Abstract: A sputtering apparatus according to the present invention includes a substrate holding means for holding substrates and gas introducing routes having a plurality of gas jetting ports arranged at a plurality of places surrounding the substrates, and characterized in that at least one of the gas introducing routes is provided with a gas introduction connecting port, and the number of gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than the number of gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports, or an aperture of each of the gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than an aperture of each of the gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports.

Abstract: A CVD apparatus for fabricating a titanium nitride thin film is provided. The apparatus comprises an evacuatable reaction vessel having an interior, a pumping apparatus capable of exhausting the reaction vessel and maintaining the interior of the reaction vessel at a prescribed pressure, a gas feeder for introducing a mixed gas into the reaction vessel, a substrate holder in the reaction vessel for holding a substrate to be coated with a titanium nitride thin film, and a heater for heating the substrate. The gas feeder is equipped with the following components: (a) a vaporizer for vaporizing tetrakis(dialkylamino)titanium (TDAAT) from a liquid source material, (b) a first flow controller capable of setting a flow rate of the vaporized TDAAT to any level within a range of 0.

Abstract: A method for fabricating a titanium nitride thin film in a reaction vessel on a surface of a substrate heated to a prescribed temperature, includes the steps of mixing tetrakis(dialkylamino)titanium (TDAAT) and a first carrier gas to create a first mixed gas; feeding the first mixed gas into the reaction vessel through a first set of nozzles; mixing an added gas reactive with the tetrakis(dialkylamino)titanium with a second carrier gas to create a second mixed gas; feeding the second mixed gas into the reaction vessel through a second set of nozzles; while controlling the flow rates of the TDAAT, added gas, firt and second carrier gases; and depositing a titanium nitride thin film by the first mixed gas and the second mixed gas while confining the pressure inside the reaction vessel to a range of 0.1-15 Pa.

Abstract: The present invention provides a method of depositing a titanium nitride thin film with good coverage even in a hole with a high aspect ratio by using tetrakisdialkylaminotitanium. In this method, a raw material gas of tetrakisdialkylaminotitanium is introduced into a reactor through a raw material gas introduction system. When the raw material gas is supplied to a substrate which is previously heated by a holder temperature control mechanism, predetermined thermally chemical reaction takes place to deposit a thin film consisting of titanium nitride as a main component. The pressure in the reactor is controlled by an exhaust system so as to be maintained at a predetermined value in the range of about 0.1 to 15 Pa.