that can stabilize the high-frequency magnetic field generated from the spin torque oscillator. A magnetic head includes: first and second main magnetic poles; and a spin torque oscillator provided between the first and second main magnetic poles.

Abstract: It is made possible to restrict the variation of the oscillation frequency of a spin torque oscillator placed in the vicinity of the recording magnetic pole. A magnetic head includes: a recording magnetic pole to generate a recording magnetic field; a spin torque oscillator formed in the vicinity of the recording magnetic pole; and a magnetic field applying unit configured to apply a magnetic field to the spin torque oscillator. The magnetic field applied to the spin torque oscillator by the magnetic field applying unit is perpendicular to a recording magnetic field generated from the recording magnetic pole.

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.

Abstract: A high-frequency oscillator includes a high-frequency oscillation element having a magnetization pinned layer whose magnetization direction is pinned substantially in one direction, an oscillation layer formed of a magnetic material which generates a high-frequency oscillation phenomenon when a current is supplied, an intermediate layer provided between the magnetization pinned layer and the oscillation layer, the intermediate layer having an insulation layer and current paths which pass through the insulation layer in a thickness direction, and a pair of electrodes which supply a current perpendicularly to a plane of a stacked film including the magnetization pinned layer, the intermediate layer and the oscillation layer.

Abstract: According to one embodiment, a disk drive having a spin torque oscillator and designed to perform high frequency assisted writing. The disk drive has a magnetic disk, a magnetic head, a coil, and a drive current controller. The drive current controller controls a drive current to supply to the spin torque oscillator. To record data magnetically in the disk, the drive current controller supplies to the spin torque oscillator the drive current that changes in synchronism with the polarity inversion of the recording current supplied to the coil, which excites the recording magnetic pole of the magnetic head.

Abstract: According to one embodiment, a magnetic head having a head slider which holds a magnetic head unit including a heat-generating element for controlling the flying-height and a high-frequency oscillator for performing high-frequency assisted writing, and on which terminals connected to the magnetic head elements are used in the smallest number required. Terminals are mounted on the head slider and are connected to the magnetic head unit. The terminals include at least one current-supplying terminal that is connected to the heat-generating element serving to control the flying height and to the high-frequency oscillator.

Abstract: A magnetic recording head includes: a main magnetic pole; a laminated body; and a pair of electrodes operable to pass a current through the laminated body. The laminated body includes a first magnetic layer, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. A lamination direction of the laminated body is substantially parallel to a medium moving direction. In a first direction parallel to an air bearing surface and perpendicular to the lamination direction, the laminated body has a protruding portion that protrudes beyond an end of a surface of the main magnetic pole facing the laminated body.