Patents by Inventor Hitoshi Kato

Hitoshi Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10790182
    Abstract: There is provided a substrate holding mechanism of holding a substrate in a predetermined substrate holding region on a susceptor, including: a substrate holding member installed around the substrate holding region and configured to be in contact with a lateral surface of the substrate mounted on the substrate holding region at a predetermined contact surface of the substrate holding member when the substrate holding member is rotated inward of the substrate holding region; a biasing part configured to apply a biasing force with respect to the substrate holding member such that the substrate holding member is brought into contact with the lateral surface of the substrate to hold the substrate; and a release member configured to apply a pressing force against the biasing force of the biasing part with respect to the substrate holding member such that the substrate holding member is released to vertically lift up the substrate.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: September 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hitoshi Kato
  • Patent number: 10787740
    Abstract: A film formation time setting method to be implemented when forming silicon-containing films on a plurality of substrates arranged on a rotary table includes a film thickness measuring step of performing a provisional film forming process for a provisional film formation time T×N, provisionally set up based on a cycle time T and a number of cycles N, measuring film thicknesses dN-1 of the silicon-containing films formed on the substrates at an end time of the (N-1)th cycle, measuring film thicknesses dN-1˜N of the silicon-containing films at an intermediate time between the (N-1)th cycle and the Nth cycle, and measuring film thicknesses dN of the silicon-containing films at an end time of the Nth cycle; and a film formation time specifying step of comparing the inter-plane uniformities of the silicon-containing films at the respective times to specify and set a film formation time for achieving an optimal inter-plane uniformity.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: September 29, 2020
    Assignee: Tokyo Electron Limited
    Inventor: Hitoshi Kato
  • Publication number: 20200286678
    Abstract: A planar transformer includes a coil substrate including a flexible substrate and multiple coils formed on the flexible substrate. The coil substrate is formed to have coil parts and coilless parts such that the coil parts have the coils and that the coilless parts do not have the coils, and the coil substrate is folded such that at least one of the coilless parts is sandwiched between two of the coil parts.
    Type: Application
    Filed: February 28, 2020
    Publication date: September 10, 2020
    Applicant: IBIDEN CO., LTD.
    Inventors: Haruhiko MORITA, Hitoshi MIWA, Shinobu KATO, Toshihiko YOKOMAKU, Hisashi KATO, Takahisa HIRASAWA, Tetsuya MURAKI, Takayuki FURUNO
  • Publication number: 20200287452
    Abstract: A motor coil substrate includes a coil substrate including a flexible substrate and multiple coils formed on the flexible substrate such that the coils are extending from a first end toward a second end on the opposite side with respect to the first end. The flexible substrate includes inner peripheral and outer peripheral flexible substrates such that the coils include outer peripheral coils formed on the outer peripheral flexible substrate and inner peripheral coils formed on the inner peripheral flexible substrate, that a number of the outer peripheral coils and a number of the inner peripheral coils are L, that an m-th outer peripheral coil of the outer peripheral coils is positioned on a m-th inner peripheral coil of the inner peripheral coils, and that the m-th outer peripheral coil and the m-th inner peripheral coil are connected to each other in parallel, where L and m are natural numbers.
    Type: Application
    Filed: February 28, 2020
    Publication date: September 10, 2020
    Applicant: IBIDEN CO., LTD.
    Inventors: Haruhiko MORITA, Hitoshi MIWA, Shinobu KATO, Toshihiko YOKOMAKU, Hisashi KATO, Takahisa HIRASAWA, Tetsuya MURAKI, Takayuki FURUNO
  • Patent number: 10756589
    Abstract: A motor coil includes a magnet structure, and a laminated coil substrate formed on the magnet structure and including coil substrates and adhesive layers alternately laminated. The coil substrates are formed by folding a printed wiring board including a resin substrate, a first conductor layer formed on a first surface of the resin substrate and forming coils, and a second conductor layer formed on a second surface on the opposite side with respect to the first surface and forming coils, and the adhesive layers include an adhesive layer including a magnetic sheet.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: August 25, 2020
    Assignee: IBIDEN CO., LTD.
    Inventors: Haruhiko Morita, Shinobu Kato, Hitoshi Miwa, Hisashi Kato, Toshihiko Yokomaku
  • Patent number: 10748758
    Abstract: A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: August 18, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Yutaka Takahashi, Kazumi Kubo
  • Publication number: 20200234997
    Abstract: A substrate processing method is implemented in a substrate processing apparatus including a processing chamber, a turntable on which a substrate is placed inside the processing chamber, and first and second gas supplies that supply first and second gases, respectively. The substrate processing method deposits a film, generated by a reaction between the first gas and the second gas, on the substrate in a first state where the substrate rotates and the turntable undergoes a clockwise orbital rotation around a rotating shaft so that the substrate passes through a region supplied with the first gas and thereafter passes through a region supplied with the second gas, and deposits the film on the substrate in a second state where the substrate rotates and the turntable undergoes a counterclockwise orbital rotation.
    Type: Application
    Filed: January 7, 2020
    Publication date: July 23, 2020
    Inventors: Hitoshi KATO, Yuji NISHINO
  • Publication number: 20200234774
    Abstract: A semiconductor memory device includes a block decoder having a sense node, and a control unit. The block decoder includes first and second transistors each connected between a first node and ground, a third transistor connected between a power source voltage and a second node, a fourth transistor connected between the first and second nodes and controlled by the same gate signal as the third transistor, a fifth transistor having a first terminal connected to the sense node and a gate connected to the second node through an inverter, and a latch circuit that switches the first transistor on and off according to its setting. The control unit determines the setting of the latch circuit, according to a logic level based on a voltage of the sense node during an operation in which the second and third transistors are turned off and the fourth transistor is turned on.
    Type: Application
    Filed: April 6, 2020
    Publication date: July 23, 2020
    Inventors: Koji KATO, Hitoshi SHIGA
  • Publication number: 20200199771
    Abstract: The purpose of the present invention is to further level the amount of polishing during electrolytic polishing of the inside of a hollow pipe. A holding frame for vertically holding a hollow pipe is pivotally supported on a rack so as to be vertically invertible about the vertical center of the hollow pipe. An electrode is inserted through the hollow pipe and a liquid buffer is disposed on each end of the hollow pipe. A valve mechanism is capable of switching a liquid supply/discharge circuit so as to supply an electrolyte via the liquid buffer positioned at the bottom and discharge the electrolyte via the liquid buffer positioned at the top whether it is before or after the inversion of the holding frame (inversion of the hollow pipe). During an electrolyte supply period before and after the inversion, an electrolytic treatment is as a matter of course carried out for a predetermined length of time. Although said switching by the valve mechanism may be manually performed, a control means may also be used.
    Type: Application
    Filed: January 24, 2019
    Publication date: June 25, 2020
    Inventors: Yoshiaki IDA, Takanori YAMAGUCHI, Vijay CHOUHAN, Keisuke NII, Goh MITOYA, Takao AKABORI, Ken-ichi MIYANO, Fukumi TAKAHASHI, Yasunori ANETAI, Hitoshi HAYANO, Hideaki MONJUSHIRO, Shigeki KATO, Takayuki SAEKI
  • Patent number: 10683573
    Abstract: A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.
    Type: Grant
    Filed: November 10, 2015
    Date of Patent: June 16, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hitoshi Kato, Shigehiro Miura, Hiroyuki Kikuchi, Katsuyoshi Aikawa
  • Publication number: 20200157683
    Abstract: A film-forming processing apparatus includes a first heater heating an entire heat treatment region of a substrate, a second heater heating the substrate to have an in-plane temperature distribution having a concentric shape, a gas supplier supplying a process gas to a rotary table; and a control part outputting a control signal for executing a first step of setting a rotation position of the rotary table such that the substrate on the rotary table is placed in a position corresponding to the second heater and forming the in-plane temperature distribution having the concentric shape on the substrate by heating the substrate by the second heater, and a second step of performing a film forming process on the substrate by rotating the rotary table in a state where a heating energy received by the substrate from the second heater is smaller than that in the first step.
    Type: Application
    Filed: January 23, 2020
    Publication date: May 21, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hitoshi KATO, Kazuhide HASEBE
  • Publication number: 20200161919
    Abstract: A coil substrate includes a flexible substrate, and a coil including a wiring and formed on the flexible substrate. The flexible substrate has a cut penetrating through the flexible substrate such that the cut is formed to extend along a portion of the coil.
    Type: Application
    Filed: November 15, 2019
    Publication date: May 21, 2020
    Applicant: IBIDEN CO., LTD.
    Inventors: Haruhiko MORITA, Hitoshi Miwa, Shinobu Kato, Toshihiko Yokomaku, Hisashi Kato, Takahisa Hirasawa, Tetsuya Muraki, Takayuki Furuno
  • Publication number: 20200140956
    Abstract: This application provides a kit or a device for detection of ovarian tumor, comprising a nucleic acid(s) for detecting a miRNA(s) in a sample from a subject, and a method for detecting ovarian tumor, comprising measuring the miRNA(s) in vitro.
    Type: Application
    Filed: April 27, 2018
    Publication date: May 7, 2020
    Applicants: TORAY INDUSTRIES, INC., NATIONAL CANCER CENTER
    Inventors: Yuho KIDA, Satoko KOZONO, Hiroko SUDO, Satoshi KONDOU, Junpei KAWAUCHI, Hitoshi NOBUMASA, Takahiro OCHIYA, Tomoyasu KATO
  • Publication number: 20200141001
    Abstract: A cleaning method for dry cleaning a susceptor disposed in a process chamber of a film deposition apparatus is provided. In the method, a protective member is placed on a substrate receiving region provided in the susceptor. A cleaning gas is supplied to the susceptor having the protective member placed on the substrate receiving region, thereby removing a film deposited on a surface of the susceptor by etching.
    Type: Application
    Filed: October 29, 2019
    Publication date: May 7, 2020
    Inventors: Hitoshi KATO, Makoto ISHIGO, Jun SATO
  • Patent number: 10643837
    Abstract: A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate. In the method, a first adsorption blocking region is formed by adsorbing first chlorine radicals such that an amount of adsorption increases upward from a bottom portion of the recessed pattern. A source gas that contains silicon and chlorine adsorbs on an adsorption site where the first adsorption site is not formed. A molecular layer of a silicon nitride film is deposited so as to have a V-shaped cross section. A second adsorption blocking region is formed by adsorbing second chlorine radicals on the molecular layer of the silicon nitride film. The molecular layer of the silicon nitride film is modified by nitriding the molecular layer while removing the second adsorption blocking region.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: May 5, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Yutaka Takahashi, Kazumi Kubo
  • Patent number: 10636648
    Abstract: A film deposition method for depositing a silicon nitride film of selectively depositing on a flat surface of a substrate between minute recesses including a chlorine radical adsorbing step of supplying a chlorine containing gas that is activated onto a front surface of the substrate to cause the chlorine radical to be adsorbed entirely on the front surface of the substrate, a nitriding step of supplying a nitriding gas that is activated onto the substrate on which the chlorine radical adsorbs, causing the chlorine radical adsorbing on the flat surface, and nitride the flat surface from among the front surface of the substrate so as to form a silicon adsorption site, and a raw gas adsorbing step of supplying a raw gas that contains silicon and chlorine onto the substrate so as to cause the raw gas to adsorb onto the silicon adsorption site.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: April 28, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Kazumi Kubo, Yutaka Takahashi, Hitoshi Kato
  • Patent number: 10629268
    Abstract: A semiconductor memory device includes a block decoder having a sense node, and a control unit. The block decoder includes first and second transistors each connected between a first node and ground, a third transistor connected between a power source voltage and a second node, a fourth transistor connected between the first and second nodes and controlled by the same gate signal as the third transistor, a fifth transistor having a first terminal connected to the sense node and a gate connected to the second node through an inverter, and a latch circuit that switches the first transistor on and off according to its setting. The control unit determines the setting of the latch circuit, according to a logic level based on a voltage of the sense node during an operation in which the second and third transistors are turned off and the fourth transistor is turned on.
    Type: Grant
    Filed: September 2, 2018
    Date of Patent: April 21, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Koji Kato, Hitoshi Shiga
  • Patent number: 10610325
    Abstract: A medical guidance apparatus includes a base assembly including a base ring having an inner circumference defining an opening; and a guide rotateably mateable with the base assembly, the guide including: a frame comprising: an inner circumference defining an opening; and an outer circumference, wherein, in a configuration where the guide is mated with the base assembly, the opening of the frame overlays the opening of the base ring; a gap extending from the inner circumference of the frame to the outer circumference of the frame; and an arc member including a first end integrally formed with the frame and a second end integrally formed with the frame, wherein the first end of the arc member is diametrically opposed to the second end of the arc member.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: April 7, 2020
    Assignee: Canon U.S.A., Inc.
    Inventors: Takahisa Kato, Luke McDonald Hydrick, Eric Penman Bogner, Barret Daniels, Hitoshi Nakamura, Devashree Desai, Federico Perego
  • Patent number: 10604837
    Abstract: A film deposition apparatus includes a process chamber having a substantially cylindrical shape, and a turntable to receive a substrate thereon provided in the process chamber. At least one gas nozzle extends toward a central axis of the turntable from an inner side wall of the process chamber above the turntable along a radial direction of the turntable. At least one side wall heater is provided to cover at least part of the inner side wall of the process chamber and/or at least part of a surrounding area of the central axis of the turntable in a wall-shaped manner.
    Type: Grant
    Filed: February 9, 2016
    Date of Patent: March 31, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Shigehiro Miura
  • Patent number: 10593541
    Abstract: A film deposition method is provided. In the method, an aminosilane gas is adsorbed on a surface of a substrate including a recess pattern. Next, a silicon oxide film is deposited on the surface of the substrate including the recess pattern by oxidizing the aminosilane gas adsorbed on the surface of the substrate using an oxidation gas. Then, the silicon oxide film is modified by supplying a mixed gas containing oxygen, argon and nitrogen to the silicon oxide film while activating the mixed gas by plasma.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: March 17, 2020
    Assignee: Tokyo Electron Limited
    Inventor: Hitoshi Kato