Abstract: An image forming apparatus includes a transport section that transports a recording material, a grasping section that grasps a remaining situation of a recording material remaining in a transport path through which the recording material is transported by the transport section, a reception section that receives, from a user, an input of the number of removed sheets of recording material removed from the transport path by the user in a case where the transport of the recording material by the transport section is stopped, and a start section that starts the stopped transport by the transport section based on the number of removed sheets input by the user.

Abstract: A spatial light modulation unit is used in an exposure apparatus that exposes an exposure pattern onto a photosensitive substrate while moving the photosensitive substrate in a scan direction. The spatial light modulation unit includes: a spatial light modulator having a plurality of elements; a controller that controls the plurality of elements in accordance with the exposure pattern; and a SLM substrate on which the spatial light modulator and the controller are provided. The controller is arranged side by side in the scan direction with respect to the spatial light modulator.

Abstract: A deposition method includes: forming an adsorption inhibiting region on an adsorption site formed on a substrate, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount; causing an area on the adsorption site, on which the adsorption inhibiting region is not formed, to adsorb a raw material gas; and depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma.

Abstract: An exposure apparatus exposes an object to pattern light generated by a spatial light modulator having a plurality of elements in accordance with drawing data. The exposure apparatus includes a data output unit configured to output the drawing data to the spatial light modulator, an illumination optical system configured to irradiate the spatial light modulator with illumination light, a first movable body configured to hold the object, a projection optical system configured to project an image of the pattern light generated by the spatial light modulator onto the object, a detection unit configured to detect the image of the pattern light that has been projected, and a determination unit configured to determine whether the spatial light modulator is capable of generating pattern light in accordance with the drawing data output from the data output unit, based on a detection result of the detection unit.

Abstract: An exposure apparatus includes an illumination optical system, a spatial light modulator illuminated by light from the illumination optical system, a projection optical system that irradiates an exposure target with light emitted from the spatial light modulator, a stage on which the exposure target is placed to perform a relative movement between the exposure target and the projection optical system relative to each other in a predetermined scanning direction, and a controller that has a storage in which information relating to exposure pattern is stored and controls exposure for the exposure target. The controller controls the exposure for the exposure target so that a first step of performing a first exposure based on the information relating to the exposure pattern and a second step of performing a second exposure based on at least a portion of the information relating to the exposure pattern used in the first step are executed.

Abstract: An exposure apparatus includes: an illumination optical system; a spatial light modulator; a projection optical system that illuminates an exposure target with light emitted from the spatial light modulator; and a stage where the exposure target is placed, wherein by the stage moving the exposure target in a predetermined scan direction, the light illuminates the exposure target by the projection optical system scans on the exposure target, the spatial light modulator includes a plurality of mirrors that rotates around a tilt axis extending in a direction orthogonal to both the scan and an optical axis directions of the projection optical system, the mirrors become an ON state by adjusting a tilt of each mirror relative to the scan direction and thereby emit light to the system, and the exposure apparatus includes an angle adjustment mechanism that adjusts a tilt angle of the spatial light modulator relative to the scan direction.

Abstract: To improve repulsion performance when a ball is hit by a racket. Grommets each include a strip-shaped portion and a cylinder portion protruding from one surface of the strip-shaped portion. The cylinder portion includes a plurality of ribs extending along an extending direction of a central axis of a cylinder main body. The plurality of ribs is constituted of first ribs protruding from an outer peripheral surface of the cylinder main body toward both sides in the extending direction of the strip-shaped portion, and second ribs protruding from the outer peripheral surface of the cylinder main body toward both sides in a direction orthogonal to the extending direction of the strip-shaped portion. Two or more of the first ribs are formed on each of the both sides in the extending direction of the strip-shaped portion, and one or more of the second ribs are formed on each of the both sides in the direction orthogonal to the extending direction of the strip-shaped portion.

Abstract: A substrate processing apparatus for performing a substrate processing on a substrate, includes a processing chamber having an internal space to accommodate the substrate, a substrate holder that holds the substrate in the internal space and rotates the substrate, a first nozzle mechanism swingable in the internal space and discharging a first processing gas to the substrate held by the substrate holder when the first nozzle mechanism swings, a second nozzle mechanism swingable in the internal space, separately from the first nozzle mechanism, and discharging a second processing gas to the substrate held by the substrate holder when the second nozzle mechanism swings, and a controller that controls the substrate holder and the first and second nozzle mechanisms. The controller, during the substrate processing, causes the first and second nozzle mechanisms to swing independently of each other in a state where the substrate is rotated by the substrate holder.

Abstract: A film deposition apparatus includes a rotary table disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.

Abstract: A plasma generation apparatus includes a housing fitted in a portion of an upper surface of a process chamber of a deposition apparatus and having a protruding portion having an elongated shape in a plan view and protruding upward from a bottom surface, a coil wound around a side surface of the protruding portion and having an elongated shape in the plan view, and an inclination adjustment mechanism configured to independently move upward and downward both ends in a longitudinal direction of the coil to change an inclination of the coil in the longitudinal direction.

Abstract: A substrate processing apparatus includes a processing chamber, a substrate support, and a plasma source configured to generate an electric field in a plasma processing region between a surface facing the substrate support and the substrate support. The substrate processing apparatus includes process gas nozzles via which a gas is delivered to the plasma processing region. The process gas nozzles includes a gas mixture nozzle via which a gas mixture of additive gas and a noble gas for forming the plasma is delivered. The process gas nozzles includes a noble gas nozzle via which the noble gas, which is not mixed with the additive gas, is delivered to flow along the facing surface. The noble gas nozzle is provided at a location closer to the facing surface than the gas mixture nozzle is.

Abstract: A method of depositing a silicon film on a recess formed in a surface of a substrate is provided. The substrate is placed on a rotary table in a vacuum vessel, so as to pass through first, second, and third processing regions in the vacuum vessel. An interior of the vacuum vessel is set to a first temperature capable of breaking an Si—H bond. In the first processing region, Si2H6 gas having a temperature less than the first temperature is supplied to form an SiH3 molecular layer on its surface. In the second processing region, a silicon atomic layer is exposed on the surface of the substrate, by breaking the Si—H bond in the SiH3 molecular layer. In the third processing region, by anisotropic etching, the silicon atomic layer on an upper portion of an inner wall of the recess is selectively removed.

Abstract: A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

Abstract: There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

Abstract: A substrate holding mechanism for holding a substrate placed on a stage which is rotatable with respect to a turntable, includes a substrate holding member, provided at a peripheral portion of the stage, fixed to a rotating shaft disposed below a surface on which the substrate is placed, and contactable to a side surface of the substrate placed on the stage, a biasing member having a first end fixed to the substrate holding member at a position closer to a center of the stage than the rotating shaft, and a second end fixed at a position separated from the substrate holding member toward the center of the stage and below the rotating shaft, and a pressing member configured to press upwardly a portion of the substrate holding member where the first end of the biasing member is fixed.

Abstract: A film deposition apparatus includes a process chamber, and a turntable disposed in the process chamber and configured to receive a substrate along a circumferential direction. At least one ozone gas supply part configured to supply ozone gas on the turntable is provided. A plate member is disposed to cover the ozone gas supply part. An ozone gas activator is disposed on or above an upper surface of the plate member and configured to activate the ozone gas.

Abstract: There is provided a rotation detection jig used for an apparatus in which a substrate is processed inside a processing container by rotating a mounting stand for a substrate provided on one surface side of a rotary table while revolving the mounting stand with rotation of the rotary table, and supplying a processing gas to a region through which the mounting stand passes, including: a rotating element configured to rotate about a rotation shaft of the mounting stand; an encoder main body configured to detect a rotation angle of the rotating element and configured to constitute a rotary encoder together with the rotating element; a fixing member configured to fix the encoder main body to a rotating portion including the rotary table; and a signal processing part provided in the rotating portion and configured to process a detection signal detected by the encoder main body.

Abstract: A method for depositing a silicon nitride film is provided. A silicon nitride film is deposited in a depression formed in a surface of a substrate from a bottom surface and a lateral surface by ALD toward a center of the depression in a lateral direction so as to narrow a space at the center of the depression. First nitrogen radicals are adsorbed into the depression immediately before a stage of filling the space at the center with the silicon nitride film deposited toward the center of the depression. A silicon-containing gas is adsorbed on the first nitrogen radical in the depression by physical adsorption. Second nitrogen radicals are supplied into the depression so as to release the silicon-containing gas from the first nitrogen radical and to cause the released silicon-containing gas to react with the second nitrogen radical, thereby depositing a silicon nitride film to fill the central space.

Abstract: A plasma generation apparatus includes a housing fitted in a portion of an upper surface of a process chamber of a deposition apparatus and having a protruding portion having an elongated shape in a plan view and protruding upward from a bottom surface, a coil wound around a side surface of the protruding portion and having an elongated shape in the plan view, and an inclination adjustment mechanism configured to independently move upward and downward both ends in a longitudinal direction of the coil to change an inclination of the coil in the longitudinal direction.

Abstract: A film forming method forms a silicon film on a substrate placed on a turntable which rotates and passes through first and second process regions that are mutually separated along a circumferential direction inside a vacuum chamber that is settable to a first temperature at which Si—H bond dissociation can occur. A film forming process includes forming a molecular layer of SiH3 on the substrate, by supplying a Si2H6 gas that is set to a second temperature higher than the first temperature during a time period in which the substrate passes through the first process region, and forming a molecular layer of SiCl3 on the substrate having the molecular layer of SiH3 formed thereon while causing the Si—H bond dissociation in the molecular layer of SiH3, by supplying a gas including silicon and chlorine during a time period in which the substrate passes through the second process region.