Abstract: A current diffusion bonding apparatus (1) includes upper and lower electrodes (11, 12), which sandwich members to be bonded (M, M) and which are electrically conductible with the members to be bonded (M, M); a power supply unit (20), which supplies a current to the electrodes (11, 12); and a pressurizing unit (30), which applies a pressure to bonding surfaces S. If a temperature T detected by a temperature sensor (45) is a first set temperature T1 or lower, the pressurizing unit (30) applies a pressure to the bonding surfaces S while restricting the displacement of the members to be bonded (M, M), and if the temperature T exceeds the first set temperature T1, the pressurizing unit (30) applies a pressure based on the elastic force of a spring (35d), which elastically deforms according to the displacement of the members to be bonded (M, M), to the bonding surfaces S.

Abstract: The present invention is directed to a method for cleaning that performs ultrasonic cleaning of an object to be cleaned by using a cleaning tank having a bottom face with an inclination, the method for cleaning in which the object to be cleaned is cleaned by using a plurality of the cleaning tanks and making the cleaning tanks lying next to each other have bottom faces with inclinations in different directions. As a result, in cleaning of a wafer by ultrasonic cleaning, it is possible to eliminate cleaning nonuniformity of the wafer.

Abstract: The present invention provides a method for cleaning a semiconductor wafer, in which the method includes cleaning steps of HF cleaning, ozonated water cleaning and HF cleaning in this order at least one time, wherein in the HF cleaning carried out last in the method for cleaning the semiconductor wafer, cleaning is so carried out that an oxide film formed on a surface of the semiconductor wafer by the ozonated water is not entirely removed and to remain a part of a thickness thereof on the surface of the semiconductor wafer. As a result, a method for cleaning a semiconductor wafer in which a metal impurity level and a particle level can be reduced simultaneously in the cleaning of the semiconductor wafer is provided.

Abstract: The present invention is directed to a method for cleaning a semiconductor wafer which comprises filling a cleaning solution containing ammonia and aqueous hydrogen peroxide in a cleaning tank comprising a synthetic quartz material with an average Al concentration of 1 ppb or less, immersing the above-mentioned semiconductor wafer in the above-mentioned cleaning solution, and cleaning the above-mentioned semiconductor wafer so that a surface etching rate of the above-mentioned synthetic quartz by the above-mentioned cleaning solution becomes 0.3 nm/min or less, and according to this method, a cleaning method which can maintain the Al concentration in the ammonia and per-water cleaning solution to a low concentration and can improve surface cleanliness of the semiconductor wafer is provided.

Abstract: A current diffusion bonding apparatus (1) includes upper and lower electrodes (11, 12), which sandwich members to be bonded (M, M) and which are electrically conductible with the members to be bonded (M, M); a power supply unit (20), which supplies a current to the electrodes (11, 12); and a pressurizing unit (30), which applies a pressure to bonding surfaces S. If a temperature T detected by a temperature sensor (45) is a first set temperature T1 or lower, the pressurizing unit (30) applies a pressure to the bonding surfaces S while restricting the displacement of the members to be bonded (M, M), and if the temperature T exceeds the first set temperature T1, the pressurizing unit (30) applies a pressure based on the elastic force of a spring (35d), which elastically deforms according to the displacement of the members to be bonded (M, M), to the bonding surfaces S.

Abstract: The present invention provides a method for cleaning a semiconductor wafer, in which the method includes cleaning steps of HF cleaning, ozonated water cleaning and HF cleaning in this order at least one time, wherein in the HF cleaning carried out last in the method for cleaning the semiconductor wafer, cleaning is so carried out that an oxide film formed on a surface of the semiconductor wafer by the ozonated water is not entirely removed and to remain a part of a thickness thereof on the surface of the semiconductor wafer. As a result, a method for cleaning a semiconductor wafer in which a metal impurity level and a particle level can be reduced simultaneously in the cleaning of the semiconductor wafer is provided.

Abstract: The present invention is a method for cleaning a semiconductor wafer comprising the steps of cleaning the semiconductor wafer with an SC1 cleaning solution, cleaning the semiconductor wafer cleaned by the SC1 cleaning solution with hydrofluoric acid, and cleaning the semiconductor wafer cleaned by the hydrofluoric acid with ozonated water having an ozone concentration of 3 ppm or more, wherein an etching removal of the semiconductor wafer with the SC1 cleaning solution is made 0.1 to 2.0 nm, whereby a method for cleaning a semiconductor wafer in which worsening of the surface roughness of the wafer due to cleaning can be reduced and cleaning of the wafer can be carried out effectively can be provided.

Abstract: A surface treatment method includes covering a surface of a casting mold with a carbon film containing at least one type of nanocarbon selected from the group including carbon nanocoils, carbon nanotubes and carbon nanofilaments, and further applying fullerenes to that surface. With this surface treatment method being performed on a surface (a cavity surface, etc. of a casting mold) making contact with a molten casting material such as aluminum, etc., sticking of the molten casting material to the mold is inhibited, release resistance of the product is reduced, and release effectiveness is improved. The release effectiveness lasts longer than in the case of a conventional carbon film.

Abstract: A surface treatment method includes covering a surface of a casting mold with a carbon film containing at least one type of nanocarbon selected from the group consisting of carbon nanocoils, carbon nanotubes and carbon nanofilaments, and further applying fullerenes to that surface. With this surface treatment method being performed on a surface (a cavity surface, etc. of a casting mold) making contact with a molten casting material such as aluminum, etc., sticking of the molten casting material to the mold is inhibited, release resistance of the product is reduced, and release effectiveness is improved. The release effectiveness lasts longer than in the case of a conventional carbon film.

Abstract: A surface treatment method includes covering a surface of a casting mold with a carbon film containing at least one type of nanocarbon selected from the group of carbon nanocoils, carbon nanotubes and carbon nanofilaments, and further applying fullerenes to that surface. With this surface treatment method being performed on a surface (a cavity surface, etc. of a casting mold) making contact with a molten casting material such as aluminum, etc., sticking of the molten casting material to the mold is inhibited, release resistance of the product is reduced, and release effectiveness is improved. The release effectiveness lasts longer than in the case of a conventional carbon film.

Abstract: An ultrasonic cleaning apparatus having at least a cleaning tank; an ultrasonic wave transmitting tank; a vibrating plate placed at a bottom portion of the ultrasonic wave transmitting tank, the vibrating plate superposing the ultrasonic waves on the transmitting water with a transducer; and a holding jig for holding the object to be cleaned in the cleaning tank, the apparatus in which the object to be cleaned is ultrasonically cleaned by immersing the object to be cleaned held with the holding jig in the cleaning liquid accommodated in the cleaning tank, putting the cleaning tank into the transmitting water accommodated in the ultrasonic wave transmitting tank, and transmitting the ultrasonic waves superposed with the vibrating plate to the cleaning tank through the transmitting water, the apparatus comprising a transmitting tank oscillating mechanism for oscillating the ultrasonic wave transmitting tank in a horizontal plane.

Abstract: A surface treatment method includes covering a surface of a casting mold with a carbon film containing at least one type of nanocarbon selected from the group of carbon nanocoils, carbon nanotubes and carbon nanofilaments, and further applying fullerenes to that surface. With this surface treatment method being performed on a surface (a cavity surface, etc. of a casting mold) making contact with a molten casting material such as aluminum, etc., sticking of the molten casting material to the mold is inhibited, release resistance of the product is reduced, and release effectiveness is improved. The release effectiveness lasts longer than in the case of a conventional carbon film.

Abstract: An ultrasonic cleaning apparatus having at least a cleaning an ultrasonic wave transmitting tank a vibrating plate placed at a bottom portion of the ultrasonic wave transmitting tank, the vibrating plate superposing the ultrasonic waves on the transmitting water with a transducer; and a holding jig for holding the object to be cleaned in the cleaning tank, the apparatus in which the object to be cleaned is ultrasonically cleaned by immersing the object to be cleaned held with the holding jig in the cleaning liquid accommodated in the cleaning tank, putting the cleaning tank into the transmitting water accommodated in the ultrasonic wave transmitting tank, and transmitting the ultrasonic waves superposed with the vibrating plate to the cleaning tank through the transmitting water, the apparatus comprising a transmitting tank oscillating mechanism for oscillating the ultrasonic wave transmitting tank in a horizontal plane.