Patents by Inventor Hitoshi Kato

Hitoshi Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11158385
    Abstract: A semiconductor memory device includes a block decoder having a sense node, and a control unit. The block decoder includes first and second transistors each connected between a first node and ground, a third transistor connected between a power source voltage and a second node, a fourth transistor connected between the first and second nodes and controlled by the same gate signal as the third transistor, a fifth transistor having a first terminal connected to the sense node and a gate connected to the second node through an inverter, and a latch circuit that switches the first transistor on and off according to its setting. The control unit determines the setting of the latch circuit, according to a logic level based on a voltage of the sense node during an operation in which the second and third transistors are turned off and the fourth transistor is turned on.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: October 26, 2021
    Assignee: KIOXIA CORPORATION
    Inventors: Koji Kato, Hitoshi Shiga
  • Patent number: 11155918
    Abstract: A film forming apparatus includes: first and second processing gas supply parts configured to supply first and second processing gases, respectively; a plasma-generating gas supply part configured to supply a plasma-generating gas; a plasma forming part configured to convert the plasma-generating gas into plasma; a receiving vessel inserted into an opening formed in a ceiling portion of a vacuum vessel, the receiving vessel having a bottom surface portion facing a rotary table and being engaged with the plasma forming part on an upper surface of the bottom surface portion; a dielectric shield member arranged between the receiving vessel and an inner peripheral surface of the opening; a height adjustment part configured to adjust an arrangement height position of the bottom surface portion; and one or more sealing parts configured to hermetically close a space between the vacuum vessel and the receiving vessel.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: October 26, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hitoshi Kato
  • Patent number: 11136669
    Abstract: A film formation apparatus includes a rotary table provided in a processing container; a mounting table mounting a substrate and revolved by rotation of the rotary table; a film formation gas supply part configured to supply a film formation gas to a region through which the mounting table passes by the rotation of the rotary table; a spinning shaft rotatably provided on a portion rotating together with the rotary table; a driven gear provided on the spinning shaft; a driving gear configured to rotate while facing a revolution orbit of the driven gear and provided along an entire circumference of the revolution orbit so as to constitute a magnetic gear mechanism with the driven gear, and a relative-distance-changing mechanism configured to change a relative distance between the revolution orbit of the driven gear and the driving gear.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: October 5, 2021
    Assignee: TOKYO ELECTRON LIMIIED
    Inventors: Hitoshi Kato, Takeshi Kobayashi, Toshiyuki Nakatsubo
  • Patent number: 11118265
    Abstract: A film deposition method includes steps of: placing a substrate in a substrate receiving area of a susceptor provided in a vacuum chamber; evacuating the vacuum chamber; alternately supplying plural kinds of reaction gases to the substrate in the substrate receiving area from corresponding reaction gas supplying parts thereby to form a thin film on the substrate; supplying plasma including a chemical component that reacts with second reaction gas adsorbed on the substrate from a plasma generation part to the substrate when the thin film is being formed, thereby to alter the thin film on the substrate; and changing plasma intensity of the plasma supplied to the substrate, at a predetermined point of time to a different plasma intensity of the plasma that is generated and supplied to the substrate by the plasma generation part before the predetermined point of time.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: September 14, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Shigenori Ozaki, Hitoshi Kato, Takeshi Kumagai
  • Patent number: 11118267
    Abstract: A method of processing a substrate, includes: mounting at least one substrate on at least one substrate holder configured to rotate about an axis of the at least one substrate holder, the at least one substrate holder being provided along a circumferential direction of a rotary table installed inside a processing chamber; holding the at least one substrate by the at least one substrate holder in a contact manner by bringing a substrate contact portion into contact with at least three points on a lateral surface of the at least one substrate mounted on the at least one substrate holder; and performing a substrate process while rotating the rotary table and rotating the at least one substrate holder about the axis of the at least one substrate holder in a state where the at least one substrate is held by the at least one substrate holder in the contact manner.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: September 14, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hitoshi Kato, Toshiyuki Nakatsubo, Takeshi Kobayashi, Tomoya Hasegawa
  • Publication number: 20210277289
    Abstract: Conventionally, there was a need to add a large amount of electroconductive particles for improving conductivity, but when the electroconductive particles were added too much, initial viscosity was increased, and at the same time, it was difficult to stabilize preservation stability. However, conductivity can be improved without adding a large amount of the electroconductive particles by selecting a monomer, and at the same time, preservation stability can be stabilized by using certain electroconductive particles. A thermocurable electroconductive adhesive including components (A) to (D): component (A): an oligomer having a (meth)acryl group; component (B): a monomer having one methacryl group in a molecule; component (C): an organic peroxide having a specific structure; and component (D): electroconductive particles which are surface-treated with a stearic acid.
    Type: Application
    Filed: August 17, 2017
    Publication date: September 9, 2021
    Applicant: THREEBOND CO., LTD.
    Inventors: Tomoya KODAMA, Soichi OTA, Masayuki OSADA, Hitoshi MAFUNE, Makoto KATO, Kanako MORII
  • Publication number: 20210249235
    Abstract: A substrate holding mechanism for holding a substrate placed on a stage which is rotatable with respect to a turntable, includes a substrate holding member, provided at a peripheral portion of the stage, fixed to a rotating shaft disposed below a surface on which the substrate is placed, and contactable to a side surface of the substrate placed on the stage, a biasing member having a first end fixed to the substrate holding member at a position closer to a center of the stage than the rotating shaft, and a second end fixed at a position separated from the substrate holding member toward the center of the stage and below the rotating shaft, and a pressing member configured to press upwardly a portion of the substrate holding member where the first end of the biasing member is fixed.
    Type: Application
    Filed: January 14, 2021
    Publication date: August 12, 2021
    Inventors: Hitoshi KATO, Toshiyuki NAKATSUBO, Takeshi KOBAYASHI
  • Publication number: 20210249264
    Abstract: A film forming method forms a silicon film on a substrate placed on a turntable which rotates and passes through first and second process regions that are mutually separated along a circumferential direction inside a vacuum chamber that is settable to a first temperature at which Si—H bond dissociation can occur. A film forming process includes forming a molecular layer of SiH3 on the substrate, by supplying a Si2H6 gas that is set to a second temperature higher than the first temperature during a time period in which the substrate passes through the first process region, and forming a molecular layer of SiC3 on the substrate having the molecular layer of SiH3 formed thereon while causing the Si—H bond dissociation in the molecular layer of SiH3, by supplying a gas including silicon and chlorine during a time period in which the substrate passes through the second process region.
    Type: Application
    Filed: January 15, 2021
    Publication date: August 12, 2021
    Inventor: Hitoshi KATO
  • Publication number: 20210246550
    Abstract: A film deposition apparatus includes a rotary cable disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.
    Type: Application
    Filed: February 1, 2021
    Publication date: August 12, 2021
    Inventors: Hitoshi KATO, Toru ISHII, Yuji SESHIMO, Yuichiro SASE
  • Publication number: 20210249265
    Abstract: A method of depositing a silicon film on a recess formed in a surface of a substrate is provided. The substrate is placed on a rotary table in a vacuum vessel, so as to pass through first, second, and third processing regions in the vacuum vessel. An interior of the vacuum vessel is set to a first temperature capable of breaking an Si—H bond. In the first processing region, Si2H6 gas having a temperature less than the first temperature is supplied to form an SiH3 molecular layer on its surface. In the second processing region, a silicon atomic layer is exposed on the surface of the substrate, by breaking the Si—H bond in the SiH3 molecular layer. In the third processing region, by anisotropic etching, the silicon atomic layer on an upper portion of an inner wall of the recess is selectively removed.
    Type: Application
    Filed: January 22, 2021
    Publication date: August 12, 2021
    Inventor: Hitoshi KATO
  • Patent number: 11085113
    Abstract: A film forming apparatus includes a rotary table having a loading area at a first surface side thereof and revolving a substrate loaded on the loading area, a rotation mechanism rotating the loading area such that the substrate rotates around its axis, a processing gas supply mechanism supplying a processing gas to a processing gas supply area so that a thin film is formed on the substrate which repeatedly passes through the processing gas supply area the revolution of the substrate, and a control part configured to perform a calculation of a rotation speed of the substrate based on a parameter including a rotation speed of the rotary table to allow an orientation of the substrate to be changed whenever the substrate is positioned in the processing gas supply area, and to output a control signal for rotating the substrate at a calculated rotation speed.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: August 10, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hitoshi Kato, Shigehiro Miura, Hiroyuki Kikuchi, Katsuyoshi Aikawa
  • Patent number: 11075074
    Abstract: A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate with a silicon nitride film. In the method, a first silicon nitride film is deposited in the recessed pattern formed in the surface of the substrate. The first silicon nitride film has a V-shaped cross section decreasing its film thickness upward from a bottom portion of the recessed pattern. A second silicon nitride film conformal to a surface shape of the first silicon nitride film is deposited.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: July 27, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Yutaka Takahashi, Kazumi Kubo
  • Patent number: 10974100
    Abstract: A racket includes: a grip; an annular frame; and a shaft coupling the grip and the frame together; wherein a projection is provided to an outer peripheral face on a leading end half of the frame in a predetermined range including a location of maximum curvature in a peripheral direction.
    Type: Grant
    Filed: April 27, 2017
    Date of Patent: April 13, 2021
    Assignee: YONEX KABUSHIKI KAISHA
    Inventors: Naoto Ogawa, Masato Kawabata, Hitoshi Kato, Tsutomu Takahashi
  • Publication number: 20210087684
    Abstract: A deposition apparatus according to one aspect of the present disclosure includes a processing chamber and a rotary table provided in the processing chamber. Above the rotary table, a raw material gas supply section, auxiliary gas supply sections, and a gas exhaust section are provided. The raw material gas supply section extends in a radial direction of the rotary table. The auxiliary gas supply sections are provided on a downstream side of a rotational direction of the rotary table with respect to the raw material gas supply section, and are arranged in the radial direction of the rotary table. The gas exhaust section is provided on the downstream side of the rotational direction of the rotary table with respect to the auxiliary gas supply sections, and extends in the radial direction of the rotary table.
    Type: Application
    Filed: September 10, 2020
    Publication date: March 25, 2021
    Inventors: Yu SASAKI, Toshihiko JO, Hitoshi KATO, Kosuke TAKAHASHI
  • Patent number: 10920316
    Abstract: A substrate processing apparatus includes a process chamber, and a turntable disposed in the process chamber. A surface of the turntable receives a substrate along a circumferential direction. A process gas supply part includes a process gas discharge surface configured to supply a process gas to the turntable. A space partition extends from the process gas discharge surface toward a downstream side of the process gas discharge surface in a rotational direction of the turntable and is configured to cover a part of the turntable and to form a lower space and an upper space. An exhaust duct is disposed downstream of the space partition and extends along a radial direction of the turntable. The exhaust duct has a lower exhaust opening in its lateral surface lower than the space partition. An upper exhaust opening is disposed higher than the space partition.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: February 16, 2021
    Assignee: Tokyo Electron Limited
    Inventor: Hitoshi Kato
  • Patent number: 10844487
    Abstract: A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, an adsorption blocking group is formed by adsorbing chlorine gas activated by plasma on a top surface of the substrate and an upper portion of the recessed pattern. A source gas that contains one of silicon and a metal, and chlorine, is adsorbed on a lower portion of the recessed pattern where the adsorption blocking group is not formed, by supplying the source gas to the surface of the substrate including the recessed pattern. A molecular layer of a nitride film produced by a reaction of the source gas and a nitriding gas is deposited on the lower portion of the trench by supplying the nitriding gas to the surface of the substrate including the recessed pattern.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: November 24, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Yutaka Takahashi, Masahiro Murata, Hitoshi Kato
  • Patent number: 10787740
    Abstract: A film formation time setting method to be implemented when forming silicon-containing films on a plurality of substrates arranged on a rotary table includes a film thickness measuring step of performing a provisional film forming process for a provisional film formation time T×N, provisionally set up based on a cycle time T and a number of cycles N, measuring film thicknesses dN-1 of the silicon-containing films formed on the substrates at an end time of the (N-1)th cycle, measuring film thicknesses dN-1˜N of the silicon-containing films at an intermediate time between the (N-1)th cycle and the Nth cycle, and measuring film thicknesses dN of the silicon-containing films at an end time of the Nth cycle; and a film formation time specifying step of comparing the inter-plane uniformities of the silicon-containing films at the respective times to specify and set a film formation time for achieving an optimal inter-plane uniformity.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: September 29, 2020
    Assignee: Tokyo Electron Limited
    Inventor: Hitoshi Kato
  • Patent number: 10790182
    Abstract: There is provided a substrate holding mechanism of holding a substrate in a predetermined substrate holding region on a susceptor, including: a substrate holding member installed around the substrate holding region and configured to be in contact with a lateral surface of the substrate mounted on the substrate holding region at a predetermined contact surface of the substrate holding member when the substrate holding member is rotated inward of the substrate holding region; a biasing part configured to apply a biasing force with respect to the substrate holding member such that the substrate holding member is brought into contact with the lateral surface of the substrate to hold the substrate; and a release member configured to apply a pressing force against the biasing force of the biasing part with respect to the substrate holding member such that the substrate holding member is released to vertically lift up the substrate.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: September 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hitoshi Kato
  • Patent number: 10748758
    Abstract: A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: August 18, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Yutaka Takahashi, Kazumi Kubo
  • Publication number: 20200234997
    Abstract: A substrate processing method is implemented in a substrate processing apparatus including a processing chamber, a turntable on which a substrate is placed inside the processing chamber, and first and second gas supplies that supply first and second gases, respectively. The substrate processing method deposits a film, generated by a reaction between the first gas and the second gas, on the substrate in a first state where the substrate rotates and the turntable undergoes a clockwise orbital rotation around a rotating shaft so that the substrate passes through a region supplied with the first gas and thereafter passes through a region supplied with the second gas, and deposits the film on the substrate in a second state where the substrate rotates and the turntable undergoes a counterclockwise orbital rotation.
    Type: Application
    Filed: January 7, 2020
    Publication date: July 23, 2020
    Inventors: Hitoshi KATO, Yuji NISHINO