Abstract: To improve repulsion performance when a ball is hit by a racket. Grommets each include a strip-shaped portion and a cylinder portion protruding from one surface of the strip-shaped portion. The cylinder portion includes a plurality of ribs extending along an extending direction of a central axis of a cylinder main body. The plurality of ribs is constituted of first ribs protruding from an outer peripheral surface of the cylinder main body toward both sides in the extending direction of the strip-shaped portion, and second ribs protruding from the outer peripheral surface of the cylinder main body toward both sides in a direction orthogonal to the extending direction of the strip-shaped portion. Two or more of the first ribs are formed on each of the both sides in the extending direction of the strip-shaped portion, and one or more of the second ribs are formed on each of the both sides in the direction orthogonal to the extending direction of the strip-shaped portion.

Abstract: A film-forming method for forming a film on a substrate includes: (A) forming the film on the substrate by, in a process chamber, rotating the substrate, moving one of the substrate or a nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging a film-forming gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism; and (B) after (A), adjusting a film thickness of the film formed on the substrate by, in the process chamber, rotating the substrate, moving one of the substrate or the nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging an etching gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism.

Abstract: A substrate processing method includes: preparing a substrate having a recess on a surface thereof; supplying chlorine gas to the substrate, thereby forming an adsorption-inhibiting layer in the recess; supplying a source gas to the substrate, thereby forming a molecular layer of the source gas in the recess; and supplying a nitriding gas to the substrate, thereby nitriding the molecular layer formed in the recess. The source gas is a gas that is inhibited by the adsorption-inhibiting layer from the formation of the molecular layer in the recess. The formation of the adsorption-inhibiting layer includes: retaining, in a retaining portion, the chlorine gas before being supplied to the substrate, and generating chlorine radicals from the chlorine gas by irradiating, with an ultraviolet ray, the chlorine gas inside the retaining portion.

Abstract: A substrate processing method includes: preparing a substrate having a recess on a surface thereof; supplying chlorine gas to the substrate, thereby forming an adsorption-inhibiting layer in the recess; supplying a source gas to the substrate, thereby forming a molecular layer of the source gas in the recess; and supplying a nitriding gas to the substrate, thereby nitriding the molecular layer formed in the recess. The source gas is a gas that is inhibited by the adsorption-inhibiting layer from the formation of the molecular layer in the recess. The formation of the adsorption-inhibiting layer includes: retaining, in a retaining portion, the chlorine gas before being supplied to the substrate, and adjusting, by controlling a temperature of the chlorine gas in the retaining portion, at least one of a position or an amount of the adsorption-inhibiting layer to be formed.

Abstract: A substrate processing method according to an aspect of the present disclosure includes: preparing a substrate having a silicon film on a surface thereof; and supplying chlorine gas to the substrate, thereby etching the silicon film. The etching of the silicon film includes: retaining, in a retaining portion, the chlorine gas before being supplied to the substrate, and generating chlorine radicals from the chlorine gas by irradiating, with an ultraviolet ray, the chlorine gas inside the retaining portion.

Abstract: Structures with racket performance varied according to the configurations of cylindrical parts can be easily used. A grommet includes a cylindrical part which is mounted pierced through a through hole formed in a frame of a racket and through which a string passes. The string is extended in a tensioned state on the frame so as to form front and back faces as hitting faces. The cylindrical part includes a first formation section forming both sides of a central axis position of the cylindrical part and a second formation section rotationally shifted with reference to the central axis position by 90 degrees relative to the first formation section and forming both sides of the central axis position. One of the first and second formation sections is disposed on both sides in a front/back direction. The first and second formation sections each have a different rigidity.

Abstract: A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

Abstract: A cleaning method for cleaning an interior of a process chamber includes (A) carrying a substrate out of the interior of the process chamber, the substrate being subjected to film formation in a state in which the substrate is supported by a substrate support; and (B) after (A), cleaning at least one of the substrate support or a surrounding portion around the substrate support. The cleaning in (B) includes rotating the substrate support and moving one of the substrate support or a nozzle gas discharge mechanism relative to another of the substrate support or the nozzle gas discharge mechanism, in conjunction with discharging a cleaning gas toward at least one of the substrate support or the surrounding portion from the discharge hole of the nozzle gas discharge mechanism, thereby partially cleaning a film-formed region of at least one of the substrate support or the surrounding portion.

Abstract: A film-forming method for forming a film on a substrate, the film-forming method includes: (A) forming a film on a substrate by a first film-forming apparatus, and (B) moving the substrate provided with the film formed in the (A) to a second film-forming apparatus different from the first film-forming apparatus and forming a film over the substrate by the second film-forming apparatus. In the (B), the substrate is rotated inside a process chamber, one of the substrate or a nozzle gas discharge mechanism is moved relative to another of the substrate or the nozzle gas discharge mechanism such that a discharge hole of the nozzle gas discharge mechanism passes over a center of the substrate, and a processing gas is discharged from the discharge hole toward the substrate, thereby adjusting a film thickness of the film to be formed over the substrate.

Abstract: A film-forming method for forming a film on a substrate includes: (A) forming the film on the substrate by, in a process chamber, rotating the substrate, moving one of the substrate or a nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging a film-forming gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism; and (B) after (A), adjusting a film thickness of the film formed on the substrate by, in the process chamber, rotating the substrate, moving one of the substrate or the nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging an etching gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism.

Abstract: A film-forming method for forming a film on a substrate includes (A) forming the film on the substrate by, in a process chamber, rotating the substrate, moving one of the substrate or a nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism such that a discharge hole of the nozzle gas discharge mechanism passes over a center of the substrate, and discharging a processing gas toward the substrate from the discharge hole; and (B) changing a discharge condition of the processing gas from that in (A), and adjusting a film thickness of the film formed on the substrate by, in the process chamber, rotating the substrate, moving one of the substrate or the nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging the processing gas toward the substrate from the discharge hole.

Abstract: A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.

Abstract: A substrate-processing method for processing a substrate includes (A) holding the substrate by a substrate holder in a process chamber and rotating the substrate; (B) discharging gas from a discharge hole of a nozzle gas discharge mechanism toward the substrate that is rotating in (A); and (C) moving the nozzle gas discharge mechanism relative to the substrate in a direction parallel to a surface of the substrate held by the substrate holder so that the discharge hole passes through a center of the substrate. In (B), a flow rate of the gas discharged from the discharge hole is changed in accordance with a surface area of a section of the substrate, the section being faced by the discharge hole of the nozzle gas discharge mechanism that is moving relative to the substrate in (C).

Abstract: A substrate-processing method for processing a substrate includes (A) holding the substrate by a substrate holder in a process chamber and rotating the substrate, (B) discharging gas from a discharge hole of a nozzle gas discharge mechanism toward the substrate held by the substrate holder, and (C) moving the nozzle gas discharge mechanism relative to the substrate in a direction parallel to a surface of the substrate held by the substrate holder so that the discharge hole passes over a center of the substrate. In (C), a speed of a relative movement of the nozzle gas discharge mechanism is changed in accordance with a surface area of a section of the substrate, the section being faced by the discharge hole.

Abstract: A substrate processing apparatus includes a processing chamber, a turntable rotatably provided inside the processing chamber, a plurality of placing tables rotatable with respect to the turntable and placed with a plurality of substrates, respectively, at positions separated from a rotation center of the turntable, and a plurality of nozzles disposed at positions passing centers of the plurality of placing tables as the turntable rotates. The plurality of nozzles include a processing gas discharger configured to discharge a processing gas with respect to the plurality of substrates on the plurality of placing tables that move with the rotation of the turntable, in a radial range shorter than a radius of the plurality of substrates, and a gas suction section configured to suck a gas at an outer side of the processing gas discharger.

Abstract: A liquid atomizing apparatus includes: an atomizing body member made of a porous body having micropores connected in a three-dimensional network, the atomizing body member having a surface including a part serving as a gas pressurized-inflow surface and another part serving as a gas release surface; a liquid supply unit for supplying a liquid to the atomizing body member, the liquid being to be impregnated into the micropores of the atomizing body member; and a gas supply unit for setting gas pressure on the gas pressurized-inflow surface of the atomizing body member to be higher than on the gas release surface of the atomizing body member and injecting the gas into the micropores of the atomizing body member through the gas pressurized-inflow surface, and releasing a mist of the liquid having been impregnated in the micropores together with the gas from the gas release surface.

Abstract: A substrate-processing method includes a) providing a substrate in which a recess is formed, where the substrate has a surface where a silicon oxide film is exposed, and b) generating a plasma using a gas mixture to etch the silicon oxide film with the plasma, where the gas mixture includes a trifluoromethane gas, an oxygen-containing gas, and a hydrogen-containing gas.

Abstract: A method for adjusting the oxidation or nitriding amount in a substrate process within a process chamber is disclosed. It involves providing a process chamber with a housing, a susceptor for holding the substrate, and an antenna member extending radially from the susceptor's center towards its outer periphery. A process gas supply unit is placed between the housing's bottom exterior and the susceptor's upper surface. The antenna member's shape on the central axis and outer peripheral sides of the susceptor is determined based on the tendencies for the oxidizing amount to decrease and increase, respectively, with increasing distance from the housing's bottom inside. The antenna is deformed based on the determined shape to adjust the oxidation or nitriding amount of the substrate process.

Abstract: A plasma processing apparatus includes a process chamber. A turntable is disposed in the process chamber and is configured to receive a substrate along a circumferential direction thereof. A process gas supply nozzle is configured to supply a process gas to the turntable. A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle. An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber.

Abstract: A deposition method includes: forming an adsorption inhibiting region on an adsorption site formed on a substrate, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount; causing an area on the adsorption site, on which the adsorption inhibiting region is not formed, to adsorb a raw material gas; and depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma.